提出了一种通过双掺杂机制来调节氧化物半导体中有效质量的方法。我们证明了这一点在一个模型氧化物系统Sr $_{1-x}$ La $_x$ TiO $_{3-δ}$，在那里我们可以调整有效质量范围从6- 20 $\mathrm{m_e}$作为填充或载流子浓度和散射机制的函数，这取决于所选择的镧和氧空位浓度。使用Sr $_{1-x}$ La $_x$ TiO $_{3-δ}$的薄膜的测量的传输特性从玻尔兹曼传输方程计算有效质量值。我们的方法，这表明，有效质量随载流子浓度的降低，提供了一种手段，用于理解的性质的传输过程中的氧化物，通常具有大的有效质量和低的电子迁移率，相反的传统的高迁移率半导体。
英文摘要：
We present an approach to tune the effective mass in an oxide semiconductor by a double doping mechanism. We demonstrate this in a model oxide system Sr$_{1-x}$La$_x$TiO$_{3-δ}$, where we can tune the effective mass ranging from 6--20$\mathrm{m_e}$ as a function of filling or carrier concentration and the scattering mechanism, which are dependent on the chosen lanthanum and oxygen vacancy concentrations. The effective mass values were calculated from the Boltzmann transport equation using the measured transport properties of thin films of Sr$_{1-x}$La$_x$TiO$_{3-δ}$. Our method, which shows that the effective mass decreases with carrier concentration, provides a means for understanding the nature of transport processes in oxides, which typically have large effective mass and low electron mobility, contrary to the tradional high mobility semiconductors.
We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model…
We investigated how SrOx segregates on a Nb doped SrTiO3 (100) surface by in air annealing. Using atomic force and photoemission electron microscopes, we can directly visualize the morphology and the electronic phase changes with SrOx segregation. SrOx islands less than 2 micron meter in size and 1-5 unit cells thick nucleate first and grow in a labyrinth domain pattern. After prolonged annealing, SrOx forms a ~10 nm thick film. We show that the domain pattern can be controlled by introducing a surface miscut angle of SrTiO3. Additionally, the segregated SrOx has a lower work function, compare…
Two-dimensional (2D) Pb nanoisland has established an ideal platform for studying the quantum size effects on growth mechanism, electronic structures as well as high-temperature superconductivity. Here, we investigate the growth and quantum well electronic states of the 2D Pb nanoisland on Nb-doped SrTiO3(001) by scanning tunneling microscopy and spectroscopy. In contrast to Pb/Si(111), Pb/Cu(111) and Pb/Ag(111), there is no wetting layer of Pb formed on Nb-doped SrTiO3(001) surface, resulting in isolated Pb nanoislands with an apparent height of 4 atomic layers as the building blocks for the …
The cubic perovsike strontium titanate SrTiO$_3$ (STO) is one of the most studied, polarizable transition metal oxides. When excess charge is introduced to this material, e.g., through doping or atomic defects, STO tends to host polarons: Quasi-particles formed by excess charge carriers coupling with the crystal phonon field. Their presence alters the materials properties, and is a key for many applications. Considering that polarons form preferentially on or near surfaces, we study small polaron formation at the TiO$_2$ termination of the STO(001) surface via density functional theory calcula…
Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to …
Detailed Raman spectroscopy studies on polycrystalline Sr1-xPrxTiO3 (x=0.01, 0.025, 0.05, 0.075, 0.09, 0.13, 0.15, 0.17) samples are reported elucidating the microscopic mechanism of relaxor ferroelectrics. The polar mode was observed upto very high temperature ~1000 K suggesting that the dipoles exists at temperatures well above the characteristic relaxor temperatures and they develop a short range correlation at 505 K leading to formation of PNRs. The TO2 polar mode showed anomalous softening in cooling below T~505 K supporting the growth of PNRs. Fano resonance is reported in the Pr doped c…
We report on the temperature and electric field driven evolution of the magnetoresistance lineshape at an interface between Ni/AlO$_x$ and Nb-doped SrTiO$_3$. This is manifested as a superposition of the Lorentzian lineshape due to spin accumulation and a parabolic background related to tunneling anisotropic magnetoresistance (TAMR). The characteristic Lorentzian line shape of the spin voltage is retrieved only at low temperatures and large positive applied bias. This is caused by the reduction of electric field at large positive applied bias which results in a simultaneous reduction of the ba…
Unveiling the structural, chemical state, and optical band-gap evolution of Ta-doped epitaxial SrTiO3 thin films using first-principles calculations and spectroscopic ellipsometry
We synthesized strontium titanate SrTiO$_3$ (STO), Zr doped $\text{Sr}_\text{1-x}\text{Zr}_\text{x}\text{Ti}\text{O}_3$ and (Zr, Ni) co-doped $\text{Sr}_\text{1-x}\text{Zr}_\text{x}\text{Ti}_\text{1-y}\text{Ni}_\text{y}\text{O}_3$ samples using solid state reaction technique to report their structural, electrical and magnetic properties. The cubic $Pm$-$3m$ phase of the synthesized samples has been confirmed using Rietveld analysis of the powder X-ray diffraction pattern. The grain size of the synthesized materials was reduced significantly due to Zr doping as well as (Zr, Ni) co-doping in STO…
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated to the lattice mismatch (+5.4% for SrTiO3, -2.3% for MgO). Although we observed large differences in the lattice parameters, the lateral grain size (~85 nm for SrTiO3, ~20 nm for MgO), the surface morphology and the density of misfit dislocations, the mobility increased almost simultaneously with the thickness in both cases and saturated at ~100 cm2 V-1 s-1, together with the approaching to the nominal carrier conce…
Electronic and magnetic structure of epitaxial NiO/Fe$_3$O$_4$(001) heterostructures grown on MgO(001) and Nb-doped SrTiO$_3$(001)
我们研究了一些磁铁矿基薄膜的基本化学，电子和磁性。主要研究了MgO（001）和Nb-SrTiO $_3$（001）衬底上生长的NiO/Fe $_3$ O $_4$（001）双层薄膜。我们比较的结果与纯Fe $_3$ O $_4$（001）薄膜。结果发现，磁铁矿层被氧化，Fe $^{3+}$占主导地位的表面由于磁赤铁矿（$γ$ -Fe $_2$ O $_3$）的形成，这减少了磁铁矿层的厚度。从约20 nm的层厚度上的阳离子分布接近于化学计量的Fe $_3$ O $_4$。在NiO和Fe $_3$ O $_4$之间的界面处，我们发现Ni处于二价态，在Ni 2 p核心水平X射线光电子能谱中具有NiO典型的明确的光谱特征。通过XMCD可以排除明显的NiFe $_2$ O $_4$中间层的形成。磁光克尔效应测量揭示了显着更高的矫顽场相比，MgO（001）和45 $^{\circ}$旋转磁易轴上生长的磁铁矿薄膜。我们讨论了磁性层的自旋磁矩，发现磁矩随薄膜厚度的增加而增加。在较低的厚度下，在Nb-SrTiO $_3$上生长的NiO/Fe $_3$ O $_4$薄膜的自旋磁矩显著降低。20 nm或更高的厚度导致自旋磁矩接近块状磁铁矿的自旋磁矩。
A magnetic field parallel to an electrical current does not produce a Lorentz force on the charge carriers. Therefore, orbital longitudinal magnetoresistance is unexpected. Here we report on the observation of a large and non saturating magnetoresistance in lightly doped SrTiO$_{3-x}$ independent of the relative orientation of current and magnetic field. We show that this quasi-isotropic magnetoresistance can be explained if the carrier mobility along all orientations smoothly decreases with magnetic field. This anomalous regime is restricted to low concentrations when the dipolar correlation …
We report wide-doping-range ($8 \times 10^{17}$ to $4 \times 10^{20}$ cm$^{-3}$ Hall electron density) low temperature specific heat measurements on single crystal SrTiO$_3$:Nb, correlated with electronic transport data and tight-binding modeling. Lattice dynamic contributions to specific heat are shown to be well understood, albeit with unusual sensitivity to doping, likely related to the behavior of soft modes. Electronic contributions to specific heat provide effective masses that increase substantially, from $1.8$ to $4.8 m_e$, across the two SrTiO$_3$ Lifshitz transitions. It is shown tha…
The magnetic and electronic properties of strontium titanate with different carbon dopant configurations are explored using first-principles calculations with a generalized gradient approximation (GGA) and the GGA+U approach. Our results show that the structural stability, electronic properties and magnetic properties of C-doped SrTiO3 strongly depend on the distance between carbon dopants. In both GGA and GGA+U calculations, the doping structure is mostly stable with a nonmagnetic feature when the carbon dopants are nearest neighbors, which can be ascribed to the formation of a C-C dimer pair…
Memristors have attracted interest as neuromorphic computation elements because they show promise in enabling efficient hardware implementations of artificial neurons and synapses. We performed measurements on interface-type memristors to validate their use in neuromorphic hardware. Specifically, we utilised Nb-doped SrTiO$_3$ memristors as synapses in a simulated neural network by arranging them into differential synaptic pairs, with the weight of the connection given by the difference in normalised conductance values between the two paired memristors. This network learned to represent functi…
Doped SrTiO3 becomes a metal at extremely low doping concentrations n and is even superconducting with the superconducting transition temperature adopting a dome-like shape with the carrier concentration. It is shown here within the polarizability model that up to a well-defined carrier concentration transverse optic mode softening takes place together with polar nano-domain formation which evidences inhomogeneity and a two-component type behavior with metallicity coexisting with polarity. Beyond this region a conventional metal is formed where superconductivity as well as mode softening is ab…
