We simulate one-dimensional arrays of tunnel junctions using the kinetic Monte Carlo method to study charge filling behaviour in the large charging energy limit. By applying a small fixed voltage bias and varying the offset voltage, we investigate this behaviour in clean and disordered arrays (both weak and strong disorder effects). The offset voltage dependent modulation of the current is highly sensitive to background charge disorder and exhibits substantial variation depending on the strength of the disorder. We show that while small fractional charge filling factors are likely to be washed out in experimental devices due to strong background charge disorder, larger factors may be observable.
We study the magneto-conductance of a $1.4~\mathrm{μm}$-wide quantum dot in the fractional quantum Hall regime. For a filling factor $\approx 2/3$ and $\gtrsim 1/3$ in the quantum dot the observed Coulomb resonances show a periodic modulation in magnetic field. This indicates a non-trivial reconstruction of the 2/3 fractional quantum Hall state in the quantum dot. We present a model for the charge stability diagram of the system assuming two compressible regions separated by an incompressible stripe of filling factor $2/3$ and $1/3$, respectively. From the dependence of the magnetic field peri…
Anomalous charge tunneling in the fractional quantum Hall edge states at filling factor ν= 5/2
我们解释了最近在$ν=5/2$ [M. Dolev，Y.真恶心Y C. Chung，M. Heiblum，V. Umansky，and D. Mahalu，Phys.Rev. B. \textbf{81}，161303（R）（2010）]。微分电导和过量噪声的实验数据进行拟合，使用反Pfronan模型，通过适当地考虑重整化的Luttinger参数诱导的耦合系统的固有$1/f$噪声。我们表明，一个奇特的凝聚物激发与电荷$e/2$，预期的$e/4$电荷的两倍，占主导地位的低能量下的输运性质。
We report on magnetoconductance measurements through a weakly coupled quantum dot, containing roughly 900 electrons, in a wide magnetic field range from 0 T to 12 T. We find modulations of the conductance resonances in the quantum Hall regime for higher integer filling factors $6> ν_\mathrm{dot} > 2$, in addition to modulations at $2> ν_\mathrm{dot} > 1$ and at fractional filling factors $ν_\mathrm{dot} \gtrsim 2/3$, $1/3$. Depending on the internal filling factor, edge reconstruction inside the quantum dot leads to the formation of multiple concentric compressible regions, which contain discr…
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or anti-parallel spin magnetizations. In the anti-parallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character degrades as long-wavelength spin waves are thermally excited. These tunnel junctions provide a demonstration that the spin polarization of the electrons in the $N=1$ Landau level at filling factors $ν=…
We present a theoretical study of the local optical conductivity, plasmon spectra, and thermoelectric properties of twisted bilayer graphene (TBG) at different filling factors and twist angles $θ$. Our calculations are based on the electronic band structures obtained from a continuum model that has two tunable parameters, $u_0$ and $u_1$, which parametrize the intra-sublattice inter-layer and inter-sublattice inter-layer tunneling rate, respectively. In this Article we focus on two key aspects: i) we study the dependence of our results on the value of $u_0$, exploring the whole range $0\leq u_…
We study the photoassisted shot noise generated by a periodic voltage in the fractional quantum Hall regime. Fluctuations of the current are due to the presence of a quantum point contact operating in the weak backscattering regime. We show how to reconstruct the photoassisted absorption and emission probabilities by varying independently the dc and ac contributions to the voltage drive. This is made possible by the peculiar power-law behavior of the tunneling rates in the chiral Luttinger liquid theory, which allow to approximate the typical infinite sums of the photoassisted transport formal…
Fractional quantum Hall states at half-integer filling factors have been observed in many systems beyond the $5/2$ and $7/2$ plateaus in GaAs quantum wells. This includes bilayer states in GaAs, several half-integer plateaus in ZnO-based heterostructures, and quantum Hall liquids in graphene. In all cases, Cooper pairing of composite fermions is believed to explain the plateaus. The nature of Cooper pairing and the topological order on those plateaus are hotly debated. Different orders are believed to be present in different systems. This makes it important to understand experimental signature…
We report enhanced interlayer tunneling with reduced linewidth at zero interlayer bias in a twist-controlled double monolayer graphene heterostructure in the quantum Hall regime, when the top ($ν_{\mathrm{T}}$) and bottom ($ν_{\mathrm{B}}$) layer filling factors are near $ν_{\mathrm{T}}=\pm1/2, \pm3/2$ and $ν_{\mathrm{B}}=\pm1/2, \pm3/2$, and the total filling factor $ν= \pm1$ or $\pm3$. The zero-bias interlayer conductance peaks are stable against variations of layer filling factor, and signal the emergence of interlayer phase coherence. Our results highlight twist control as a key attribute …
We theoretically study the current-induced spin torque in antiferromagnetic tunnel junctions, composed of two semi-infinite antiferromagnetic layers separated by a tunnel barrier, in both clean and disordered regimes. We find that the torque enabling the electrical manipulation of the Néel antiferromagnetic order parameter is out of plane $\sim {\bf n}\times{\bf p}$, while the torque competing with the antiferromagnetic exchange is in-plane $\sim {\bf n}\times({\bf p}\times{\bf n})$. Here, ${\bf { p}}$ and ${\bf { n}}$ are the Néel order parameter direction of the reference and free layers, re…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current suppression by over $4$ orders of magnitude for a junction bias well below the Al gap $Δ_0 \approx 200\,μ{\rm eV}$. The experimental data are in close agreement with the BCS theoretical expectations of a superconducting tunnel junction. The studied devices combine small-scale tunnel contacts working as thermometers as well as larger electrodes that provide a proof…
