We investigate the Josephson effect in the graphene nanoribbons of length $L$ smaller than the superconducting coherence length and an arbitrary width $W$. We find that in contrast to an ordinary superconducting quantum point contact (SQPC) the critical supercurrent $I_c$ is not quantized for the nanoribbons with smooth and armchair edges. For a low concentration of the carriers $I_c$ decreases monotonically with lowering $W/L$ and tends to a constant minimum for a narrow nanoribbon with $W\lesssim L$. The minimum $I_c$ is zero for the smooth edges but $eΔ_{0}/\hbar$ for the armchair edges. At higher concentrations of the carriers this monotonic variation acquires a series of peaks. Further analysis of the current-phase relation and the Josephson coupling strength $I_cR_N$ in terms of $W/L$ and the concentration of carriers revels significant differences with those of an ordinary SQPC. On the other hand for a zigzag nanoribbon we find that, similar to an ordinary SQPC, $I_c$ is quantized but to the half-integer values $(n+1/2)4eΔ_{0}/\hbar$.
Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of…
Magic-angle twisted trilayer graphene (MATTG) recently exhibited robust superconductivity at a higher transition temperature (TC) than the bilayer version. With electric gating from both the top and bottom sides, the superconductivity was found to be closely associated to two conditions: the finite broken mirror symmetry and carrier concentrations between two to three carriers per moiré unite cell. Both conditions may be achieved by graphene-metal contacts where charge transfers and interfacial electric fields are generated to balance work function mismatch. In this study, we explore the super…
The problem of supercurrent in superconducting graphene is revisited and the supercurrent is calculated within the mean-field model employing the two-component wave functions on a honeycomb lattice with pairing between different valleys in the Brillouin zone. We show that the supercurrent within the linear approximation in the order-parameter-phase gradient is always finite even if the doping level is exactly zero.
We show that effective superconducting orders generally emerge at low energy in the superconducting state of graphene with conventionally defined pairing symmetry . We study such a particular interesting example, the $d_{x^2-y^2}+id'_{xy}$ spin singlet pairing superconducting state in graphene, which can be generated by electronic correlation as well as induced through a proximity effect with a d-wave superconductor. We find that effectively the d-wave state is a state with mixed s-wave and exotic $p+ip$-wave pairing orders at low energy. This remarkable property leads to distinctive supercond…
We argue that by inducing superconductivity in graphene via the proximity effect, it is possible to observes the "quantum valley Hall effect". In the presence of magnetic field, supercurrent causes "valley pseudospin" to accumulate at the edges of the superconducting strip. This, and the structure of the superconducting vortex core, provide possibilities to experimentally observe aspects of the "deconfined quantum criticality".
We have investigated transport through graphene Andreev interferometers exhibiting reentrance of the superconducting proximity effect. We observed a crossover in the Andreev conductance oscillations as a function of gate voltage ($V_{BG}$). At high $V_{BG}$ the energy-dependent oscillation amplitude exhibits a scaling predicted for non-interacting electrons, which breaks down at low $V_{BG}$. The phenomenon is a manifestation of electron-electron interactions, whose main effect is to shorten the single-particle phase coherence time $τ_ϕ$. These results indicate that graphene provides a useful …
Graphene has exhibited a wealth of fascinating properties, but is also known not to be a superconductor. Remarkably, we show that graphene can be made a conventional Bardeen-Cooper-Schrieffer superconductor by the combined effect of charge doping and tensile strain. While the effect of doping is obvious to enlarge Fermi surface, the effect of strain is profound to greatly increase the electron-phonon coupling. At the experimental accessible doping (4E+14cm-2) and strain (~16%) levels, the superconducting critical temperature Tc reaches as high as ~30 K, the highest for a single-element materia…
Simultaneous transport and tunneling spectroscopy of moiré graphene: Distinct observation of the superconducting gap and signatures of nodal superconductivity
When magnetic atoms are inserted inside a superconductor, the superconducting order is locally depleted as a result of the antagonistic nature of magnetism and superconductivity1. Thereby, distinctive spectral features, known as Yu-Shiba-Rusinov states, appear inside the superconducting gap2-4. The search for Yu-Shiba-Rusinov states in different materials is intense, as they can be used as building blocks to promote Majorana modes5 suitable for topological quantum computing6. Here we report the first realization of Yu-Shiba-Rusinov states in graphene, a non-superconducting 2D material, and wit…
Bilayer graphene has two non-equivalent sublattices and, therefore, the same adatom impurity can manifest in spectrally distinct ways-sharp versus broad resonances near the charge neutrality-depending on the sublattice it adsorbs at. Employing Green's function analytical methods and the numerical Kwant package we investigate the spectral and transport interplay between the resonances and superconducting coherence induced in bilayer graphene by proximity to an s-wave superconductor. Analyzing doping and temperature dependencies of quasi-particle spin-relaxation rates, energies of Yu-Shiba-Rusin…
We present here the results on superconducting properties in tantalum thin films (100nm thick) deposited on three-dimensional graphene (3DG) and carbon structures. A superconducting transition is observed in both composite thin films with a superconducting transition temperature of 1.2K and 1.0K, respectively. We have further measured the magnetoresistance at various temperatures and differential resistance dV/dI at different magnetic fields in these two composite thin films. In both samples, a much large critical magnetic field (~ 2 Tesla) is observed and this critical magnetic field shows li…
We study the effect of impurities in superconducting graphene and discuss their influence on the local electronic properties. In particular, we consider the case of magnetic and non-magnetic impurities being either strongly localized or acting as a potential averaged over one unit cell. The spin dependent local density of states is calculated and possibilities for visualizing impurities by means of scanning tunneling experiments is pointed out. A possibility of identifying magnetic scatters even by non spin-polarized scanning tunneling spectroscopy is explained.
We present transfer-length-method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and it's low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance.
Graphene is the physical realization of many fundamental concepts and phenomena in solid state-physics, but in the long list of graphene remarkable properties, a fundamental block is missing: superconductivity. Making graphene superconducting is relevant as the easy manipulation of this material by nanolytographic techniques paves the way to nanosquids, one-electron superconductor-quantum dot devices, superconducting transistors at the nano-scale and cryogenic solid-state coolers. Here we explore the doping of graphene by adatoms coverage. We show that the occurrence of superconductivity depen…
Motivated by recent scanning tunneling experiments on zigzag-terminated graphene this paper investigates an interplay of evanescent and extended quasiparticle states in the local density of states (LDOS) near a zigzag edge using the Green's function of the Dirac equation. A model system is considered where the local electronic structure near the edge influences transport of both normal and superconducting electrons via a Fano resonance. In particular, the temperature enhancement of the critical Josephson current and 0-pi transitions are predicted.
We show that a graphene pnp junction with a central superconducting electrode acts as a Veselago lens for incoming electrons by focusing them and their phase-conjugated counterpart (holes) into different points of the optical axis. This selective focusing suggested by a simple trajectory analysis is confirmed by fully microscopic calculations. Although the focusing pattern is degraded by deviations from the ideal conditions we show that it remains visible for a wide range of parameters. We discuss how this property can be useful for the detection of entangled electron pairs.
Using ab-initio methods we investigate the possibility of three-terminal graphene "T-junction" devices and show that these all-graphene edge contacts are energetically feasible when the 1D interface itself is free from foreign atoms. We examine the energetics of various junction structures as a function of the atomic scale geometry. Three-terminal equilibrium Green's functions are used to determine the transmission spectrum and contact resistance of the system. We find that the most symmetric structures have a significant binding energy, and we determine the contact resistances in the junction…
Using highly efficient simulations of the tight-binding Bogoliubov-de Gennes model we solved self-consistently for the pair correlation and the Josephson current in a Superconducting-Bilayer graphene-Superconducting Josephson junction. Different doping levels for the non-superconducting link are considered in the short and long junction regime. Self-consistent results for the pair correlation and superconducting current resemble those reported previously for single layer graphene except in the Dirac point where remarkable differences in the proximity effect are found as well as a suppression o…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a process of metal-catalyzed etching in hydrogen, multiple nano-sized pits with zigzag edges are created in the graphene that form strong chemical bonds with deposited nickel metallization for source-drain contacts without the need for further annealing. This facile contact treatment prior to electrode metallization results in contact resistance as low as 100 ohm…
We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap, but quickly saturate for transfer lengths of the order of 20 Å. For contacts overlapping more than this transfer length, the $R_c$ can be lower than the 100 Ω$\cdot$μm mark. On the other hand, edge graphite-graphene contacts are expected to have very low contact resistance.
We perform first-principles calculations of electron transport across a nickel-graphene interface. Four different geometries are considered, where the contact area, graphene and nickel surface orientations and the passivation of the terminating graphene edge are varied. We find covalent bond formation between the graphene layer and the nickel surface, in agreement with other theoretical studies. We calculate the energy-dependent electron transmission for the four systems and find that the systems have very similar edge contact resistance, independent of the contact area between nickel and grap…
We describe the formation of superconducting states in graphene in the presence of pseudo-Landau levels induced by strain, when time reversal symmetry is preserved. We show that superconductivity in strained graphene is quantum critical when the pseudo-Landau levels are completely filled, whereas at partial fillings superconductivity survives at weak coupling. In the weak coupling limit, the critical temperature scales \emph{linearly} with the coupling strength and shows a sequence of quantum critical points as a function of the filling factor that can be accessed experimentally. We argue that…
We find that multiple Andreev reflections mediating the transport in superconducting point contacts are strongly affected by a small amount of impurities in the area of the contact. We also argue that the model based on Zener transitions within independent conducting channels is not suitable for kinetic processes in multichannel contacts.
We investigate the Cooper-pair propagation and the proximity effect in graphene under conditions in which the distance L between superconducting electrodes is much larger than the width W of the contacts. In the case of undoped graphene, supercurrents may exist with a spatial decay proportional to W^2/L^3. This changes upon doping into a 1/L^2 behavior, opening the possibility to observe a supercurrent over length scales above 1 micron at suitable doping levels. We also show that there is in general a crossover temperature T ~ v_F/k_B L that marks the onset of the strong decay of the supercurr…
We explore Andreev states at the interface of graphene and a superconductor for a uniform pseudo-magnetic field. Near the zeroth-pseudo Landau level, we find a topological transition as a function of applied Zeeman field, at which a gapless helical mode appears. This 1D mode is protected from backscattering as long as intervalley- and spin-flip scattering are suppressed. We discuss a possible experimental platform to detect this gapless mode based on strained suspended membranes on a superconductor, in which dynamical strain causes charge pumping
We study Andreev processes and nonlocal transport in a three-terminal graphene-superconductor hybrid system under a quantizing perpendicular magnetic field [G.-H. Lee et al., Nature Phys. 13, 693 (2017)]. We find that the amplitude of the crossed Andreev reflection (CAR) processes crucially depends on the orientation of the lattice. By employing Landauer-Büttiker scattering theory, we find that CAR is generally very small for a zigzag edge, while for an armchair edge it can be larger than the normal transmission, thereby resulting in a negative nonlocal resistance. In the case of an armchair e…
The effects of Au grains on graphene conduction and doping are investigated in this report. To obtain a clean Au-graphene contact, Au grains are deposited over graphene at elevated temperature and in high vacuum, before any chemical processing. The bulk and the effective contact resistance versus gate voltage demonstrate that Au grains cause p-doping in graphene. The Fermi level shift is in agreement with first principles calculations, but the equilibrium separation we find between the graphene and the top-most Au layer is larger than predicted. Nonequilibrium electron transport displays giant…
Potential steps naturally develop in graphene near metallic contacts. We investigate the influence of these steps on the transport in graphene Field Effect Transistors. We give simple expressions to estimate the voltage-dependent contribution of the contacts to the total resistance and noise in the diffusive and ballistic regimes.
Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.
We report an approach to achieve low-resistance contacts to MoS2 transistors with the intrinsic performance of the MoS2 channel preserved. Through a dry transfer technique and a metal-catalyzed graphene treatment process, nickel-etched-graphene electrodes were fabricated on MoS2 that yield contact resistance as low as 200 ohm-um. The substantial contact enhancement (~2 orders of magnitude) as compared to pure nickel electrodes, is attributed to the much smaller work function of nickel-graphene electrodes, together with the fact that presence of zigzag edges in the treated graphene surface enha…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole conductance asymmetry can be modulated by the bottom gate. In this letter, we explain this observation by postulating the presence of an effective thin interfacial dielectric layer between the metal contact and the underlying graphene. Electrical results from quantum transport calculations accounting for this modified electrostatics corroborate well with the experim…
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance. Moreover, graphene exhibits insulating behavior for out-of-the-plane conduction. Extrinsically, surface contamination introduced by photoresist residue or different adsorbed species during standard lithography processing alters graphene's intrinsic properties by uncontrolled doping and increased scattering which results in high and inconsistent co…
The effect of contact architecture, graphene defect density and metal-semiconductor work function difference on resistivity of metal-graphene contacts have been investigated. An architecture with metal on the bottom of graphene is found to yield resistivities that are lower, by a factor of 4, and most consistent as compared to metal on top of graphene. Growth defects in graphene film were found to further reduce resistivity by a factor of 2. Using a combination of method and metal used, the contact resistivity of graphene has been decreased by a factor of 10 to 1200 +- 250 Ohm-um using Palladi…
We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5-1.5 k$Ω$ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic fields, an insulating behaviour in the quantum Hall …
We report on noise and thermal conductance measurements taken in order to determine an upper bound on the performance of graphene as a terahertz photon detector. The main mechanism for sensitive terahertz detection in graphene is bolometric heating of the electron system. To study the properties of a device using this mechanism to detect terahertz photons, we perform Johnson noise thermometry measurements on graphene samples. These measurements probe the electron-phonon behavior of graphene on silicon dioxide at low temperatures. Because the electron-phonon coupling is weak in graphene, superc…
Edge contact geometries are thought to yield ultralow contact resistances in most non-ferromagnetic metal-graphene interfaces owing to their large metal-graphene coupling strengths. Here, we examine the contact resistance of edge- versus surface-contacted ferromagnetic metal-graphene interfaces (i.e. nickel- and cobalt-graphene interfaces) using both single-layer and few-layer graphene. Good qualitative agreement is obtained between theory and experiment. In particular, in both theory and experiment, we observe that the contact resistance of edge-contacted ferromagnetic metal-graphene interfac…
The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. Here we have investigated the contact noise in graphene field effect transistors of varying device geometry and contact configuration, with carrier mobility ranging from 5,000 to 80,000$~$cm$^{2}$V$^{-1}$s$^{-1}$. Our phenomenological model for contact noise due to current crowding in purely two dimensional conductors,…
We report on Andreev reflections at clean NbSe2-bilayer graphene junctions. The high transparency of the junction, which manifests as a large conductance enhancement of up to 1.8, enables us to see clear evidence of a proximity-induced superconducting gap in bilayer graphene and two Andreev reflections through a vertical NbSe2-graphene and a lateral graphene-graphene junction respectively. Quantum transport simulations capture the complexity of the experimental data and illuminate the impact of various microscopic parameters on the transmission of the junction. Our work establishes the practic…
We study the transport of charge carriers through finite graphene structures. The use of numerical exact kernel polynomial and Green function techniques allows us to treat actual sized samples beyond the Dirac-cone approximation. Particularly we investigate disordered nanoribbons, normal-conductor/graphene interfaces and normal-conductor/graphene/normal-conductor junctions with a focus on the behavior of the local density of states, single-particle spectral function, optical conductivity and conductance. We demonstrate that the contacts and bulk disorder will have a major impact on the electro…
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point, and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative RC originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more su…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.
The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one of the most promising solutions for realizing low ohmic contacts. In this paper the fabrication and characterization of edge contacts to large area CVD-grown monolayer graphene by means of optical lithography using CMOS compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the contact resistance by Transfer Line Method (TLM) as well as the di…
The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated …
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact resistance is quantitatively the same for single-, bi-, and tri-layer graphene ($\sim800 \pm 200 Ωμm$), and is in all cases independent of gate voltage and temperature. We argue that the observed behavior is due to charge transfer from the metal, causing the Fermi level in the graphene region under the contacts to shift far away from the charge neutrality poin…
Graphene is a very promising material for nanoelectronics applications due to its unique and remarkable electronic and thermal properties. However, when deposited on metallic electrodes the overall thermal conductivity is significantly decreased. This phenomenon has been attributed to the mismatch between the interfaces and contact thermal resistance. Experimentally, one way to improve the graphene/metal contact is thorough high-temperature annealing, but the detailed mechanisms behind these processes remain unclear. In order to address these questions, we carried out fully atomistic reactive …
We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) …
The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n+-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath Au maintains a linear DOS - energy relationship except near the Dirac point, whereas the DOS of graphene underneath Ni is broken and largely enhanced around the Dirac point, resulting in only a slight modulation of the Fermi energy. Moreover, the DOS of graphene in the contact structure is correlated with the contact resistivity measured using devices fabrica…
Resist residue from the device fabrication process is a general and significant source of the metal/graphene contact interface contamination. In this paper, Ultraviolet-Ozone (UVO) treatment is proven to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices, which were fabricated by using UVO treatment of the metal/graphene contact region, show that stable and highly reproducible low contact resistance between metal and graphene is obtained without affecting the electrical properties of the graphene channel itself.
We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently solved with the Poisson equation at the ballistic limit. Our treatment of metal-graphene (M-G) contacts captures: (1) the doping effect due to the shift of the Fermi level in graphene contacts, (2) the density-of-states (DOS) broadening effect inside graphene contacts due to Metal-Induced-States (MIS). Our results confirm the asymmetric transfer characterist…
A near-field scanning optical microscope is used to locally induce photocurrent in a graphene transistor with high spatial resolution. By analyzing the spatially resolved photo-response, we find that in the n-type conduction regime a p-n-p structure forms along the graphene device due to the doping of the graphene by the metal contacts. The modification of the electronic structure is not limited only underneath the metal electrodes, but extends 0.2-0.3 um into the graphene channel. The asymmetric conduction behavior of electrons and holes that is commonly observed in graphene transistors is di…
We theoretically demonstrate the formation of a new type of unconventional superconductivity in graphene materials, which exhibits gapless property. The studied superconductivity is based on an interlayer pairing of chiral electrons in bilayer graphene, which results in an exotic s-wave spin-triplet condensate order with anomalous thermodynamic properties. These include the possibility of a temperature induced condensation causing an increase of the pairing gap with increasing temperature, and an entropy of the stable superconducting state which can be higher than its value in the normal state…
We fabricate graphene-TiOx-Al tunnel junctions and characterize their radio frequency response. Below the superconducting critical temperature of Al and when biased within the superconducting gap, the devices show enhanced dynamic resistance which increases with decreasing temperature. Application of radio frequency radiation affects the dynamic resistance through electronic heating. The relation between the electron temperature rise and the absorbed radiation power is measured, from which the bolometric parameters, including heat conductance, noise equivalent power and responsivity, are chara…
Electronic localization in narrow graphene constrictions is theoretically studied, and it is found that long-lived quasibound states (QBSs) can exist in a class of ultrashort graphene quantum point contacts (QPCs). These QBSs are shown to originate from the dispersionless edge states that are characteristic of the electronic structure of generically terminated graphene, in which pseudo-time-reversal symmetry is broken. The QBSs can be regarded as interface states confined between two graphene samples, and their properties can be modified by changing the sizes of the QPC and the interface geome…
Nano-electromechanical (NEM) contact switches have been extensively studied to suppress the limitations of conventional complementary metal-oxide-semiconductor (CMOS) transistors. The attributes of NEM contact switches includes reduced power consumption, reduced off-state leakage current, increased on-state current and sub-thermal switching. However, unacceptably high pull-in voltage and low contact lifetime posed a significant challenge for the use of NEM contact switches in energy efficient CMOS applications. Here, we demonstrate a graphene-based electro-statically actuated NEM contact switc…
We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not i…
We report the use of bilayer graphene as an atomically-smooth contact for nanoscale devices. A two-terminal Bucky ball (C60) based molecular memory is fabricated with bilayer graphene as a contact on the polycrystalline nickel electrode. Graphene provides an atomically-smooth covering over an otherwise rough metal surface. The use of graphene additionally prohibits the electromigration of nickel atoms into the C60 layer. The devices exhibit a low-resistance state in the first sweep cycle and irreversibly switch to a high resistance state at 0.8-1.2 V bias. The reverse sweep has a hysteresis be…
We investigate the shot noise of an impurity-free graphene flake as a function of the chemical potential. For large width to length ratios, this noise has been predicted and observed to exhibit universal characteristics at the Dirac point. Furthermore, a sharp decrease of the shot noise with increasing carrier density has been predicted. This decrease has also been observed in experiments, but with much smaller slope than predicted. We reconcile this discrepancy between theory and experiment by including the effects of the contacts to the graphene ribbon.
