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arXiv 0809.2297cond-mat.supr-con
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氧掺杂对MgB2薄膜正常和超导性能的影响

Effect of oxygen incorporation on normal and superconducting properties of MgB2 films

R. K. Singh, Y. Shen, R. Gandikota, C. Carvalho, J. M. Rowell, N. Newman

摘要:

氧系统地纳入分子束外延生长的MgB 2薄膜使用原位生长后退火在氧气环境中。结合临界温度和电阻率的测量的连接性分析表明,氧分布在晶粒内和晶粒之间。观察到高值的临界电流密度(在8 T和4.2 K下约为4 × 10^5 A/cm^2)、外推临界场(>45 T)和临界场随温度的斜率(1.4 T/K)。我们的研究结果表明,较低的生长温度(300 ℃)和氧掺杂(>0.65%)可以产生具有高的Jc值在现场和Hc 2高场磁体应用的MgB 2。

英文摘要:

Oxygen was systematically incorporated in MBE grown MgB2 films using in-situ post-growth anneals in an oxygen environment. Connectivity analysis in combination with measurements of the critical temperature and resistivity indicate that oxygen is distributed both within and between the grains. High values of critical current densities in field (~4x10^5 A/cm^2 at 8 T and 4.2 K), extrabolated critical fields (>45 T) and slopes of critical field versus temperature (1.4 T/K) are observed. Our results suggest that low growth temperatures (300oC) and oxygen doping (>0.65%) can produce MgB2 with high Jc values in field and Hc2 for high-field magnet applications.

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