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arXiv 0906.0032cond-mat.mes-hall
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微波辐照和暗态GaAs/AlGaAs器件中振荡电阻的相位研究：一类新的积分量子霍尔效应的指示

Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

R. G. Mani, W. B. Johnson, V. Umansky, V. Narayanamurti, K. Ploog

备注：
11 pages, 12 color figures
发表信息：
Phys. Rev. B 79, 205320 (2009)
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摘要：

本文报道了高迁移率GaAs/AlGaAs系统在大填充因子$ν$下的暗态研究和光激发研究的实验结果。在大$ν$中，暗研究表明振荡对角电阻和霍尔电阻之间的几种不同的相位关系（“类型-1”、“类型-2”和“类型-3”），因为典型积分量子霍尔效应（IQHE）表现在近似正交对角电阻和霍尔电阻振荡的“类型-1”情况下。令人惊讶的是，调查表明量子霍尔平台也在“类型-3”的情况下，其特征在于近似“反相”霍尔和对角电阻振荡，这表明一类新的IQHE。微波光激发下的传输研究表现出辐射诱导的磁阻振荡的对角线，$R_{xx}$，和非对角线，$R_{xy}$，电阻。此外，当辐射诱导的磁阻振荡扩展到量子霍尔区时，在$R_{xx}$ \textit{vs}中的Shubnikov-de Haas（SdH）振荡的幅度中发生辐射诱导的非单调变化。B，以及$R_{xy}$中量子霍尔平台宽度的非单调变化。后一种效应导致IQHE在辐射诱导的$R_{xx}$振荡的最小值处随着光激发的增加而消失。我们的理由是，该机制是负责生产的非单调变化的振幅在$R_{xx}$在光激发下的SdH振荡也是负责消除，在光激发下，新的“3型”IQHE在高迁移率的标本。

英文摘要：

We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $ν$. At large-$ν$, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and "Type-3") between the oscillatory diagonal- and Hall- resistances, as the canonical Integral Quantum Hall Effect (IQHE) is manifested in the "Type-1" case of approximately orthogonal diagonal- and Hall resistance- oscillations. Surprisingly, the investigation indicates quantum Hall plateaus also in the "Type-3" case characterized by approximately "anti-phase" Hall- and diagonal- resistance oscillations, suggesting a new class of IQHE. Transport studies under microwave photo-excitation exhibit radiation-induced magneto-resistance oscillations in both the diagonal, $R_{xx}$, and off-diagonal, $R_{xy}$, resistances. Further, when the radiation-induced magneto-resistance oscillations extend into the quantum Hall regime, there occurs a radiation-induced non-monotonic variation in the amplitude of Shubnikov-de Haas (SdH) oscillations in $R_{xx}$ \textit{vs}. B, and a non-monotonic variation in the width of the quantum Hall plateaus in $R_{xy}$. The latter effect leads into the vanishing of IQHE at the minima of the radiation-induced $R_{xx}$ oscillations with increased photo-excitation. We reason that the mechanism which is responsible for producing the non-monotonic variation in the amplitude of SdH oscillations in $R_{xx}$ under photo-excitation is also responsible for eliminating, under photo-excitation, the novel "Type-3" IQHE in the high mobility specimen.

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