Energy spectrum of fractional quantum Hall (FQH) states is composed of single electron energy (Landau energy) neglecting the Coulomb interactions between electrons, classical Coulomb energy and the quantum energy via quantum transitions. Herein, the sum of the Landau energy and the classical Coulomb energy depends upon the value of the filling factor continuously. However, the quantum transition energy discontinuously depends upon the value of the filling factor. This discontinuity yields energy gaps in many stable FQH states. The energy gaps for specific filling factors produce the precise confinement of Hall resistance.
A new experiment is considered as follows; the magnetic strength is fixed to the value to confine the Hall resistance at the filling factor of 2/3 as an example. Moreover the magnetic modulation with frequency f is applied to the system. The frequency dependence of the diagonal resistance is measured. Then, it is shown in this paper that the diagonal resistance varies drastically at some frequency value f0. We clarify the following relation between this value f0 and the magnetic strength width dB of Hall plateaus as f0 = e dB / (4 Pi m), where -e is the charge of electron, Pi =3.141592, and m is the mass of electron.
We have observed quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy. Peaks in R_xx occur at different positions in positive and negative magnetic fields. Practically all R_xx features can be explained quantitatively by a ~1%/cm electron density gradient. Therefore, R_xx is determined by R_xy and unrelated to the diagonal resistivity rho_xx. Our findings throw an unexpected light on the empirical resistivity rule for 2D systems…
We study the microwave-induced photoconductivity of a two-dimensional electron system (2DES) in the presence of a magnetic field and a two-dimensional modulation. The microwave and Landau contributions are exactly taken into account, while the periodic potential is treated perturbatively. The longitudinal resistivity exhibits oscillations, periodic in $ω/ ω_c$. Negative resistance states (NRS) develop for sufficiently high electron mobility and microwave power. This phenomenon appears in a narrow window region of values of the lattice parameter ($a$), around $a \sim l_B$, where $l_B$ is the ma…
An experimental study of the high mobility GaAs/AlGaAs system at large-$ν$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have found weak deviations (about 6-20 %) of the Hall voltage from its classical value. The deviations do not correlate with the strong temperature dependence of the diagonal resistivity rho_{xx}(T). The smallest deviation in R_{xy} was found in the highest mobility sample exhibiting the largest variation in the diagonal resistivity ρ_{xx} with temperature (by a fac…
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches the screening length. Electric field dependent Landau level formation is detected from Shubnikov de Haas oscillations in magneto-resistance. The effective mass of electron and hole carriers has been measured from the temperature dependant behavior of these oscillations.
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $ν$. At large-$ν$, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal- and Hall- resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal- and Hall resistance- oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "ant…
Evidence for spin swapping from modulation of transverse resistance in magnetic heterostructures with Rashba interface
Institute for Solid State Physics, University of Tokyo（东京大学固体物理研究所）；Universidad del Pais Vasco UPV/EHU（巴斯克地区大学）；Center for Emergent Matter Science, RIKEN（理化学研究所新兴物质科学中心）
We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.
Symmetric, off-diagonal, resistance from rotational symmetry breaking in graphene-WSe$_2$ heterostructure: prediction for a large magic angle in a Moire system
Effect of dc electric field on transport of highly mobile 2D electrons is studied in wide GaAs single quantum wells placed in titled magnetic fields. The study shows that in perpendicular magnetic field resistance oscillates due to electric field induced Landau-Zener transitions between quantum levels that corresponds to geometric resonances between cyclotron orbits and periodic modulation of electron density of states. Magnetic field tilt inverts these oscillations. Surprisingly the strongest inverted oscillations are observed at a tilt corresponding to nearly absent modulation of the electro…
State Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University（北京航空航天大学杭州创新研究院自旋电子学国家重点实验室）；Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University（北京航空航天大学集成电路科学与工程学院法伯北京研究所）；CNRS, Institute Jean Lamour, Université de Lorraine（洛林大学让·拉缪尔研究所法国国家科学研究中心）
We address the origin of the residual resistance observed in microwave irradiated two-dimensional electron gases in a weak magnetic field. We study charge modulations arising from negative photo-conductivity and show that dissipative currents are exponentially suppressed. Relating the exponent to the temperature dependence of microscopic parameters taken from experiment, we find pseudo activated behaviour. In order to obtain these results it is essential to take into account the finite range of the Coulomb interaction.
We report the observation of an even-denominator fractional quantum Hall (FQH) state at $ν=1/4$ in a high quality, wide GaAs quantum well. The sample has a quantum well width of 50 nm and an electron density of $n_e=2.55\times10^{11}$ cm$^{-2}$. We have performed transport measurements at $T\sim35$ mK in magnetic fields up to 45 T. When the sample is perpendicular to the applied magnetic field, the diagonal resistance displays a kink at $ν=1/4$. Upon tilting the sample to an angle of $θ=20.3^o$ a clear FQH state at emerges at $ν=1/4$ with a plateau in the Hall resistance and a strong minimum i…
Recently discovered modulations of Shubnikov-de Haas oscillations in microwave-irradiated two-dimensional electron systems are shown to arise from electron heating induced by the radiation. The electron temperature, obtained by balancing the energy absorption from the microwave field and the energy dissipation to the lattice through realistic electron-phonon couplings, exhibits resonance. The modulation of the Shubnikov de Haas oscillation and the suppression of magnetoresistance are demonstrated together with microwave-induced resistance oscillation, in agreement with experimental findings.
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $ν=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity i…
A contribution of the electron-phonon interaction into the energy of a unidirectional charge ordered state (stripe phase) of two-dimensional electrons in GaAs heterostructures is analyzed. The dependence of the energy on the direction of the electron density modulation is calculated. It is shown that in electrons layers situated close to the (001) surface the interference between the piezoelectric and the deformation potential interaction causes a preferential orientation of the stripes along the [110] axis.
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking- property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic electronic state is not yet fully understood since it is rarely encountered in experiment. The microwave-radiation-induced zero-resistance state in the high mobility GaAs/AlGaAs 2D electron system is believed to be an example where negative magneto-conductivity/resistivity is responsible for the observed phenomena. Here, we examine the magneto-transport characteristics of this negative cond…
We propose a current-in-plane spin-valve field-effect transistor (CIP-SV-FET), which is composed of a ferromagnet / nonferromagnet / ferromagnet trilayer structure and a gate electrode. This is a promising device alternative to spin metal-oxide-semiconductor field-effect transistors. Here, we fabricate a ferromagnetic-semiconductor GaMnAs-based CIP-SV-FET and demonstrate its basic operation of the resistance modulation both by the magnetization configuration and by the gate electric field. Furthermore, we present the electric-field-assisted magnetization reversal in this device.
We present fully quantum-mechanical magnetotransport calculations for short-period lateral superlattices with one-dimensional electrostatic modulation. A non-perturbative treatment of both magnetic field and modulation potential proves to be necessary to reproduce novel quantum oscillations in the magnetoresistance found in recent experiments in the resistance component parallel to the modulation potential. In addition, we predict oscillations of opposite phase in the component perpendicular to the modulation not yet observed experimentally. We show that the new oscillations originate from the…
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-doping, but silicon dopant atoms are retained in the ohmic contact region to facilitate reliable low-resistance contacts. A high quality two-dimensional electron gas i…
Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-terminal studies [J. R. Williams \textit{et al.}, Science {\bf 317}, 638 (2007); B. Özyilmaz \textit{et al.}, Phys. Rev. Lett. {\bf 99}, 166804 (2007)], asymmetric QH resistances are observed, which provide information on reflection as well as transmission of the QH edge states. Most quantized values of resistances are well analyzed by the assumption that all edge states are equally populated. Contrary to the expectat…
We present a method to probe real-time dynamics in quantum mesoscopic systems using Ramsey interferometry. This allows us to explore the effect of interactions on quasi-particles in the time domain. We investigate the dephasing effects of an ohmic environment on an electron-hole pair in a tunnel junction. We show that dynamical Coulomb blockade phenomena can be observed for resistances much smaller than the quantum of resistance. Moreover, the crossover between high and low impedance limits can be probed for a constant resistance by a proper control of the voltage modulation.
We report on a theoretical work on magnetotransport under terahertz radiation with high mobility two-dimensional electron systems. We focus on the interaction between the obtained radiation-induced magnetoresistance oscillations (RIRO) and the Shubnikov-de Haas (SdHO) oscillations. We study two effects experimentally obtained with this radiation. First, the observed disappearance of the SdHO oscillations simultaneously with the vanishing resistance at the zero resistance states region. And secondly the strong modulation of the SdHO oscillations at sufficient terahertz radiation power. We concl…
We theoretically analyzed the microwave-induced modification of the Hall magnetoresistivity in high mobility two-dimensional electron systems. These systems present diagonal magnetoresistivity oscillations and zero-resistance states when are subjected to microwave radiation. The most surprising modification of the Hall magnetoresistivity is a periodic reduction which correlates with a periodic increase in the diagonal resistivity. We present a model that explains the experimental results considering that radiation affects directly only the diagonal resistivity and the observed Hall resistivity…
A comprehensive understanding of quantum Hall edge transmission, especially the hole-conjugate of a Laughlin state such as a $2/3$ state, is critical for advancing fundamental quantum Hall physics and enhancing the design of quantum Hall edge interferometry. In this study, we report a robust intermediate $2h/e^2$ resistance quantization in a quantum point contact (QPC) when the bulk is set at the fractional filling $2/3$ quantum Hall state. Our results suggest the occurrence of two equilibration processes. First, the co-propagating $1/3$ edges moving along a soft QPC arm confining potential fu…
Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $\mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetoresistivity in the direction perpendicular to the magnetic modulation shows pronounced classical resonances. They are located at magnetic fields where snake trajectories exist which are quasi-commensur…
We study spin transport in lateral spin valves with constricted channels. Using electromigration, we modulate the spin accumulation by continuously varying the width of the non-magnetic channel at a single location. By fitting the non-local spin signal data as a function of the non-magnetic channel resistance, we extract all the relevant parameters regarding spin transport from a single device. Simulations show that constricting the channel blocks the diffusion of the accumulated spins rather than causing spin flipping. This result could be used to improve the design of future spintronic devic…
The magneto- and Hall resistance of a locally gated cross shaped graphene Hall bar is calculated. The edge of the top gate is placed diagonally across the center of the Hall cross. Four-probe resistance is calculated using the Landauer-Büttiker formalism, while the transmission coefficients are obtained using the non-equilibrium Green's function approach. The interplay between transport due to edge channels and snake states is investigated. When two edge channels are occupied we predict oscillations in the Hall and the bend resistance as function of the magnetic field which are a consequence o…
Hall and diagonal resistances of bilayer fractional quantum Hall systems are discussed theoretically. The bilayers have electrodes attached separately to each layer. They are assumed to be coupled weakly by interlayer tunneling, while the interlayer Coulomb interaction is negligibly small. It is shown that source-drain voltage dependence of the resistances reflects the Luttinger liquid parameter of the edge state.
By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.
We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease of the tunneling magnetoresistance (TMR) ratio. The coercivities of the free and fixed layer of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. Thi…
We propose and demonstrate spin manipulation by magnetically controlled modulation of pure spin currents in cobalt/copper lateral spin valves, fabricated on top of the magnetic insulator Y$_3$Fe$_5$O$_{12}$ (YIG). The direction of the YIG magnetization can be controlled by a small magnetic field. We observe a clear modulation of the non-local resistance as a function of the orientation of the YIG magnetization with respect to the polarization of the spin current. Such a modulation can only be explained by assuming a finite spin-mixing conductance at the Cu/YIG interface, as it follows from the…
Electronic correlations control the normal state of bulk high-Tc cuprates. Strong correlations also suppress the charge transport through cuprate grain boundaries (GBs). The question then arises if these correlations can produce magnetic states at cuprate GBs. We analyze the formation of local magnetic moments at the GB of a correlated two-dimensional electron systems which is represented by an inhomogeneous Hubbard model. The model Hamiltonian is diagonalized after the implementation of a mean-field decoupling. The formation of local magnetic moments is supported by a sufficiently strong vari…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO$_{3}$/SrTiO$_{3}$ heterostructure, which exhibits both high electron mobility exceeding 10000 cm$^{2}$/Vs and low carrier density on the or…
The dc magnetoconductivity of the multisubband two-dimensional electron system formed on the liquid helium surface in the presence of resonant microwave irradiation is described, and a new mechanism of the negative linear response conductivity is studied using the self-consistent Born approximation. Two kinds of scatterers (vapor atoms and capillary wave quanta) are considered. Besides a conductivity modulation expected near the points, where the excitation frequency for inter-subband transitions is commensurate with the cyclotron frequency, a sign-changing correction to the linear conductivit…
Recently an air-stable layered semiconductor Bi2O2Se was discovered to exhibit an ultrahigh mobility in transistors fabricated with its thin layers. In this work, we explored the mechanism that induces the high mobility and distinguishes Bi2O2Se from other semiconductors. We found that the electron donor states lie above the lowest conduction band. Thus, electrons get spontaneously ionized from donor sites (e.g., Se vacancies) without involving the thermal activation, different from the donor ionization in conventional semiconductors. Consequently, the resistance decreases as reducing the temp…
By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n_2D as high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relative variations in the film resistance, DeltaR/R', up to 10% at low temperature. DeltaR/R' is a linear function of n_2D - as expected within a free-electron model - if the film is thick enough (> 25 nm), otherwise a tendency to saturation due to size effects is observed. The application of this technique to 2D materials will allow extending the field-effect experiments to a …
We study the effect of spatially modulated magnetic fields on the energy spectrum of a two-dimensional (2D) Bloch electron. Taking into account four kinds of modulated fields and using the method of direct diagonalization of the Hamiltonian matrix, we calculate energy spectra with varying system parameters (i.e., the kind of the modulation, the relative strength of the modulated field to the uniform background field, and the period of the modulation) to elucidate that the energy band structure sensitively depends on such parameters: Inclusion of spatially modulated fields into a uniform field …
Motivated by the recently discovered microwave-induced ``zero-resistance'' states in two-dimensional electron systems, we study the microwave photoconductivity of a two-dimensional electron gas (2DEG) subject to a unidirectional static periodic potential. The combination of this potential, the classically strong magnetic field, and the microwave radiation may result in an anisotropic negative conductivity of the 2DEG. Similar to the case of a smooth random potential, two mechanisms contribute to the negative photoconductivity. The displacement mechanism arises from electron transitions due to …
The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge, determined by a suitable modification of a classic method of electrochemistry called double-step chronocoulometry, reached some units in 10^15 charges/cm^2. At room temperature, relative variations of resistance up to 8%, 1.9% and 1.6% were observed in the case of gold, silver and copper, respectively and, if the films are thick enough (> 25 nm), results can be…
Low temperature growth Pr0.7Ca0.3MnO3 (PCMO) thin film showed high performance in electric field induced resistance switching (RS). To understand the micro-mechanism of RS in Metal/PCMO/Metal devices, structure evolution of PCMO under external electric field monitored inside transmission electron microscope (TEM) were performed. Evolution of the modulation stripe in as-grown PCMO sample was investigated when applying electric field. The new-generated modulation stripe gradually disappeared. These results indicate that oxygen ion migration plays a key role in RS.
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance …
We report on magnetotransport of a two-dimensional electron system (2DES), located 32 nm below the surface, with a surface superlattice gate structure of periodicity 39 nm imposing a periodic modulation of its potential. For low Landau level fillings $ν$, the diagonal resistivity displays a rich pattern of fluctuations, even though the disorder dominates over the periodic modulation. Theoretical arguments based on the combined effects of the long-wavelength, strong disorder and the short-wavelength, weak periodic modulation present in the 2DES qualitatively explain the data.
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realisation of up to two arsenic implantation steps in combination…
We report on experiments allowing to set an upper limit on the magnitude of the spin Hall effect and the conductance by edge channels in quantum wells of PbTe embedded between PbEuTe barriers. We reexamine previous data obtained for epitaxial microstructures of n-type PbSe and PbTe, in which pronounced nonlocal effects and reproducible magnetoresistance oscillations were found. Here we show that these effects are brought about by a quasi-periodic network of threading dislocations adjacent to the BaF$_2$ substrate, which give rise to a p-type interfacial layer and an associated parasitic parall…
We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude, and consistent with this result the resistance at fixed phase is an oscillating function of the RF amplitude. The results are explained qualitatively as a consequence of two processes. The first is the…
We experimentally study the influence of 1-40 GHz radiation on the resistance of normal (N) mesoscopic conductors coupled to superconducting (S) loops (Andreev interferometers). At low RF amplitudes we observe the usual h/2e superconducting-phase-periodic resistance oscillations as a function of applied magnetic flux. We find that the oscillations acquire a pi-shift with increasing RF amplitude, and consistent with this result the resistance at fixed phase is an oscillating function of the RF amplitude. The results are explained qualitatively as a consequence of two processes. The first is the…
The atomic structure at the interface between two-dimensional (2D) and three-dimensional (3D) materials influences properties such as contact resistance, photo-response, and high-frequency electrical performance. Moiré engineering is yet to be utilized for tailoring this 2D/3D interface, despite its success in enabling correlated physics at 2D/2D interfaces. Using epitaxially aligned MoS2/Au{111} as a model system, we demonstrate the use of advanced scanning transmission electron microscopy (STEM) combined with a geometric convolution technique in imaging the crystallographic 32 A moiré patter…
We present experimental results on the quantized Hall insulator in two dimensions. This insulator, with vanishing conductivities, is characterized by the quantization (within experimental accuracy) of the Hall resistance in units of the quantum unit of resistance, h/e^2. The measurements were performed in a two dimensional hole system, confined in a Ge/SiGe quantum well, when the magnetic field is increased above the nu=1 quantum Hall state. This quantization leads to a nearly perfect semi-circle relation for the diagonal and Hall conductivities. Similar results are obtained with a higher mobi…
We numerically study the quantum phase transitions and the stability of Majorana zero modes in a generalized Kitaev model in one dimension when the chemical potential is periodically modulating in space. By using the exact diagonalization method for open boundary condition, we investigate the ground-state phases in terms of the non-local properties such as the entanglement spectrum (ES) and the string correlation functions. When we vary the phase of the modulation, the number of the Majorana zero modes changes, which manifests itself in the degeneracy of the lowest level of the ES. Next, we st…
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were n-type before the annealing. Surprisingly the anomalous Hall effect resistance in paramagnetic state (T>40 K) and in strong magnetic fields (B > 20 T) appears to be greater than that in ferromagnetic state (T <= 40 K), while the longitudinal resistance rises with the temperature decrease. The negative magnetoresistance saturates in magnetic fields higher th…
