We present a microscopic model for a line junction formed by counter or co-propagating single mode quantum Hall edges corresponding to different filling factors. The ends of the line junction can be described by two possible current splitting matrices which are dictated by the conditions of both lack of dissipation and the existence of a linear relation between the bosonic fields. Tunneling between the two edges of the line junction then leads to a microscopic understanding of a phenomenological description of line junctions introduced some time ago. The effect of density-density interactions between the two edges is considered, and renormalization group ideas are used to study how the tunneling parameter changes with the length scale. This leads to a power law variation of the conductance of the line junction with the temperature. Depending on the strength of the interactions the line junction can exhibit two quite different behaviors. Our results can be tested in bent quantum Hall systems fabricated recently.
We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in clean and disordered arrays (both weak and strong disorder effects). The offset voltage dependent modulation of the current is highly sensitive to background charge disorder and exhibits substantial variation depending on the strength of the disorder. We show that while small fractional charge filling factors are likely to be washed…
Hall effect in SN and SNS junctions is considered. It is shown that at small temperature the Hall voltage is significantly suppressed as compared to its normal metal value. The time dependence of the Hall voltage in SNS junctions has a form of narrow pulses with the Josephson frequency.
Both quantum spin Hall and quantum anomalous Hall states are novel states of quantum matter with promising applications. We propose junction quantum wells comprising II-VI, III-V or IV semiconductors as a large class of new materials realizing the quantum spin Hall state. Especially, we find that the bulk band gap for the quantum spin Hall state can be as large as 0.1 eV. Further more, magnetic doping would induce the ferromagnetism in these junction quantum wells due to band edge singularities in the band-inversion regime and to realize the quantum anomalous Hall state.
We show that novel fixed points (characterized by matrices which specify the splitting of the currents at the junction) can be accessed in a system which contains a junction of three quantum Hall line junctions. For such a junction of fractional quantum Hall edge states, we find that it is possible for both the flower (single droplet) and islands (three droplets) configurations to be stable in an intermediate region, for a range of values of the inter-edge repulsive interactions. A measurement of the tunneling conductance as a function of the gate voltage controlling inter-edge repulsions can …
A quantum Hall line junction system consists of a one-dimensional Luttinger liquid (LL) and two chiral channels that allow density waves incident upon and reflected by the LL to be measured separately. We demonstrate that interactions in a quantum Hall line junction system can be probed by studying edge magnetoplasmon absorption spectra and their polarization dependences. Strong interactions in the junction lead to collective modes that are isolated in either Luttinger liquid or contact subsystems.
We have studied the tachyonic excitations in the junction of two topological insulators in the presence of an external magnetic field. The Landau levels, evaluated from an effective two-dimensional model for tachyons, and from the junction states of two topological insulators, show some unique properties not seen in conventional electrons systems or in graphene. The $ν=1/3$ fractional quantum Hall effect has also a strong presence in the tachyon system.
We propose tunnel junctions of a Hall bar and a superconducting lead, for observing Cooper-pair tunneling into singlet fractional quantum Hall edge states. These tunnel junctions provide a natural means of extracting precise information of the spin polarization and the filling factor of the state. The low energy regime of one of the set-ups is governed by a novel quantum entangled fixed point.
The ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junction exhibits thermal and electrical quantum Hall effects. The generated Hall voltage and transverse temperature gradient can be controlled by the directions of magnetizations in the FM leads, which inspires the use of FM-TI-FM junctions as electrical and as heat switches in spintronic devices. Thermal and electrical Hall coefficients are calculated as functions of the magnetization directions in ferromagnets and the spin-relaxation time in TI. Both the Hall voltage and the transverse temperature gradient decrease but are not com…
We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: $i$) both sides of the junction have the same carrier type, and $ii$) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band g…
In two recent articles [PRL 90, 026802 (2003); PRB 69, 085307 (2004)], we developed a transport theory for an extended tunnel junction between two interacting fractional-quantum-Hall edge channels, obtaining analytical results for the conductance. Ponomarenko and Averin (PA) have expressed disagreement with our theoretical approach and question the validity of our results (cond-mat/0602532). Here we show why PA's critique is unwarranted.
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could o…
Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating …
We present a detailed theory of transport through line junctions formed by counterpropagating single-branch fractional-quantum-Hall edge channels having different filling factors. Intriguing transport properties are exhibited when strong Coulomb interactions between electrons from the two edges are present. Such strongly correlated line junctions can be classified according to the value of an effective line-junction filling factor n that is the inverse of an even integer. Interactions turn out to affect transport most importantly for n=1/2 and n=1/4. A particularly interesting case is n=1/4 co…
We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains.
Anomalous and spin Hall effects are investigated theoretically for a magnetic tunnel junction where the applied voltage produces a Rashba spin-or bit coupling within the tunneling barrier layer. The ferromagnetic electrodes are the source of the spin-polarized current. The tunneling electrons experience a spin-orbit coupling inside the barrier due to the applied electrical field. Charge and spin Hall currents are calculated as functions of the position inside the barrier and the angle between the magnetizations of the electrodes. We find that both charge and spin Hall currents are located insi…
We present the theoretical description for a class of experimental setups that measure quantum Hall coefficients in ferromagnet-topological insulator-ferromagnet (FM-TI-FM) junctions. We predict that varying the magnetization direction in ferromagnets, one can change the induced Hall voltage and transverse temperature gradient from the maximal values, corresponding to the quantized Hall coefficients, down to their complete suppression to zero. We provide detailed analysis of thermal and electrical Hall resistances as functions of the magnetization directions in ferromagnets, the spin-scatterin…
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space wit…
Within the newly formulated composite fermion hierarchy the filling fraction of a spherical quantum Hall system is obtained when it can be expressed as an odd or even denominator fraction. A plot of $ν\frac{2S}{N-1}$ as a function of $2S$ for a constant number of particles (up to N=10001) exhibits structure of the fractional quantum Hall effect. It is confirmed that $ν_e +ν_h=1$ for all particle-hole conjugate systems, except systems with $N_e =N_h$, and $N_e=N_h \pm 1$.
We have studied a clean finite-length line junction between interacting counterpropagating single-branch fractional-quantum-Hall edge channels. Exact solutions for low-lying excitations and transport properties are obtained when the two edges belong to quantum Hall systems with different filling factors and interact via the long-range Coulomb interaction. Charging effects due to the coupling to external edge-channel leads are fully taken into account. Conductances and power laws in the current-voltage characteristics of tunneling are strongly affected by inter-edge correlations.
The Hall (RH) and bend (RB) resistance of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction--dividing the Hall bar geometry in two regions--leads to two distinct regimes exhibiting very different physics: 1) both regions are of n-type and 2) one region is n-type and the other p-type. In regime (1) a 'Hall plateau'--an enhancement of the resistance--appears for RH. On the other hand, in regime (2), we found a negative RH, which approaches zero for large B. The bend resi…
We demonstrate a device concept to fabricate resistance standards made of quantum Hall series arrays by using p-type and n-type graphene. The ambipolar nature of graphene allows fabricating series quantum Hall resistors without complex multi-layer metal interconnect technology, which is required when using conventional GaAs two-dimensional electron systems. As a prerequisite for a precise resistance standard we confirm the vanishing of longitudinal resistance across a p-n junction for metrological relevant current levels in the range of a few \muA.
We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance Rxx and a quantized Hall resistance Rxy, within 1% of the expected value of h/(4/11)e^2, were observed. The temperature dependence of the Rxx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at nu = 3/8 and 5/13.
We show that a nanometric four-probe ballistic junction can be used to check the presence of a transverse spin Hall current in a system with a Spin Orbit coupling not of the Rashba type, but rather due to the in-plane electric field. Indeed, the spin Hall effect is due to the presence of an effective small transverse magnetic field corresponding to the Spin Orbit coupling generated by the confining potential. The strength of the field and the junction shape characterize the quenching Hall regime, usually studied by applying semi-classical approaches. We discuss how a quantum mechanical relativ…
The coherence of quantum Hall (QH) edges play the deciding factor in demonstrating an electron interferometer, which has potential to realize a topological qubit. A Graphene p-n junction (PNJ) with co-propagating spin and valley polarized QH edges is a promising platform for studying an electron interferometer. However, though a few experiments have been attempted for such PNJ via conductance measurements, the edge dynamics (coherent or incoherent) of QH edges at a PNJ, where either spin or valley symmetry or both are broken, remain unexplored. In this work, we have carried out the measurement…
A low energy action for double-layer quantum Hall systems at filling fractions $ν= 2/m$ ($m$ an odd integer) is introduced. Interlayer antiferromagnetic exchange induces a phase with canted spin order, and also a spin-singlet phase. Universal properties of zero and finite temperature transitions are obtained. We compute the critical temperature at which the canted order vanishes in a Kosterlitz-Thouless transition. Implications for recent light scattering experiments at $ν= 2$ are noted.
Magneto-transport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings ($ν> 2$) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator $ν$ = 5/2 and 7/2 fillings; instead the observed states are at $ν= (i + p/(2p \pm 1))$ where $i$ = 2, 3, and $p$ = 1, 2, 3, and …
At low Landau level filling of a two-dimensional electron system, typically associated with the formation of an electron crystal, we observe local minima in Rxx at filling factors nu=2/11, 3/17, 3/19, 2/13, 1/7, 2/15, 2/17, and 1/9. Each of these developing fractional quantum Hall (FQHE) states appears only above a filling factor-specific temperature. This can be interpreted as the melting of an electron crystal and subsequent FQHE liquid formation. The observed sequence of FQHE states follow the series of composite fermion states emanating from nu=1/6 and nu=1/8.
The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and are accompanied by universal conductance fluctuations in the bipolar regime, which is in good agreement with theoretical predictions of the random matrix theory on quantum chaotic cavities. The calculated Fano factors can be used in an experimental identification of the underlying transport character.
We study theoretically reflection problem in the junction between a normal metal and an insulator characterized by a parameter $M$, which is a usual insulator for $M>0$ or a quantum spin Hall system for $M<0$. The spin rotation angle $α$ at the reflection is obtained in the plane of $M$ and the incident angle $θ$ measured from the normal to the interface. The $α$ shows rich structures around the quantum critical point M=0 and $θ=0$, i.e., $α$ can be as large as $\sim π$ at an incident angle in the quatum spin Hall case $M<0$ because the helical edge modes resonantly enhance the spin rotation, …
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scatterin…
We present an effective Hamiltonian for a bilayer quantum Hall system at filling factor $ν=1$ neglecting charge fluctuations. Our model is formulated in terms of spin and pseudospin operators and is an exact representation of the system within the above approximation. We analyze its low-lying excitations in terms of spin-wave theory. Moreover we add to previous first-principle exact-diagonalization studies concentrating on the quantum phase transition seen in this system.
We report simultaneous transport and scanning microwave impedance microscopy to examine the correlation between transport quantization and filling of the bulk Landau levels in the quantum Hall regime in gated graphene devices. Surprisingly, a comparison of these measurements reveals that quantized transport typically occurs below the complete filling of bulk Landau levels, when the bulk is still conductive. This result points to a revised understanding of transport quantization when carriers are accumulated by gating. We discuss the implications on transport study of the quantum Hall effect in…
We use a Mach-Zehnder quantum Hall interferometer of a novel design to investigate the interference effects at fractional filling factors. Our device brings together the advantages of usual Mach-Zehnder and Fabry-Perot quantum Hall interferometers. It realizes the simplest-for-analysis Mach-Zehnder interference scheme, free from Coulomb blockade effects. By contrast to the standard Mach-Zehnder realization, our device does not contain an etched region inside the interference loop. For the first time for Mach-Zehnder interference scheme, the device demonstrates interference oscillations with $Φ…
We discuss the Berry curvature calculations of the Hall viscosity for the unprojected to the lowest Landau level wave function of the Fermi-liquid-like state. We conclude, within assumptions made, that in the linear response, with small deformation of the system and in the thermodynamic limit, the Hall viscosity takes the value characteristic for the Laughlin states. We present arguments that the value is the same even for general deformations in the same limit.
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied we predict oscillations in the Hall and the bend resistance as function of the magnetic field which are a consequence o…
Opposite spin Landau levels in a quantum well can be brought into coincidence by tilting the magnetic field away from normal orientation. We demonstrate that the magnetotransport anomaly at integer filling factors that was recently discovered by Pan {\it et al} is due to such a coincidence. By performing exact diagonalization calculations using microscopically evaluated effective electron-electron interactions, we are able to establish that the electronic ground state at coincidence is an Ising quantum Hall ferromagnet and that the low energy excitations correspond to the formation of a domain…
Kang et al. have recently observed a remarkable zero-bias anomaly in the spectrum for electron tunneling between two 2D electron gases separated laterally by a narrow but high barrier in the presence of a perpendicular quantising magnetic field. We argue that this is a result of interedge phase coherence analogous to the interlayer phase coherence in quantum Hall (QHE) bilayer systems. The disruption of the QHE by the barrier is 'healed' by strong coulomb exchange enhancement of the weak tunneling through the barrier.
We study the Josephson effect in a quantum spin Hall system coupled to a localized magnetic impurity. As a consequence of the fermion parity anomaly, the spin of the combined system of impurity and spin-Hall edge alternates between half-integer and integer values when the superconducting phase difference across the junction advances by $2π$. This leads to characteristic differences in the splittings of the spin multiplets by exchange coupling and single-ion anisotropy at phase differences, for which time-reserval symmetry is preserved. We discuss the resulting $8π$-periodic (or $\mathbb{Z}_4$)…
Transport studies of a bent quantum Hall junction at integer filling factors show strongly insulating states at higher fields. In this paper we analyze the strongly insulating behavior as a function of temperature T and dc bias V, in order to classify the localization mechanisms responsible for the insulating state. The temperature dependence suggests a crossover from activated nearest-neighbor hopping at higher T to variable-range hopping conduction at lower T. The base temperature electric field dependence is consistent with 1D variable-range hopping conduction. We observe almost identical b…
We report on the observation of a new spin mode in a quantum Hall system in the vicinity of odd electron filling factors under experimental conditions excluding the possibility of Skyrmion excitations. The new mode having presumably zero energy at odd filling factors emerges at small deviations from odd filling factors and couples to the spin-exciton. The existence of an extra spin mode assumes a nontrivial magnetic order at partial fillings of Landau levels surrounding quantum Hall ferromagnets other then the Skyrmion crystal.
We report ultra-low temperature experiments on the obscure fractional quantum Hall effect (FQHE) at Landau level filling factor $ν$=5/2 in a very high mobility specimen of $μ=1.7 \times 10^7$ cm$^2$/Vs. We achieve an electron temperature as low as $\sim$ 4~mK, where we observe vanishing $R_{xx}$ and, for the first time, a quantized Hall resistance, $R_{xy}=h/(5/2e^2)$ to within 2 ppm. $R_{xy}$ at the neighboring odd-denominator states $ν$=7/3 and 8/3 is also quantized. The temperature dependences of the $R_{xx}$-minima at these fractional fillings yield activation energy gaps $Δ_{5/2}$=0.11K, …
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It cont…
The longitudinal resistances of a six-terminal graphene p-n junction under a perpendicular magnetic field are investigated. Because of the chirality of the Hall edge states, the longitudinal resistances on top and bottom edges of the graphene ribbon are not equal. In the presence of suitable disorder, the top-edge and bottom-edge resistances well show the plateau structures in the both unipolar and bipolar regimes and the plateau values are determined by the Landau filling factors only. These plateau structures are in excellent agreement with the recent experiment. For the unipolar junction, t…
We report on low-temperature transport study of a single layer graphene (SLG)-twisted bilayer graphene (tBLG) junction device. The SLG-tBLG junction in the device is grown by chemical vapor deposition and the device is fabricated in a Hall-bar configuration on Si/SiO$_2$ substrate. The longitudinal resistances across the SLG-tBLG junction (cross-junction resistances) on the two sides of the Hall bar and the Hall resistances of SLG and tBLG in the device are measured. In the quantum Hall regime, the measurements show that the measured cross-junction resistances exhibit a series of new quantized…
In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently…
The residual interaction between composite fermions (CFs) can express itself through higher order fractional Hall effect. With the help of diagonalization in a truncated composite fermion basis of low-energy many-body states, we predict that quantum Hall effect with partial spin polarization is possible at several fractions between $ν=1/3$ and $ν=2/5$. The estimated excitation gaps are approximately two orders of magnitude smaller than the gap at $ν=1/3$, confirming that the inter-CF interaction is extremely weak in higher CF levels.
We present an exact diagonalisation study of bilayer quantum Hall systems at a filling factor of two in the spherical geometry. We find the high-Zeeman-coupling phase boundary of the broken symmetry canted antiferromagnet is given exactly by previous Hartree-Fock mean-field theories, but that the state's stability at weak Zeeman coupling has been qualitatively overestimated. In the absence of interlayer tunneling, degeneracies occur between total spin multiplets due to the Hamiltonian's invariance under independent spin-rotations in top and bottom two-dimensional electron layers.
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer, enclosing an approximately circular island. Front gates deposited in etch trenches allow to fine-tune the device for symmetry and to change the constriction filling, relative to the bulk. The low-field longitudinal and Hall magnetotransport shows Shubnikov-de Haas oscillations and integer quantum Hall plateaus. A systematic variation of front-gate voltage aff…
We consider the edge of a two-dimensional electron system that is in the quantum-Hall-effect regime at filling factor 1-1/m with m being an odd integer, where microscopic theory explaining the occurrence of the quantum Hall effect in the bulk predicts the existence of two counterpropagating edge-excitation modes. These two modes are the classical edge-magnetoplasmon mode and a slow-moving neutral mode. Assuming the electrons to be confined by a coplanar neutralizing background of positive charges, and taking careful account of long-range Coulomb interactions, we determine microscopically the v…
We find that the nuclear-spin polarization has not been treated correctly. The references given are those of wrong papers. The credits assigned for discoveries are also not correct. Incorrect theories have been cited. The reference to the correct theory has been neglected. Because there are lots of good people, so they do not want to give reference to my papers even though they have not solved the problem of quantum Hall effect and we have.
We study the transport properties of a voltage-biased Josephson junction where the BCS superconducting leads are coupled via the edges of a quantum Hall sample. In this scenario, an out of equilibrium Josephson current develops, which is numerically studied within the Floquet-Keldysh Green's function formalism. We particularly focus on the time-averaged current as a function of both the bias voltage and the magnetic flux threading the sample and analyze the resonant multiple Andreev reflection processes that lead to an enhancement of the quasiparticle transmission. We find that a full tomograp…
Fractional quantum Hall states at half-integer filling factors have been observed in many systems beyond the $5/2$ and $7/2$ plateaus in GaAs quantum wells. This includes bilayer states in GaAs, several half-integer plateaus in ZnO-based heterostructures, and quantum Hall liquids in graphene. In all cases, Cooper pairing of composite fermions is believed to explain the plateaus. The nature of Cooper pairing and the topological order on those plateaus are hotly debated. Different orders are believed to be present in different systems. This makes it important to understand experimental signature…
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the cri…
We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. C…
Recent quantum Hall experiments conducted on disordered graphene pn junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums' resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a pn junction. We show that two distinctively separate processes are required for this ballistic-Ohmic plateau transition, namely (i) hole/electron Landau states equilibration and (ii) valley iso-spin dilution of the incident Landau edge state. These conclusions are obtained by a simple s…
Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using confined geometries where the statistics can be tested. We study the transport properties of quantum point contacts (QPCs) fabricated on a GaAs/AlGaAs two dimensional electron gas that exhibits well-developed fractional quantum Hall effect, including at bulk filling fraction 5/2. We find that a plateau at effective QPC filling factor 5/2 is identifiable in point c…
Composite fermions in fractional quantum Hall (FQH) systems are believed to form a Fermi sea of weakly interacting particles at half filling $ν=1/2$. Recently, it was proposed (D. T. Son, Phys. Rev. X 5, 031027 (2015)) that these composite fermions are Dirac particles. In our work, we demonstrate experimentally that composite fermions found in monolayer graphene are Dirac particles at half filling. Our experiments have addressed FQH states in high-mobility, suspended graphene Corbino disks in the vicinity of $ν=1/2$. We find strong temperature dependence of conductivity $σ$ away from half fill…
Recent experiments have shown that electronic Mach-Zehnder interferometers of unprecedented fidelities could be built using a graphene pn junction in the quantum Hall regime. In these junctions, two different edge states corresponding to two different valley configurations are spatially separated and form the two arms of the interferometer. The observed separation, of several tens of nanometers, has been found to be abnormally high and thus associated to unrealistic values of the exchange interaction. In this work, we show that, although the separation is due to exchange interaction, its actua…
