Magnetization switching due to a current-pulse in symmetric and asymmetric spin valves is studied theoretically within the macrospin model. The switching process and the corresponding switching parameters are shown to depend significantly on the pulse duration and also on the interplay of the torques due to spin transfer and external magnetic field. This interplay leads to peculiar features in the corresponding phase diagram. These features in standard spin valves, where the spin transfer torque stabilizes one of the magnetic configurations (either parallel or antiparallel) and destabilizes the opposite one, differ from those in nonstandard (asymmetric) spin valves, where both collinear configurations are stable for one current orientation and unstable for the opposite one. Following this we propose a scheme of ultrafast current-induced switching in nonstandard spin valves, based on a sequence of two current pulses.
An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between magnetizations, as predicted by spin-dependent diffusive transport model, and also confirmed experimentally. Making use of these predictions, we have numerically studied the magnetization dynamics in presence of such a wavy-torque in Co(8 nm)/Cu(10 nm)/Py(8 nm) nanopillar, considering geometry with extended and etched Co layer. In both cases we specify cond…
The current induced magnetization reversal in nanoscale spin valves is a potential alternative to magnetic field switching in magnetic memory devices. We show that the critical switching current can be decreased by an order of magnitude by strategically distributing the resistances in the magnetically active region of the spin valve. In addition, we simulate full switching curves and predict a new precessional state.
In all-perpendicular spin valve nanopillars the probability density of the free-layer magnetization is independent of the azimuthal angle and its evolution equation simplifies considerably compared to the general, nonaxisymmetric geometry. Expansion of the time-dependent probability density to Legendre polynomials enables analytical integration of the evolution equation and yields a compact expression for the practically relevant switching probability. This approach is valid when the free layer behaves as a single-domain magnetic particle and it can be readily applied to fitting experimental d…
Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field f…
We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate sig…
We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown mod…
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La$_{0.7}$Sr$_{0.3…
We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpo…
We explore theoretically the spin transport in nanostructures consisting of a gold quantum dot bridging nonmagnetic electrodes and two Mn12-Ph single molecule magnets (SMMs) that are thiol-bonded to the dot but are not in direct contact with the electrodes. We find that reversal of the magnetic moment of either SMM by the application of a magnetic field leads to a large change in the resistance of the dot, i.e., a strong spin valve effect. We show that this phenomenon arises from a novel physical principle: The spin-dependent molecular orbitals that extend over the dot and both SMMs change dra…
The magnetization detection and switching of an ultrasmall Stoner nanograin in a non-local spin valve (NLSV) device is studied theoretically. With the help of the rate equations, a unified description can be presented on the same footing for the NLSV signal that reads out the magnetization, and for the switching process. The setup can be viewed as that the grain is connected to two non-magnetic leads via sequential tunneling. In one lead, the chemical potentials for spin-up and -down electrons are split due to the spin injection in the NLSV. This splitting (or the spin bias) is crucial to the …
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd and Co/Ni multilayers that arises for sufficiently large DC currents. This periodic switching of the two layers produces an oscillating signal in the MHz regime but is only observed for one sign of th…
Spin selective nature of spin-filter tunnel junctions can be integrated with conventional metallic ferromagnets to regulate spin polarized quasiparticles in superconducting devices. We report fabrication of pseudo spin-valve device made with a bilayer of nitride spin-filter tunnel barrier (DyN or GdN) and a transition metal ferromagnet (Co and Gd). We show resistance switching in these devices corresponding to parallel and antiparallel configuration of their mutual magnetization direction. With optimal deposition process partial nitridation of the Co layer can be achieved. The magnetically dea…
We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur at high currents, again for both current polarities. These transitions are shown to be consistent with a macrospin model that considers a spin-polarized current that is tilted with respect to the free layer plane, due to the presence of spin-transfer torque from the polarizing layer. These unique switching characteristics, which have their origin in the nonc…
We report local and non-local measurements in pin-hole dominated mesoscopic multigraphene spin-valves. Local spin-valve measurements show spurious switching behavior in resistance during magnetic field sweeping similar to the signal observed due to spin-injection into multigraphene. The switching behavior has been explained in terms of local Hall effect due to thickness irregularity of the tunnel barrier. Local Hall effect appears due to large local magnetostatic field produced at the roughness in the AlO$_x$ tunnel barrier. The effect of this local Hall effect is found to reduce as temperatur…
We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets, and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including m…
Recently it has been predicted that a spin-polarized electrical current perpendicular-to-plane (CPP) directly flowing through a magnetic element can induce magnetization switching through spin-momentum transfer. In this letter, the first observation of current-induced magnetization switching (CIMS) in exchange-biased spin-valves (ESPVs) at room temperature is reported. The ESPVs show the CIMS behavior under a sweeping dc current with a very high critical current density. It is demonstrated that a thin Ruthenium (Ru) layer inserted between a free layer and a top electrode effectively reduces th…
We present a study of the pulsed current switching characteristics of spin-valve nanopillars with in-plane magnetized dilute permalloy and undiluted permalloy free layers in the ballistic regime at low temperature. The dilute permalloy free layer device switches much faster: the characteristic switching time for a permalloy free (Ni0.83Fe0.17) layer device is 1.18 ns, while that for a dilute permalloy ([Ni0.83Fe0.17]0.6Cu0.4) free layer device is 0.475 ns. A ballistic macrospin model can capture the data trends with a reduced spin torque asymmetry parameter, reduced spin polarization and incre…
We investigate the relation between thermal spin-transfer torque (TSTT) and the spin-dependent Seebeck effect (SDSE), which produces a spin current when a temperature gradient is applied across a metallic ferromagnet, in nanopillar metallic spin valves. Comparing its angular dependence (aSDSE) with the angle dependent magnetoresistance (aMR) measurements on the same device, we are able to verify that a small spin heat accumulation builds up in our devices. From the SDSE measurement and the observed current driven STT switching current of 0.8 mA in our spin valve devices, it was estimated that …
In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy, forms contacts to carbon nanotubes (CNTs) that meet the requirements for the injection and detection of spin-polarized currents in carbon-based spintronic devices. We establish the material quality and magnetization properties of Py strips in the shape of suitable electrical contacts and find a sharp magnetization switching tunable by geometry in the anisotropic magnetoresistance (AMR) of a single strip at cryogenic temperatures. In addition, we show that Py contacts couple strongly to CNTs, comparable to Pd contacts…
We report time-resolved measurements of current-induced reversal of a free magnetic layer in Py/Cu/Py elliptical nanopillars at temperatures T = 4.2 K to 160 K. Comparison of the data to Landau-Lifshitz-Gilbert macrospin simulations of the free layer switching yields numerical values for the spin torque and the Gilbert damping parameters as functions of T. The damping is strongly T-dependent, which we attribute to the antiferromagnetic pinning behavior of a thin permalloy oxide layer around the perimeter of the free layer. This adventitious antiferromagnetic pinning layer can have a major impa…
The effects of a weak microwave field in the magnetization dynamics driven by spin-transfer-torque in spin-valves with perpendicular materials have been systematically studied by means of full micromagnetic simulations. In the system we studied, depending on the working point (bias field and current) in the dynamical stability diagram, we observe either resonant switching and injection locking. The resonant switching, observed in the switching region, occurs when the field frequency is approaching the frequency of the main pre-switching mode giving rise to an asymmetric power distribution of t…
In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves para…
The dynamics of the magnetic order parameters of ferromagnet/normal-metal/ferromagnet spin valves and isolated ferromagnets may be very different. We investigate the role of the nonequilibrium spin-current exchange between the ferromagnets in the magnetization precession and switching. We find a (low-temperature) critical current bias for a coherent current-induced magnetization excitation in spin valves, which unifies and generalizes previous ideas of Slonczewski and Berger. In the absence of an applied bias, the effect of the spin transfer can be expressed as magnetic--configuration-dependen…
We measured the anomalous-Nernst effect and anisotropic magnetoresistive heating in a lateral multiterminal Permalloy/Copper spin valve using all-electrical lock-in measurements. To interpret the results, a three-dimensional thermoelectric finite-element-model is developed. Using this model, we extract the heat profile which we use to determine the anomalous Nernst coefficient of Permalloy Rn=0.13 and also determine the maximum angle of theta=8 degrees of the magnetization prior to the switching process when an opposing non-collinear 10$^{\circ}$ magnetic field is applied.
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than the corresponding DC one. The effect is understood as a consequence of the underdamped nature of the spin-torque oscillators. It allows to use the kinetic inertia to overcome the residual energy barrier, rather than suppressing the latter by a large spin current. The effect is similar to a swing which may be set into high amplitude motion by a weak near-resona…
We study electronic transport through a ferromagnet normal-metal ferromagnet system and we investigate the effect of hyperfine interaction between electrons and nuclei in the normal-metal part. A switching of the magnetization directions of the ferromagnets causes nuclear spins to precess. We show that the effect of this precession on the current through the system is large enough to be observed in experiment.
We report an observation of spin-valve like hysteresis within a few atomic layers at a ferromagnetic interface. We use phonon spectroscopy of nanometer sized point contacts as an in-situ probe to study the mechanism of the effect. Distinct in energy phonon peaks for contacts with dissimilar nonmagnetic outer electrodes allow to localize the observed spin switching to the top or bottom interfaces for nanometer thin ferromagnetic layers. The mechanism consistent with our data is energetically distinct atomically thin surface spin layers that can form current or field driven surface spin-valves w…
We consider current-induced spin-transfer torque on an antiferromagnet in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a current-induced spin-transfer torque. This effect occurs for current densities ranging below 10$^6$ A/cm$^2$. The direction of the induced magnetization in the AFM is shown to be efficiently controlled by means of the magnetic configuration of the spin-valve setup, with the anti-parallell configuration yielding the largest spin-transfer torque. Interestingl…
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral electric-field driven strain-mediated modulation of magnetic properties in Co$/$Cu$/$Py pseudo spin valve grown on ferroelectric PMN-PT substrate. We show a decrease of the giant magnetoresistance ratio of the pseudo spin valve with increasing electric field, which is attributed to the deviation of the Co layer magnetization from the initial direction due to strai…
We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry allows us to experimentally distinguish different magneto resistance signals, being 1) the spin valve effect, 2) the anomalous magneto resistance (AMR) effect and 3) Hall effects. We find that the AMR contribution of the Py contacts can be much bigger than the amplitude of the spin valve effect, making it impossible to observe the spin valve effect in a 'conven…
We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) s…
Large heat currents are obtained in Co/Cu/Co spin valves positioned at the middle of Cu nanowires. The second harmonic voltage response to an applied current is used to investigate the effect of the heat current on the switching of the spin valves. Both the switching field and the magnitude of the voltage response are found to be dependent on the heat current. These effects are evidence for a thermal spin transfer torque acting on the magnetization and are accounted for by a thermodynamic model in which heat, charge and spin currents are linked by Onsager reciprocity relations.
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via the lateral stray fields of the two magnetic layers. Starting from the parallel state the Oersted field rotates the magnetization vectors of both magnetic layers in opposite directions so far off the wire axis that the dipolar coupling becomes strong enough to stabilize an antiparallel configuration. As simulations and experiments show this coupling is only…
We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. At $T=4$ K we demonstrate: high speed deterministic switching at short pulse lengths - down to 100 ps - with sufficient measurement statistics to establish a switching error rate of $10^{-5}$; coherent precessional switching at longer times; and ensemble decoherence effects at even longer times. Finite temperature macrospin models capture th…
Active manipulation of spin waves is essential for the development of magnon-based technologies. Here, we demonstrate programmable spin-wave filtering by resetting the spin structure of a pinned 90$^\circ$ Néel domain wall in a continuous CoFeB film with abrupt rotations of uniaxial magnetic anisotropy. Using phase-resolved micro-focused Brillouin light scattering and micromagnetic simulations, we show that broad 90$^\circ$ head-to-head or tail-to-tail magnetic domain walls are transparent to spin waves over a broad frequency range. In contrast, magnetic switching to a 90$^\circ$ head-to-tail …
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnet…
We investigate transport through a single-level quantum dot coupled to noncollinearly magnetized ferromagnets in the presence of localized spins in either the tunnel barrier or on the quantum dot. For a spin embedded in the tunnel barrier, we find an interplay between current-induced switching of the spin, spin-dependent tunneling through the barrier and spin accumulation on the dot resulting in characteristic signals in the current. We, furthermore, find huge Fano factors due to random telegraph noise. For noncollinear geometries, an exchange field that depends on the impurity spin state lead…
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7 A/cm^2 at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with qualitatively different dependences on current intensity. The current appears to have the effect of a field determined as the bias field required to equalize these times. The bias field changes sign when the…
We report the electrical injection and detection of spin polarized current in lateral ferromagnet-nonmagnet-ferromagnet spin valve devices, ferromagnet being cobalt and nonmagnet being indium (In) or indium oxide (In2O3) nanostructures. The In nanostructures were grown by depositing pure In on lithographically pre-patterned structures. In2O3 nanostructures were obtained by oxidation of In nanostructures. Spin valve devices were fabricated by depositing micro magnets over the nanostructures with connecting nonmagnetic electrodes via two steps of e-beam lithography. Clear spin switching behavior…
We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by a modest level of externally generated current (voltage) noise. This also leads to a significantly lower power consumption for the switching process.
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the eff…
We present a new switching mechanism that utilizes the proximity coupling between the surface spin texture of a Weyl semimetal and a superconductor, in a Weyl semimetal/superconductor/Weyl semimetal trilayer heterostructure. We show that the superconductivity in the middle layer can be fully suppressed by the surface spin texture of the Weyl semimetals in the presence of an external magnetic field, but it can be recovered again by only changing the field direction. The restoration of the middle-layer superconductivity indicates a sharp transition to a low-resistance state. This sharp switching…
We have studied the proximity-induced superconducting triplet pairing in CoO$_x$/Py1/Cu/Py2/Cu/Pb spin-valve structure (where Py = Ni$_{0.81}$Fe$_{0.19}$). By optimizing the parameters of this structure we found a triplet channel assisted full switching between the normal and superconducting states. To observe an "isolated" triplet spin-valve effect we exploited the oscillatory feature of the magnitude of the ordinary spin-valve effect $ΔT_c$ in the dependence of the Py2-layer thickness $d_{Py2}$. We determined the value of $d_{Py2}$ at which $ΔT_c$ caused by the ordinary spin-valve effect (th…
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature ($T_\mathrm{C}$). An MR curve with an open minor loop is clearly observed at 3.7 K in a sample with $t_\mathrm{InAs}$ = 3 nm, which originates from the parallel - antiparallel magnetization switching of the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAs interfaces. The MR ratio increases (from 0.03 to 1.6%) with…
Formation of a magnetic hysteresis loop with respect to a bias voltage is investigated theoretically in a spin-valve device based on a single magnetic molecule. We consider a device consisting of two ferromagnetic electrodes bridged by a carbon nanotube, acting as a quantum dot, to which a spin-anisotropic molecule is exchange coupled. Such a coupling allows for transfer of angular momentum between the molecule and a spin current flowing through the dot, and thus, for switching orientation of the molecular spin. We demonstrate that this current-induced switching process exhibits a hysteretic b…
Spin-polarized transport through bistable magnetic adatoms or single-molecule magnets (SMMs), which exhibit both uniaxial and transverse magnetic anisotropy, is considered theoretically. The main focus is on the impact of transverse anisotropy on transport characteristics and the adatom's/SMM's spin. In particular, we analyze the role of quantum tunneling of magnetization (QTM) in the mechanism of the current-induced spin switching, and show that the QTM phenomenon becomes revealed as resonant peaks in the average values of the molecule's spin and in the charge current. These features appear a…
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upon applica-tion of transverse magnetic field pulses. Stopping the field pulse after a 180 degree precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultra fast limit of field induced magnetization reversal.
We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutr…
The spin valve effect for the superconducting current based on the superconductor/ferromagnet proximity effect has been studied for a CoO_x/Fe1/Cu/Fe2/Cu/Pb multilayer. The magnitude of the effect $ΔT_c$ = T_c^{AP} - T_c^{P}, where T_c^{P} and T_c^{AP} are the superconducting transition temperatures for the parallel (P) and antiparallel (AP) orientation of magnetizations, respectively, has been measured for different thicknesses of the Fe1 layer d_{Fe1}. The obtained dependence of the effect on d_{Fe1} reveals that $ΔT_c$ can be increased in comparison with the case of a half-infinite Fe1 laye…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetizatio…
The switching of magnetic layers is studied under the action of a spin current in a ferromagnetic metal/non-magnetic metal/ferromagnetic metal spin valve. We find that the main contribution to the switching comes from the non-equilibrium exchange interaction between the ferromagnetic layers. This interaction defines the magnetic configuration of the layers with minimum energy and establishes the threshold for a critical switching current. Depending on the direction of the critical current, the interaction changes sign and a given magnetic configuration becomes unstable. To model the time depen…
We fabricated Co nano-rings incorporated in the vertical pseudo-spin-valve nanopillar structures with deep submicron lateral sizes. It is shown that the current-perpendicular-to-plane giant magnetoresistance can be used to characterize a very small magnetic nano-ring effectively. Both the onion state and the flux-closure vortex state are observed. The Co nano-rings can be switched between the onion states as well as between onion and vortex states not only by the external field but also by the perpendicularly injected dc current.
We demonstrate sharp thermally-induced switching between ferromagnetic and antiferromagnetic RKKY exchange in a spin-valve with the spacer incorporating a thin diluted ferromagnetic layer as the core. We illustrate the mechanism behind the effect as due to a change in the effective thickness of the spacer induced by the Curie transition into its paramagnetic state.
We study the critical temperature T_c of SFF trilayers (S is a singlet superconductor, F is a ferromagnetic metal), where the long-range triplet superconducting component is generated at noncollinear magnetizations of the F layers. We demonstrate that T_c can be a nonmonotonic function of the angle αbetween the magnetizations of the two F layers. The minimum is achieved at an intermediate α, lying between the parallel (P, α=0) and antiparallel (AP, α=π) cases. This implies a possibility of a "triplet" spin-valve effect: at temperatures above the minimum T_c^{Tr} but below T_c^{P} and T_c^{AP},…
We investigate the angular dependence of the spin torque generated when applying a temperature difference across a spin-valve. Our study shows the presence of a non-trivial fixed point in this angular dependence, i.e. the possibility for a temperature gradient to stabilize radio frequency oscillations without the need for an external magnetic field. This so called "wavy" behavior can already be found upon applying a voltage difference across a spin-valve but we find that this effect is much more pronounced with a temperature difference. Our semi-classical theory is parametrized with experiment…
