We calculate current, spin current and tunnel magnetoresistance (TMR) for a quantum dot coupled to ferromagnetic leads in the presence of a square wave of bias voltage. Our results are obtained via time-dependent nonequilibrium Green function. Both parallel and antiparallel lead magnetization alignments are considered. The main findings include a wave of spin accumulation and spin current that can change sign as the time evolves, spikes in the TMR signal and a TMR sign change due to an ultrafast switch from forward to reverse current in the emitter lead.
We demonstrate that voltage-controlled negative index can be obtained in self-organized InAs quantum dot systems. As the bias voltage changes, the refractive index can be adjusted and controlled continuously from -7 to 7. Simultaneously, the absorption of light in the system will be very small. The single-negative index materials and the double-negative index materials can be achieved in different bias voltages.
The voltage-controlled Berry phases in two vertically coupled InGaAs/GaAs quantum dots are investigated theoretically. It is found that Berry phases can be changed dramatically from 0 to 2$π$ (or 2$π$ to 0) only simply by turning the external voltage. Under realistic conditions, as the tunneling is varied from $0.8eV$ to $0.9eV$ via a bias voltage, the Berry phases are altered obviously, which can be detected in an interference experiment. The scheme is expected to be useful in constructing quantum computation based on geometric phases in an asymmetrical double quantum dot controlled by voltag…
We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence exper…
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the a…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hopping between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange fiel…
We theoretically examine generation of spin-polarized current using multi-terminated quantum dot with spin-orbit interaction. First, a two-level quantum dot is analyzed as a minimal model, which is connected to $N$ ($\ge 2$) external leads via tunnel barriers. When an unpolarized current is injected to the quantum dot from a lead, a polarized current is ejected to others, similarly to the spin Hall effect. In the absence of magnetic field, the generation of spin-polarized current requires $N \ge 3$. The polarization is markedly enhanced by resonant tunneling when the level spacing in the quant…
In this paper we show that it is possible to switch the spin polarization of the photocurrent signal obtained from a single self-assembled quantum dot photodiode under the effect of elliptically polarized light by just increasing the light intensity. In the nonlinear mechanism treated here, intense elliptically polarized light creates an effective exchange interaction between the exciton spin states through the biexciton state. This effect can be used as a dynamical switch to invert the spin-polarization of the extracted photocurrent. We further show that the effect persists in realistic ensem…
Circularly polarized optical excitation is used to demonstrate the efficient injection of spin-polarized excitons to individual self-assembled CdSe quantum dots in ZnSe barrier. The exciton spin-transfer is studied by means of polarization-resolved single dot spectroscopy performed in magnetic field applied in Faraday configuration. Detailed analysis of the neutral exciton photoluminescence spectra reveals the presence of exciton spin relaxation during its lifetime in a quantum dot. This process is seen for both nonmagnetic dots and those containing single Mn$^{2+}$ ions. Taking this into acco…
We analyze transport through both a double quantum dot and a triple quantum dot with inhomogeneous Zeeman splittings in the presence of crossed dc and ac magnetic fields. We find that strongly spin-polarized current can be achieved by tuning the relative energies of the Zeeman-split levels of the dots, by means of electric gate voltages: depending on the energy level detuning, the double quantum dot works either as spin-up or spin-down filter. We show that a triple quantum dot in series under crossed dc and ac magnetic fields can act not only as spin-filter but also as spin-inverter.
We present a comprehensive theoretical investigation on the dynamic electronic response of a noninteracting quantum dot system to various forms of time-dependent voltage applied to the single contact lead. Numerical simulations are carried out by implementing a recently developed hierarchical equations of motion formalism [J. Chem. Phys. 128, 234703 (2008)], which is formally exact for a fermionic system interacting with grand canonical fermionic reservoirs, in the presence of arbitrary time-dependent applied chemical potentials. The dynamical characteristics of the transient transport current…
We investigate spin-polarized transport phenomena through double quantum dots coupled to ferromagnetic leads in series. By means of the slave-boson mean-field approximation, we calculate the conductance in the Kondo regime for two different configurations of the leads: spin-polarization of two ferromagnetic leads is parallel or anti-parallel. It is found that transport shows some remarkable properties depending on the tunneling strength between two dots. These properties are explained in terms of the Kondo resonances in the local density of states.
We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with $\sim 2$ $μ$eV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange interaction can be turned off by choosing a gate voltage where the dot is occupied with an additional electron. Saturation spectroscopy demonstrates that the neutral exciton behaves as a two-level system. Our exp…
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
We investigate the interplay between long-range and direct photon-assisted transport in a triple quantum dot chain where local ac voltages are applied to the outer dots. We propose the phase difference between the two ac voltages as an external parameter, which can be easily tuned to manipulate the current characteristics. For gate voltages in phase opposition we find quantum destructive interferences analogous to the interferences in closed-loop undriven triple dots. As the voltages oscillate in phase, interferences between multiple paths give rise to dark states. Those totally cancel the cur…
The shot noise in the current through a quantum dot is calculated as a function of voltage from the high-voltage, Coulomb blockaded regime to the low-voltage, Kondo regime. Using several complementary approaches, it is shown that the zero-frequency shot noise (scaled by the voltage) exhibits a non-monotonic dependence on voltage, with a peak around the Kondo temperature. Beyond giving a good estimate of the Kondo temperature, it is shown that the shot noise yields additional information on the effects of electronic correlations on the local density of states in the Kondo regime, unaccessible i…
Considering a double-barrier structure formed by a silicon quantum dot covered by natural oxide with two metallic terminals, we derive simple conditions for a step-like voltage-current curve. Due to standard chemical properties, doping phosphorus atoms located in a certain domain of the dot form geometrically parallel current channels. The height of the current step typically equals to (1.2 pA)N, where N=0,1,2,3... is the number of doping atoms inside the domain, and only negligibly depends on the actual position of the dopants. The found conditions are feasible in experimentally available str…
Spin-polarized transport through a double quantum dot system attached to a common superconducting lead and two ferromagnetic electrodes (fork geometry) is investigated theoretically. The key objective of the analysis is to describe the influence of electrodes' ferromagnetism on the Andreev tunneling. Both direct and crossed Andreev tunneling processes are considered, in general. The other objective is a detailed analysis of the role of Coulomb interaction and its impact on the Andreev tunneling processes.
We in this paper study theoretically the spin-polarized quantum transport through a T-shape quantum dot-array by means of transfer-matrix method along with the Green^{,}s function technique. Multi-magnetic fields are used to produce the spin-polarized transmission probabilities and therefore the spin currents, which are shown to be tunable in a wide range by adjusting the energy, and the direction-angle of magnetic fields as well. Particularly the opposite- spin- polarization currents separately flowing out to two electrodes can be generated and thus the system acts as a spin splitter.
The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole exchange interaction depends on the exciton charge and demonstrate how the interaction can be switched on and off with a small dc voltage. Furthermore, we report polarization sensitive analysis of the excitonic interband transition in a single quantum dot as a function of charge with and without magnetic field.
We investigate parametric pumping of a spin-polarized current through a nearly-closed quantum dot in a perpendicular magnetic field. Pumping is achieved by tuning the tunnel couplings to the left and right lead - thereby operating the quantum dot as a turnstile - and changing either the magnetic field or a gate-voltage. We analyze the quantum dynamics of a pumping cycle and the limiting time scales for operating the quantum dot turnstile as a pure spin pump. The proposed device can be used as a fully controllable double-sided and bipolar spin filter and to inject spins "on demand".
We proposed and demonstrated that the nuclear spins of the host lattice in GaAs double quantum dots can be strongly polarized in either of two opposite directions, parallel or antiparallel to an external magnetic field. The direction is selected simply by adjusting the dc source-drain voltage of the device. This nuclear polarization manifests itself by repeated controlled electron-nuclear spin scattering in the Pauli spin blockade state. Polarized nuclei are also controlled coherently by means of nuclear magnetic resonance (NMR). This work confirmed that the nuclear spins in quantum dots are i…
We consider theoretically a magnetic impurity spin driven by polarized electrons tunneling through a double quantum dot system. Spin blockade effect and spin conservation in the system make the magnetic impurity sufficiently interact with each transferring electron. As a results, a single collected electron carries information about spin change of the magnetic impurity. The scheme may develop all electrical manipulation of magnetic atoms by means of single electrons, which is significant for the implementation of scalable logical gates in information processing systems.
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases with bias, but drops faster and even inverts with voltage when electrons tunnel into it. A bias-dependent free electron model shows that in the former case electrons originate near the Fermi level of the FM with large polarization whereas in the latter, electrons tunnel into hot electron states for which the polarization is significantly reduced. The change…
Using density functional theory, we investigate fluctuations of the ground state energy of spin-polarized, disordered quantum dots in the metallic regime. To compare to experiment, we evaluate the distribution of addition energies and find a convolution of the Wigner-Dyson distribution, expected for noniteracting electrons, with a narrower Gaussian distribution due to interactions. The tird moment of the total distribution is independent of interactions, and so is predicted to decrease by a factor of 0.405 upon application of a magnetic field which transforms from the Gaussian orthogonal to th…
Spin-dependent electronic transport through a quantum dot side-coupled to two quantum dots and attached to ferromagnetic leads with collinear (parallel and antiparallel) magnetizations is analyzed theoretically. The intra-dot Coulomb correlations are taken into account, whereas the inter-dot ones are neglected. Transport characteristics, i.e. conductance and tunnel magnetoresistance associated with the magnetization rotation from parallel to antiparallel configurations, are calculated by the noneqiulibrium Green function technique. The Green functions are derived by the equation of motion meth…
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum states of magnetic polarons. The strong anisotropy of magnetic polaron states in disk-like quantum dots with holes comes from the spin splitting in the valence band. The binding energy and spontaneous magnetization of quantum dots oscillate with the number of particles and reflect the shell structure. Due to the Coulomb interaction, the maximum binding ener…
We show theoretically that a strongly spin-polarized current can be generated in semiconductors by taking advantage of the ferromagnetic phase of a quantum dot array (QDA). A Hubbard model with coupling to leads is used to study the tunneling current of the QDA system as a function of gate voltage. Due to the weak interdot coupling and strong Coulomb repulsion, it is found that a ferromagnetic phase exists in QDA within a window of gate voltage. Therefore QDA can be used as a spin filter to detect and control spin states in quantum information devices.
On a basis of extensive analytical and numerical studies we show that a linear-polarized microwave field creates a stationary magnetization in mesoscopic ballistic quantum dots with two-dimensional electron gas being at a thermal equilibrium. The magnetization is proportional to a number of electrons in a dot and to a microwave power. Microwave fields of moderate strength create in a one dot of few micron size a magnetization which is by few orders of magnitude larger than a magnetization produced by persistent currents. The effect is weakly dependent on temperature and can be observed with ex…
We study spin-polarized transient transport in a quantum dot coupled to two ferromagnetic leads subjected to a rectangular bias voltage pulse. Time-dependent spin-resolved currents, occupations, spin accumulation, and tunneling magnetoresistance (TMR) are calculated using both nonequilibrium Green function and master equation techniques. Both parallel and antiparallel leads' magnetization alignments are analyzed. Our main findings are: a dynamical spin accumulation that changes sign in time, a short-lived pulse of spin polarized current in the emitter lead (but not in the collector lead), and …
Transmission and reflection of an electromagnetic pulse through a dielectric slab doped with the quantum dot molecules is investigated. It is shown that the transmitted and reflected pulses depend on the inter-dot tunneling effect and can be controlled by applying a gate voltage.
We present a theory of zero-bias anomalies and dephasing rates for a Coulomb-blockaded quantum dot, driven out of equilibrium by coupling to voltage biased source and drain leads. We interpret our results in terms of the statistics of voltage fluctuations in the system.
We investigate the quench dynamics of a quantum dot strongly coupled to spin-polarized ferromagnetic leads. The real-time evolution is calculated by means of the time-dependent density-matrix numerical renormalization group method implemented within the matrix product states framework. We examine the system's response to a quench in the spin-dependent coupling strength to ferromagnetic leads as well as in the position of the dot's orbital level. The spin dynamics is analyzed by calculating the time-dependent expectation values of the quantum dot's magnetization and occupation. Based on these, …
A key element in the emergence of a full spintronics technology is the development of voltage controlled spin filters to selectively inject carriers of desired spin into semiconductors. We previously demonstrated a prototype of such a device using a II-VI dilute-magnetic semiconductor quantum well which, however, still required an external magnetic field to generate the level splitting. Recent theory suggests that spin selection may be achievable in II-VI paramagnetic semiconductors without external magnetic field through local carrier mediated ferromagnetic interactions. We present the first …
We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal/dot/metal junction where the dot level energy is abruptly changed by a step-shaped voltage pulse. Analytical linear responses are obtained for the time-dependent thermoelectric coefficients. We show that the Seebeck coefficient can be enhanced in the transient regime up to an amount (here rising 40%) controlled by both the dot energy and the height of the voltage step.
We consider an interacting quantum dot connected to two reservoirs driven at distinct voltage/temperature and we study the correlations between charge and heat currents first as a function of the applied voltage bias, and second as a function of the temperature gradient between the two reservoirs. The Coulomb interactions in the quantum dot are treated using the Hartree approximation and the dot occupation number is determined self-consistently. The correlators exhibit structures in their voltage dependency which are highly non-linear when the coupling between the dot and the reservoirs is wea…
We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime, and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions as well as higher-spin ground states, and allows g-factors to be measured down to a single electron. The spin of emitted current in the Coulomb blockade regime, measured using spin-sensitive electron focusing, is found to be polarized along the direction of the applied magnetic field regard…
The paper proposes the method to analyze the internal dynamics of nanoscopic systems by periodic modulation of the electrochemical potentials of the attached leads and measuring the time-averaged current. The idea is presented using the example of the a double quantum dot coupled to one nonmagnetic and one spin-polarized lead. The current flowing through the molecule is shown to depend on both the frequency of the modulation and the exchange coupling between the electrons occupying the molecule. In particular, one can observe a pronounced oscillatory behavior of the current-frequency dependenc…
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel co…
Spin polarized transport through a quantum dot coupled to ferromagnetic electrodes with noncollinear magnetizations is discussed in terms of nonequilibrium Green functions formalism in the finite-U slave boson mean field approximation. The difference of orientations of the magnetizations of electrodes opens off-diagonal spin-orbital transmission and apart from spin currents of longitudinal polarization also spin-flip currents appear. We also study equilibrium pure spin current at zero bias and discuss its dependence on magnetization orientation, spin-orbit coupling strength and gate voltage. I…
We study the interplay of the Kondo effect and spin-polarized tunneling in a class of systems exhibiting uniaxial magnetic anisotropy, such as magnetic molecules, magnetic adatoms, or quantum dots coupled to a single localized magnetic moment. Using the numerical renormalization group method we calculate the spectral functions and linear conductance in the Kondo regime. We show that the exchange coupling between conducting electrons and localized magnetic core generally leads to suppression of the Kondo effect. We also predict a nontrivial dependence of the tunnel magnetoresistance on the stre…
Using non-equilibrium Green functions we calculate the spin-polarized current and shot noise in a ferromagnet--quantum-dot--ferromagnet (FM-QD-FM) system. Both parallel (P) and antiparallel (AP) magnetic configurations are considered. Coulomb interaction and coherent spin-flip (similar to a transverse magnetic field) are taken into account within the dot. We find that the interplay between Coulomb interaction and spin accumulation in the dot can result in a bias-dependent current polarization $\wp$. In particular, $\wp$ can be suppressed in the P alignment and enhanced in the AP case depending…
We study three-terminal linear and nonlinear transport through an Aharonov-Bohm interferometer containing a double quantum dot using the nonequilibrium Green's function method. Under the condition that one of the three terminals is a voltage probe, we show that the linear conductance is symmetric with respect to the magnetic field (phase symmetry). However, in the nonlinear transport regime, the phase symmetry is broken. Unlike two-terminal transport, the phase symmetry is broken even in noninteracting electron systems. Based on the lowest-order nonlinear conductance coefficient with respect t…
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields we vary simultaneously the correlation time of the hyperfine interaction and the nuclear spin relaxation time and thereby the amplitude of the achieved dynamic nuclear polarization under optical pumping conditions. In applied transverse magnetic fields a change in the applied bias allows to switch from the anomalous Hanle effect to the standard electron spin …
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon …
The Kondo effect in coupled quantum dots is investigated from the viewpoint of transmission spectroscopy using the slave-boson formalism of the Anderson model. The antiferromagnetic spin-spin coupling $J$ between the dots is taken into account. Conductance $G$ through the dots connected in a series is characterized by the competition between the dot-dot tunneling coupling $V_{C}$ and the level broadening $Δ$ in the dots (dot-lead coupling). When $V_{C}/Δ< 1$, the Kondo resonance is formed between each dot and lead, which is replaced by a spin-singlet state in the dots at low gate voltages. The…
The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage independent contribution.
We derive an analytical expression for the backaction dephasing rate, which characterizes the disturbance induced by coupling with an environment containing a quantum dot detector (QDD). In this letter, we show that charge noise induces backaction dephasing in an explicit form. In the linear transport regime through a QDD, this backaction dephasing induced by charge noise can be explained as a relaxation by an inelastic electron-electron scattering in Fermi liquid theory. In the low bias voltage regime, the increase or decrease of dephasing rate depends on the QDD energy level, the linewidth f…
Using nonequilibrium Green functions and several complementary many-body approximations we calculate shot noise and spin dependent conductance in carbon nanotube semiconducting quantum dot in spin-orbital Kondo regime. We point out on the possibility of reaching giant values of tunnel magnetoresistance in this range and discuss a prospect of its gate control. We also analyze the influence of symmetry breaking perturbations on the shot noise with special emphasis on spin dependent effects. The gate and bias dependencies of noise Fano factors influenced by magnetic field, polarization of electro…
Results of calculations and high source-drain transport measurements are presented which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously-chosen gate voltage alters the ground-state of an electron pair from an entagled spin singlet to a spin triplet.
We report excited-state spectroscopy on a quantum dot side-coupled to a quantum wire with accurate energy estimation. Our method utilizes periodic voltage pulses on the dot, and the energy calibration is performed with reference to the bias voltage across the wire. We demonstrate the observation of the orbital excited state and the Zeeman splitting in a single dot.
We study the spin-polarized transport through a triple quantum dot molecule weakly coupled to ferromagnetic leads. The analysis is performed by means of the real-time diagrammatic technique including up to the second order of perturbation expansion with respect to the tunnel coupling. The emphasis is put on the impact of dark states on spin-resolved transport characteristics. It is shown that the interplay of coherent population trapping and cotunneling processes results in a highly nontrivial behavior of the tunnel magnetoresistance, which can take negative values. Moreover, a super-Poissonia…
We study electron transport through multiply-connected mesoscopic geometries containing interacting quantum dots. Our formulation covers both equilibrium and non-equilibrium physics. We discuss the relation of coherent transport channels through the quantum dot to flux-sensitive Aharonov-Bohm oscillations in the total conductance of the device. Contributions to transport in first and second order in the intrinsic line width of the dot levels are addressed in detail. We predict an interaction-induced asymmetry in the amplitude of the interference signal around resonance peaks as a consequence o…
We consider adiabatic pumping of electrons through a quantum dot. There are two ways to operate the pump: to create a dc current ${\bar I}$ or to create a dc voltage ${\bar V}$. We demonstrate that, for very slow pumping, ${\bar I}$ and ${\bar V}$ are not simply related via the dc conductance $G$ as $\bar I = \bar V G$. For the case of a chaotic quantum dot, we consider the statistical distribution of ${\bar V} G - {\bar I}$. Results are presented for the limiting cases of a dot with single channel and with multichannel point contacts.
We present a comprehensive investigation of the polarization properties of non-polar a-plane InGaN quantum dots (QDs) and their origin with statistically significant experimental data and rigorous k.p modelling. The unbiased selection and study of 180 individual QDs allow us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that a-plane InGaN QDs are highly insensitive to size differences, shape anisotropies, and indium content fluctuations. Furthermore, 91% of the studied QDs exhibit a polarization axis a…
Nonequilibrium electronic transport through a quantum dot coupled to ferromagnetic leads (electrodes) is studied theoretically by the nonequilibrium Green function technique. The system is described by the Anderson model with arbitrary correlation parameter $U$. Exchange interaction between the dot and ferromagnetic electrodes is taken into account {\it via} an effective molecular field. The following situations are analyzed numerically: (i) the dot is symmetrically coupled to two ferromagnetic leads, (ii) one of the two ferromagnetic leads is half-metallic with almost total spin polarization …
