侧向接近的铝隧道结
Laterally proximized aluminum tunnel junctions
摘要：
这封信介绍了一种新技术，使使用高品质的氧化铝隧道势垒与正常的金属电极在低温下制造的结的实验。利用反邻近效应，通过与正常金属电极的干净横向连接来降低铝点的超导电性。为了证明这种方法的有效性，完全正常状态的单电子晶体管（SET）和正常的金属-绝缘体-超导体（NIS）结应用接近铝结制造。的交界处的运输特性是类似的，从标准的理论模型，定期SET和NIS交界处。
英文摘要：
This letter presents experiments on junctions fabricated by a new technique that enables the use of high quality aluminum oxide tunnel barriers with normal metal electrodes at low temperatures. Inverse proximity effect is applied to diminish the superconductivity of an aluminum dot through a clean lateral connection to a normal metal electrode. To demonstrate the effectiveness of this method, fully normal-state single electron transistors (SET) and normal metal-insulator-superconductor (NIS) junctions applying proximized Al junctions were fabricated. The transport characteristics of the junctions were similar to those obtained from standard theoretical models of regular SETs and NIS junctions.
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