We demonstrate that voltage-controlled negative index can be obtained in self-organized InAs quantum dot systems. As the bias voltage changes, the refractive index can be adjusted and controlled continuously from -7 to 7. Simultaneously, the absorption of light in the system will be very small. The single-negative index materials and the double-negative index materials can be achieved in different bias voltages.
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and an atomistic model based on the Keating potential. Calculations are performed in the cluster approximation using clusters containing about three million atoms belonging to 150 coordination spheres. The spatial distributions of the strain energy density and electron potential energy are calculated for different valleys forming the bottom of the silicon conduct…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as time-resolved charge detection experiments for electron flow through the quantum dot. We demonstrate that the Fano factor describing shot noise or time-correlations in single-electron transport depends in the theoretically expected way on the asymmetry of the tunneling barriers even in a regime where the thermal energy $k_\mathrm{B}T$ is comparable to the singl…
In this work, we present a theoretical study of polaron states in a double quantum dot system. We present realistic calculations which combine 8 band \kp model, configuration interaction approach and collective modes method. We investigate the dependence of polaron energy branches on axial electric field. We show that coupling between carriers and longitudinal optical phonons via Fröhlich interaction leads to qualitative and quantitative reconstruction of the optical spectra. In particular, we study the structure of resonances between the states localized in different dots. We show that $p$-sh…
A deeper sense of advantages over the planar quantum dots and the foreseen applications in the single-electron devices and quantum computation have given vertically stacked quantum dots (VSQD) a width of interest. Here, we embark on the collective excitations in a quantum wire made-up of vertically stacked, self-assembled InAs/GaAs quantum dots in the presence of an applied magnetic field in the symmetric gauge. We compute and illustrate the influence of an applied magnetic field on the behavior characteristics of the density of states, Fermi energy, and collective (magnetoplasmon) excitations…
We report on the theoretical investigation of the elementary electronic excitations in a quantum wire made up of vertically stacked self-assembled InAs/GaAs quantum dots. The length scales (of a few nanometers) involved in the experimental setups prompt us to consider an infinitely periodic system of two-dimensionally confined (InAs) quantum dot layers separated by GaAs spacers. The the Bloch functions and the Hermite functions together characterize the whole system. We then make use of the Bohm-Pines' (full) random-phase approximation in order to derive a general nonlocal, dynamic dielectric …
A theoretical investigation has been made of the magnetoplasmon excitations in a quasi-one-dimensional electron system comprised of vertically stacked, self-assembled InAs/GaAs quantum dots. The smaller length scales involved in the experiments impel us to consider a perfectly periodic system of two-dimensionally confined InAs quantum dot layers separated by GaAs spacers. Subsequent system is subjected to a two-dimensional confining (harmonic) potential in the x-y plane and an applied magnetic field (B) in the symmetric gauge. This scheme defines virtually a system of quantum wire comprised of…
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of…
We study three-electron energy spectra in Si/SiGe single and vertically coupled double quantum dots where all the relevant effects, such as, the Zeeman splitting, spin-orbit coupling, valley coupling and electron-electron Coulomb interaction are explicitly included. In the absence of magnetic field, our results in single quantum dots agree well with the experiment by Borselli {\em et al.} [Appl. Phys. Lett. {\bf 98}, 123118 (2011)]. We identify the spin and valley configurations of the ground state in the experimental cases and give a complete phase-diagram-like picture of the ground state con…
We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the a…
With any roughness at the interface of an indirect-bandgap semiconducting dot, the phase of the valley-orbit coupling can take on a random value. This random value, in double quantum dots, causes a large change in the exchange splitting. We demonstrate a simple analytical method to calculate the phase, and thus the exchange splitting and singlet-triplet qubit frequency, for an arbitrary interface. We then show that, with lateral control of the position of a quantum dot using a gate voltage, the valley-orbit phase can be controlled over a wide range, so that variations in the exchange splitting…
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hopping between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange fiel…
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
We investigate the interplay between long-range and direct photon-assisted transport in a triple quantum dot chain where local ac voltages are applied to the outer dots. We propose the phase difference between the two ac voltages as an external parameter, which can be easily tuned to manipulate the current characteristics. For gate voltages in phase opposition we find quantum destructive interferences analogous to the interferences in closed-loop undriven triple dots. As the voltages oscillate in phase, interferences between multiple paths give rise to dark states. Those totally cancel the cur…
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain poc…
We proposed and demonstrated that the nuclear spins of the host lattice in GaAs double quantum dots can be strongly polarized in either of two opposite directions, parallel or antiparallel to an external magnetic field. The direction is selected simply by adjusting the dc source-drain voltage of the device. This nuclear polarization manifests itself by repeated controlled electron-nuclear spin scattering in the Pauli spin blockade state. Polarized nuclei are also controlled coherently by means of nuclear magnetic resonance (NMR). This work confirmed that the nuclear spins in quantum dots are i…
We propose a quantum dot (QD) implementation of a quantum state transfer channel. The proposed channel consists of N vertically stacked QDs with the nearest neighbor tunnel coupling, placed in an axial electric field. We show that the system supports high-fidelity transfer of the state of a terminal dot both by free evolution and by adiabatic transfer. The protocol is to a large extent insensitive to inhomogeneity of the energy parameters of the dots and requires only a global electric field.
We theoretically study the effects of bias-controlled interdot tunneling in vertically coupled quantum dots on the emission properties of spin excitons in various bias-controlled tunneling regimes. As a main result, for strongly coupled dots we predict substantial reduction of optical fine structure splitting without any drop in the optical oscillator strength. This special reduction diminishes the distinguibility of polarized decay paths in cascade emission processes suggesting the use of stacked quantum dot molecules as entangled photon-pair sources.
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum states of magnetic polarons. The strong anisotropy of magnetic polaron states in disk-like quantum dots with holes comes from the spin splitting in the valence band. The binding energy and spontaneous magnetization of quantum dots oscillate with the number of particles and reflect the shell structure. Due to the Coulomb interaction, the maximum binding ener…
We derive formal expressions of time-dependent energy and heat currents through a nanoscopic device using the Keldysh nonequilibrium Green function technique. Numerical results are reported for a metal/dot/metal junction where the dot level energy is abruptly changed by a step-shaped voltage pulse. Analytical linear responses are obtained for the time-dependent thermoelectric coefficients. We show that the Seebeck coefficient can be enhanced in the transient regime up to an amount (here rising 40%) controlled by both the dot energy and the height of the voltage step.
We consider an interacting quantum dot connected to two reservoirs driven at distinct voltage/temperature and we study the correlations between charge and heat currents first as a function of the applied voltage bias, and second as a function of the temperature gradient between the two reservoirs. The Coulomb interactions in the quantum dot are treated using the Hartree approximation and the dot occupation number is determined self-consistently. The correlators exhibit structures in their voltage dependency which are highly non-linear when the coupling between the dot and the reservoirs is wea…
The paper proposes the method to analyze the internal dynamics of nanoscopic systems by periodic modulation of the electrochemical potentials of the attached leads and measuring the time-averaged current. The idea is presented using the example of the a double quantum dot coupled to one nonmagnetic and one spin-polarized lead. The current flowing through the molecule is shown to depend on both the frequency of the modulation and the exchange coupling between the electrons occupying the molecule. In particular, one can observe a pronounced oscillatory behavior of the current-frequency dependenc…
The capacitive couplings between gate-defined quantum dots and their gates vary considerably as a function of applied gate voltages. The conversion between gate voltages and the relevant energy scales is usually performed in a regime of rather symmetric dot-lead tunnel couplings strong enough to allow direct transport measurements. Unfortunately this standard procedure fails for weak and possibly asymmetric tunnel couplings, often the case in realistic devices. We have developed methods to determine the gate voltage to energy conversion accurately in the different regimes of dot-lead tunnel co…
We study three-terminal linear and nonlinear transport through an Aharonov-Bohm interferometer containing a double quantum dot using the nonequilibrium Green's function method. Under the condition that one of the three terminals is a voltage probe, we show that the linear conductance is symmetric with respect to the magnetic field (phase symmetry). However, in the nonlinear transport regime, the phase symmetry is broken. Unlike two-terminal transport, the phase symmetry is broken even in noninteracting electron systems. Based on the lowest-order nonlinear conductance coefficient with respect t…
Transmission and reflection of an electromagnetic pulse through a dielectric slab doped with the quantum dot molecules is investigated. It is shown that the transmitted and reflected pulses depend on the inter-dot tunneling effect and can be controlled by applying a gate voltage.
We demonstrate bias control of the hyperfine coupling between a single electron in an InAs quantum dot and the surrounding nuclear spins monitored through the positively charged exciton X+ emission. In applied longitudinal magnetic fields we vary simultaneously the correlation time of the hyperfine interaction and the nuclear spin relaxation time and thereby the amplitude of the achieved dynamic nuclear polarization under optical pumping conditions. In applied transverse magnetic fields a change in the applied bias allows to switch from the anomalous Hanle effect to the standard electron spin …
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon …
We derive an analytical expression for the backaction dephasing rate, which characterizes the disturbance induced by coupling with an environment containing a quantum dot detector (QDD). In this letter, we show that charge noise induces backaction dephasing in an explicit form. In the linear transport regime through a QDD, this backaction dephasing induced by charge noise can be explained as a relaxation by an inelastic electron-electron scattering in Fermi liquid theory. In the low bias voltage regime, the increase or decrease of dephasing rate depends on the QDD energy level, the linewidth f…
