The four-level exciton/biexciton system of a single semiconductor quantum dot acts as a two qubit register. We experimentally demonstrate an exciton-biexciton Rabi rotation conditional on the initial exciton spin in a single InGaAs/GaAs dot. This forms the basis of an optically gated two-qubit controlled-rotation (CROT) quantum logic operation where an arbitrary exciton spin is selected as the target qubit using the polarization of the control laser.
Self-assembled quantum dots have remarkable optical, electronic and spintronic properties that make them leading candidates for quantum information technologies. Their characterization requires rapid and local determination of both charge and spin degrees of freedom. We present a way to probe the capacitance of small ensembles of quantum dots at microwave frequencies. The technique employs a capacitance sensor based on a microwave microstrip resonator with sensitivity ~10^(-19) F/rt(Hz), high enough to probe single electrons. The integration of this design in a scanning microscope will provide…
We measure the dynamics of nuclear spins in a self-assembled quantum dot at a magnetic field of 5 Tesla and identify two distinct mechanisms responsible for the decay of the Overhauser field. We attribute a temperature-independent decay which lasts ~100 seconds to intra-dot diffusion induced by hyperfine-mediated indirect nuclear spin interaction. In addition, we observe a gate-voltage and temperature dependent decay stemming from co-tunneling mediated nuclear spin flip processes. By adjusting the gate-voltage and lowering the electron temperature to ~200 milliKelvin, we prolong the correspond…
Measuring single-electron charge is one of the most fundamental quantum technologies. Charge sensing, which is an ingredient for the measurement of single spins or single photons, has been already developed for semiconductor gate-defined quantum dots, leading to intensive studies on the physics and the applications of single-electron charge, single-electron spin and photon-electron quantum interface. However, the technology has not yet been realized for self-assembled quantum dots despite their fascinating quantum transport phenomena and outstanding optical functionalities. In this paper, we r…
We investigate how the strain-induced nuclear quadrupole interaction influences the degree of nuclear spin polarization in self-assembled quantum dots. Our calculation shows that the achievable nuclear spin polarization in In_{x}Ga_{1-x}As quantum dots is related to the concentration of indium and the resulting strain distribution in the dots. The interplay between the nuclear quadrupole interaction and Zeeman splitting leads to interesting features in the magnetic field dependence of the nuclear spin polarization. Our results are in qualitative agreement with measured nuclear spin polarizatio…
We present a theoretical analysis of the phonon-assisted relaxation in a system composed of two self-assembled vertically stacked quantum dots. We construct realistic model, which takes into account the geometry and strain distribution in the system. We calculate phonon-assisted relaxation rates between the two lowest states (in one- and two-electron cases). The relaxation rates and energy levels are studied as a function of external (axial) electric field and geometry of the structure (dot sizes). We show that the relaxation times can be as low as 1~ps but efficent relaxation occurs only for …
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement we extract the strength of the confinement potential of quantum dots.
Electron spin qubit coherence in quantum dots is ultimately limited by random nuclear spin bath fluctuations. Here we aim to eliminate this randomness by making spin bath evolution deterministic. We introduce spin bath control sequences, which systematically combine Hahn and solid echoes to suppress inhomogeneous broadening and nuclear-nuclear interactions. Experiments on self-assembled quantum dots show a five-fold increase in nuclear spin coherence. Numerical simulations show that these sequences can be used to suppress decoherence via qubit-qubit interaction in point defect and dopant spin …
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin relaxation is spin admixture induced by symmetry-breaking shear strain, which can be mapped onto two effective spin-phonon terms in a conduction band (effective mass) Hamiltonian that have a similar structure and interfere constructively. Unlike the Dresselhaus coupling that dominates spin relaxation in larger, unstrained dots, the shear strain contribution cannot …
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum dots is calculated using multiband real-space envelope-function theory. The dependence of the Lande' g tensor on electric fields should permit high-frequency g tensor modulation resonance, as well as direct, nonresonant electric-field control of the hole spin. Subharmonic resonances have also been found in g tensor modulation resonance of the holes, due to the strong quadratic dependence of components of the hole g tensor on the electric field.
We present photoluminescence studies of highly excited single self--assembled CdTe quantum dots under continuous--wave and pulsed excitations. We observe appearance of emission bands related to sequential filling of s--, p-- and d--shells. We analyze the inter-shell splitting for five samples, in which the dots were formed from a strained CdTe layer of different width. We find that with increasing the CdTe layer width the inter-shell splitting increases. In a time resolved measurement, we observe a radiative cascade between transitions involving one, two, and more than two excitons.
In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the 8-band $kp$ model and calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture- and direct spin-phonon mechanisms giving rise to the transition rates. We show that the biaxial and shear strain constitute dominant spin-admixture coupling mechanisms. Then, we demonstrate that hole spin lifetime can be increased if a quantum dot is covered by a strain-reducing la…
We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire new future quantum information devices which can link optical, spin, and superconducting…
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
We demonstrate how the controlled positioning of a plasmonic nanoparticle modifies the photoluminescence of a single epitaxial GaAs quantum dot. The antenna particle leads to an increase of the luminescence intensity by about a factor of eight. Spectrally and temporally resolved photoluminescence measurements prove an increase of the quantum dot's excitation rate. The combination of stable epitaxial quantum emitters and plasmonic nanostructures promises to be highly beneficial for nanoscience and quantum optics.
Three-dimensional anisotropy of the Lande g-factor and its electrical modulation are studied for single uncapped InAs self-assembled quantum dots (QDs). The g-factor is evaluated from measurement of inelastic cotunneling via Zeeman substates in the QD for various magnetic field directions. We find that the value and anisotropy of the g-factor depends on the type of orbital state which arises from the three-dimensional confinement anisotropy of the QD potential. Furthermore, the g-factor and its anisotropy are electrically tuned by a side-gate which modulates the confining potential.
We study theoretically phonon-assisted relaxation processes in a system consisting of one or two electrons confined in two vertically stacked self-assembled quantum dots. The calculation is based on a k.p approximation for single particle wave functions in a strained self-assembled structure. From these, two-particle states are calculated by including the Coulomb interaction and the transition rates between the lowest energy eigenstates are derived. We take into account phonon couplings via deformation potential and piezoelectric interaction and show that they both can play a dominant role in …
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels as a function of the electric and magnetic fields. The simulations are based on a model combining the eight-band k.p method and configuration-interaction approach. We show that the electron g-factor mismatch between the Zeeman doublets localized on different dots opens a relatively fast triplet-s…
We use an atomistic model to consider the effect of shape symmetry breaking on the optical properties of self-assembled InAs/GaAs quantum dots. In particular, we investigate the energy level structure and optical activity of the lowest energy excitons in these nanostructures. We compare between quantum dots with two-fold rotational and two reflections (C2v) symmetry and quantum dots in which this symmetry was reduced to one reflection only (Cs) by introducing a facet between the quantum dots and the host material. We show that the symmetry reduction mostly affects the optical activity of the d…
The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines for a range of InGaAs/GaAs self-assembled quantum dots and use a tight-binding model with a configuration interaction approach to explain their appearance. Introducing a composition fluctuation cluste…
The response of a single InGaAs quantum dot, embedded in a miniaturized charge-tunable device, to an applied GHz bandwidth electrical pulse is investigated via its optical response. Quantum dot response times of 1.0 \pm 0.1 ns are characterized via several different measurement techniques, demonstrating GHz bandwidth electrical control. Furthermore a novel optical detection technique based on resonant electron-hole pair generation in the hybridization region is used to map fully the voltage pulse experienced by the quantum dot, showing in this case a simple exponential rise.
Self-assembled InAs quantum dots (QDs) are of great interest as components of optoelectronic devices that can operate at the quantum limit. The charge configuration, interdot coupling, and symmetry of complexes containing multiple QDs can all be tuned with applied electric fields, but the magnitude and angle of the electric field required to control each of these parameters depends on the orientation of the QD complex. We present a 4-electrode device compatible with optical excitation and emission that allows application of electric fields with arbitrary magnitudes and angles relative to isola…
I present a systematic study of self-assembled InAs/InP and InAs/GaAs quantum dots single particle and many body properties as a function of quantum dot-surrounding matrix valence band offset. I use an atomistic, empirical tight-binding approach and perform numerically demanding calculations for half-million atom nanosystems. I demonstrate that the overall confinement in quantum dots is a nontrivial interplay of two key factors: strain effects and the valence band offset. I show that strain effects determine both the peculiar structure of confined hole states of lens type InAs/GaAs quantum dot…
Anisotropy of spin-orbit interaction (SOI) is studied for a single uncapped InAs self-assembled quantum dot (SAQD) holding just a few electrons. The SOI energy is evaluated from anti-crossing or SOI induced hybridization between the ground and excited states with opposite spins. The magnetic angular dependence of the SOI energy falls on an absolute cosine function for azimuthal rotation, and a cosine-like function for tilting rotation. The SOI energy is even quenched at a specific rotation. These angular dependence compare well to calculation of Rashba SOI in a two-dimensional harmonic potenti…
We investigate the thermal quenching of the multimodal photoluminescence from InAs/InP (001) self-assembled quantum dots. The temperature evolution of the photoluminescence spectra of two samples is followed from 10 K to 300 K. We develop a coupled rate-equation model that includes the effect of carrier thermal escape from a quantum dot to the wetting layer and to the InP matrix, followed by transport, recapture or non-radiative recombination. Our model reproduces the temperature dependence of the emission of each family of quantum dots with a single set of parameters. We find that the main es…
We demonstrate evidence for a radiative recombination channel of dark excitons in self-assembled quantum dots. This channel is due to a light hole admixture in the excitonic ground state. Its presence was experimentally confirmed by a direct observation of the dark exciton photoluminescence from a cleaved edge of the sample. The polarization resolved measurements revealed that a photon created from the dark exciton recombination is emitted only in the direction perpendicular to the growth axis. Strong correlation between the dark exciton lifetime and the in-plane hole g-factor enabled us to sh…
We show here the existence of the indirect coupling of electron and magnetic or nuclear ion spins in self-assembled quantum dots mediated by electron-electron interactions. With a single localized spin placed in the center of the dot, only the spins of electrons occupying the zero angular momentum states couple directly to the localized spin. We show that when the electron-electron interactions are included, the electrons occupying finite angular momentum orbitals interact with the localized spin. This effective interaction is obtained using exact diagonalization of the microscopic Hamiltonian…
The contribution to the biexciton binding energy in quantum dots resulting from the interaction with longitudinal optical phonons is estimated by performing the configuration--interaction calculation of the few-particle states in a simple model of the confining potential and including the phonon corrections by means of a perturbation theory. It is found that the polaron contribution tends to compensate the Coulomb-related biexciton shift (binding energy) and reduces its value by several to even 30%, depending on the material parameters of the system.
We study the second-order polaronic resonance between 2-LO-phonon states and p-shell electron states in a quantum dot. We show that the spectrum in the resonance area can be quantitatively reproduced by a theoretical model using only standard material constants, without any free parameters. We propose also a perturbative approach to the problem based on a quasi-degenerate perturbation theory. This method not only considerably reduces the numerical complexity without considerable loss of accuracy but also gives some insight into the structure and origin of the resonance spectrum.
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the preliminary formation of the Ga droplets. This results in an ensemble photoluminescence linewidth of 19 meV at 14 K. The narrow emission band and the absence of a wetting layer promoting dot-dot coupling all…
We introduce an all-electrical measurement technique, which makes it possible to prepare and detect the ground and excited many-particle states in self-assembled InAs QDs at 4K. This way, the pure-electron spectra of QD-hydrogen, -helium and -lithium are resolved. Comparison with detailed many-body calculations enables us to identify the different charge configurations and in particular detect the singlet and triplet spin states of QD helium. Furthermore, the time-resolved evolution of the density of states from non-equilibrium to equilibrium charge occupation is shown.
We study the leakage dynamics of charge stored in an ensemble of CdTe quantum dots embedded in a field-effect structure. Optically excited electrons are stored and read out by a proper time sequence of bias pulses. We monitor the dynamics of electron loss and find that the rate of the leakage is strongly dependent on time, which we attribute to an optically generated electric field related to the stored charge. A rate equation model quantitatively reproduces the results.
In this work I investigate the influence of spin-orbit coupling on the magnetic field dependence of carrier states in a self-assembled quantum dot. I calculate the hole energy levels using the 6, 8 and 14 band k.p model. Through a detailed study within these models, I extract the information about the impact of various spin-orbital coupling channels in the hole p-shell. I also show that complicated magnetic field dependence of the hole p-shell resulting from numerical simulations, can be very well fitted using a phenomenological model. I compare the electron and hole g-factors calculated withi…
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical anisotropy with non-orthogonal linearly polarized states misaligned with respect to the crystallographic axes. Owing to a waveguiding experimental configuration, luminescence polarization along the growth axis has been observed revealing the presence of shear components of the deformation tensor out of the growth plane. Resonant luminescence experiments allowed deter…
We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,μ\text{eV}$, just a factor of two above the transform l…
Time-resolved resonance fluorescence (RF) is used to analyse electron tunneling between a single self-assembled quantum dot (QD) and an electron reservoir. In equilibrium, the RF intensity reflects the average electron occupation of the QD and exhibits a gate voltage dependence that is given by the Fermi distribution in the reservoir. In the time-resolved signal, however, we find that the relaxation rate for electron tunneling is independent of the occupation in the charge reservoir. Using a master equation approach which includes both the electron tunneling and the optical excitation/recombin…
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are compared to theoretical calculations of the relative energies of exciton and biexciton. Cascaded decay from the manifold of single exciton-biexciton states has been predicted to be a new concept to generate entangled photon pairs on demand without the need to suppress the fine structures splitting of the neutral exciton.
We studied the formation mechanism of the in-plane nuclear field in single self-assembled In$_{0.75}$Al$_{0.25}$As/Al$_{0.3}$Ga$_{0.7}$As quantum dots. The Hanle curves with an anomalously large width and hysteretic behavior at the critical transverse magnetic field were observed in many single quantum dots grown in the same QD sample. In order to explain the anomalies in the Hanle curve indicating the formation of a large nuclear field perpendicular to the photo-injected electron spin polarization, we propose a new model based on the current phenomenological model for dynamic nuclear spin pol…
We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external magnetic field. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown within the ultra high vacuum conditions of molecular beam epitaxy to voltage-tune the device, while a two dimensional electron gas (2DEG) serves as back contact. Spacings of the hole sublevels are indirectly calculated using the photoluminescence spectroscopy alo…
We theoretically study the optical properties of an InAs/GaAs quantum dot (QD) near the area of the second-order resonance between an electron confined in the QD and two longitudinal optical phonons. We present the absorption spectra of an inhomogeneously broadened QD ensemble and show that the minimal model needed for an accurate description of such a system needs to account for 3-phonon states. We study also the influence of the QD height to width ratio on the optical properties of the polaron system. The dependence of the width of the resonance and the position of the second-order resonant …
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad range exceeding 14 meV. Furthermore, this opto-mechanical interaction enables the dynamical tuning of two neighboring QDs into resonance, possibly allowing for emitter-emitter coupling. Both the QDs and the coupling mechanism -- material strain -- are intrinsic to the NW structure and do not depend on any functionalization or external field. Such systems open …
Quantum dots are arguably one of the best platforms for optically accessible spin based qubits. The paramount demand of extended qubit storage time can be met by using quantum-dot-confined dark exciton: a longlived electron-hole pair with parallel spins. Despite its name the dark exciton reveals weak luminescence that can be directly measured. The origins of this optical activity remain largely unexplored. In this work, using the atomistic tight-binding method combined with configuration-interaction approach, we demonstrate that atomic-scale randomness strongly affects oscillator strength of d…
