We analyze the electronic transport through a quantum dot that contains a magnetic impurity. The coherent transport of electrons is governed by the quantum confinement inside the dot, but is also influenced by the exchange interaction with the impurity. The interplay between the two gives raise to the singlet-triplet splitting of the energy levels available for the tunneling electron. In this paper, we focus on the charge fluctuations and, more precisely, the height of the conductance peaks. We show that the conductance peaks corresponding to the triplet levels are three times higher than those corresponding to singlet levels, if electronic correlations are neglected (for non-interacting dots, when an exact solution can be obtained). Next, we consider the Coulomb repulsion and the many-body correlations. In this case, the singlet/triplet peak height ratio has a complex behavior. Usually the highest peak corresponds to the state that is lowest in energy (ground state), regardless if it is singlet or triplet. In the end, we get an insight on the Kondo regime for such a system, and show the formation of three Kondo peaks. We use the equation of motion method with appropriate decoupling.
We present a theory for the electronic and magneto-optical properties of spherical quantum dots consisting of an inner core surrounded by an outer shell. This core-shell quantum dot is doped by magnetic Mn impurities all of which are implanted at a preselected radius on a spherical surface within the dot. The spherical symmetry of the dot is broken by the application of an external magnetic field. The electronic states in the presence of a magnetic field are treated in an effective mass model which includes the s-d and p-d exchange interaction with localized Mn d electrons. The strain in the q…
We used resonant laser spectroscopy of multiple confocal InGaAs quantum dots to spatially locate charge fluctuators in the surrounding semiconductor matrix. By mapping out the resonance condition between a narrow-band laser and the neutral exciton transitions of individual dots in a field effect device, we identified spectral discontinuities as arising from charging and discharging events that take place within the volume adjacent to the quantum dots. Our analysis suggests that residual carbon dopants are a major source of charge-fluctuating traps in quantum dot heterostructures.
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devi…
Doping a semiconductor quantum dot with just a single impurity atom can completely transform its physical properties. Here, we report and analyze the magnetic circular dichroism (MCD) spectra of colloidal CdSe quantum dot samples containing on average fewer than one Mn2+ per quantum dot. Even at this sub-single-dopant level, the low-temperature low-field data are dominated by impurity-induced Zeeman splittings caused by dopant-carrier sp-d exchange. Unlike in more heavily doped quantum dots, however, the MCD intensity at the first CdSe exciton shows a field-induced sign flip as the field stren…
A spherical quantum dot (QD) heterosystem CdS/SiO$_2$ has been studied. Each QD has a hydrogen-like impurity in its center. Besides that, it has been accounted that a polarization trap for electron exists at the interfaces due to the difference between the QD and matrix dielectric permittivity. It has been defined that for small QD radii there are surface electron states. For different radii, partial contributions of the surface states into the electron energy caused by the electron-ion and electron-polarization charges interaction have been defined. The linear light absorption coefficient of …
In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5\,nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high quality GaAs/AlGaAs heterostructures. Several materials were grown this way with different densities of Si atoms. At low temperature the mobility decreases monotonically with increasing impurity density. In materials with incorporated impurities, effects are observed with increasing temperatures. On the one hand, a minimum in mobility appears, marking a trans…
Transport and gain properties of a resonant-phonon terahertz quantum cascade laser are calculated using nonequilibrium Green's functions. Impurity scattering is shown to be responsible for contrasting nonlinear effects in the transport and the gain properties. For typical doping concentrations, the current density is found to be weakly sensitive to the impurity scattering strength. In contrast, the calculated gain is found to be very sensitive to the impurity scattering strength. This difference is attributed to the strong momentum dependence of the long-range coupling to charged impurities. S…
We study the transport properties of two dimensional electron systems with strong Rashba spin-orbit coupling (SOC) doped with interacting magnetic impurities. Interactions between magnetic impurities cause the formation of magnetic clusters with temperature dependent mean sizes (CMSs) distributed randomly on the surface of the system. Treating magnetic clusters as scattering centers, by employing a generalized relaxation time approximation we obtain the non-equilibrium distribution functions of Rashba electrons in both regimes of above and below the band-crossing point (BCP) and present the ex…
We theoretically study the atomic structure and energetics of silicon and silicon-nitrogen impurities in graphene. Using density-functional theory, we get insight into the atomic structures of the impurities, evaluate their formation energies and assess their abundance in realistic samples. We find that nitrogen, as well as oxygen and hydrogen, are trapped at silicon impurities, considerably altering the electronic properties of the system. Furthermore, we show that nitrogen doping can induce local magnetic moments resulting in spin-dependent transport properties, even though neither silicon n…
Graphene quantum dots are considered as promising alternatives to quantum dots in III-V semiconductors, e.g., for the use as spin qubits due to their consistency made of light atoms including spin-free nuclei which both imply relatively long spin decoherene times. However, this potential has not been realized in experiments so far, most likely, due to a missing control of the edge configurations of the quantum dots. Thus, a more fundamental investigation of Graphene quantum dots appears to be necessary including a full control of the wave function properties most favorably during transport spe…
We study the sub-gap spectrum and the transport properties of a double quantum dot coupled to metallic and superconducting leads. The coupling of both quantum dots to the superconducting lead induces a non-local pairing in both quantum dots by the Andreev reflection processes. Additionally, we obtain two channels of Cooper pair tunneling into a superconducting lead. In such a system, the direct tunneling process (by one of two dots) or the crossed tunneling process (by both quantum dots at the same time) is possible. We consider the dependence of the Andreev transmittance on an inter-dot tunne…
