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arXiv 0709.4007cond-mat.supr-con
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化学计量对MgB2薄膜中氧掺入的影响

Effect of stoichiometry on oxygen incorporation in MgB2 thin films

R K Singh, Y Shen, R Gandikota, J M Rowell, N Newman

摘要:

发现在暴露于大气气体时并入到MgB 2薄膜中的氧的量强烈地取决于材料的化学计量。卢瑟福背散射光谱用于监测由于暴露于以下环境而导致的氧掺入的变化:(a)环境大气,(b)潮湿大气,(c)在空气中退火和(d)在氧气中退火。该研究调查了薄膜样品的组成,系统地从Mg0.9B2到Mg1.1B2变化。一个显着的表面氧污染,观察到在所有这些薄膜。另一方面,在大部分膜中的氧含量仅在富镁膜和暴露于潮湿气氛的膜中显著增加。

英文摘要:

The amount of oxygen incorporated into MgB2 thin films upon exposure to atmospheric gasses is found to depend strongly on the material's stoichiometry. Rutherford backscattering spectroscopy was used to monitor changes in oxygen incorporation resulting from exposure to: (a) ambient atmosphere, (b) humid atmospheres, (c) anneals in air and (d) anneals in oxygen. The study investigated thin-film samples with compositions that were systematically varied from Mg0.9B2 to Mg1.1B2. A significant surface oxygen contamination was observed in all of these films. The oxygen content in the bulk of the film, on the other hand, increased significantly only in Mg rich films and in films exposed to humid atmospheres.

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