Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode
Matthias C. Löbl, Immo Söllner, Alisa Javadi, Tommaso Pregnolato, Rüdiger Schott, Leonardo Midolo, Andreas V. Kuhlmann, Søren Stobbe, Andreas D. Wieck, Peter Lo… 展开作者
Matthias C. Löbl, Immo Söllner, Alisa Javadi, Tommaso Pregnolato, Rüdiger Schott, Leonardo Midolo, Andreas V. Kuhlmann, Søren Stobbe, Andreas D. Wieck, Peter Lodahl, Arne Ludwig, Richard J. Warburton
We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,μ\text{eV}$, just a factor of two above the transform limit. Clear optical spin pumping is observed in a magnetic field of $0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots -- highly coherent single photon generation, ultra-fast optical spin manipulation -- in the thin diodes required in quantum nano-photonics and nano-phononics applications.
We present a quantitative theory of the suppression of the optical linewidth due to charge fluctuation noise in a ${p}$$-$${n}$ diode, recently observed in Anderson et al., Science 366, 1225 (2019). We connect the local electric field with the voltage across the diode, allowing for the identification of the defect depth from the experimental threshold voltage. Furthermore, we show that an accurate description of the decoherence of such spin centers requires a complete spin$-$1 formalism that yields a bi-exponential decoherence process, and predict how reduced charge fluctuation noise suppresse…
The control over the spectral broadening of an ensemble of emitters, mainly attributable to the size and shape dispersion and the homogenous broadening mechanisms, is crucial to several applications of quantum dots. We present a convenient self-assembly approach to deliver strain-free GaAs quantum dots with size distribution below 15%, due to the control of the growth parameters during the preliminary formation of the Ga droplets. This results in an ensemble photoluminescence linewidth of 19 meV at 14 K. The narrow emission band and the absence of a wetting layer promoting dot-dot coupling all…
The potential of semiconductors assembled from nanocrystals (NC semiconductors) has been demonstrated for a broad array of electronic and optoelectronic devices, including transistors, light emitting diodes, solar cells, photodetectors, thermoelectrics, and phase charge memory cells. Despite the commercial success of nanocrystals as optical absorbers and emitters, applications involving charge transport through NC semiconductors have eluded exploitation due to the inability for predictive control of their electronic properties. Here, we perform large-scale, ab-initio simulations to understand …
Giant Purcell broadening and Lamb shift for DNA-assembled near-infrared quantum emitters
Ecole Polytechnique Fédérale de Lausanne (EPFL)（洛桑联邦理工学院）；University of Fribourg（弗里堡大学）；Materials Physics Center CSIC-UPV/EHU（CSIC-巴斯克国立自治大学材料物理中心）；Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；Ikerbasque, Basque Foundation for Science（伊克拉巴斯科，巴斯克科学基金会）；University of the Basque Country (UPV/EHU)（巴斯克国立自治大学）
Near transform-limited single photons from rapid-thermal annealed quantum dots
Faculty of Physics and CENIDE, University of Duisburg-Essen（杜伊斯堡-埃森大学物理学院和CENIDE）；Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum（波鸿鲁尔大学应用固体物理学讲座）
Quantum technologies could largely benefit from the control of quantum emitters in sub-micrometric size crystals. These are naturally prone to the integration in hybrid devices, including heterostructures and complex photonic devices. Currently available quantum emitters sculpted in nanocrystals suffer from spectral instability, preventing their use as single photon sources e.g., for most quantum optics operations. In this work we report on unprecedented performances of single-photon emission from organic nanocrystals (average size of hundreds \SI{}{\nano\meter}), made of anthracene (Ac) and d…
InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic char…
Layered multi-ferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized CuInP$_2$S$_6$ is a layered material that displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, CuInP$_2$S$_6$ spontaneously phase segregates to form ferrielectric CuInP$_2$S$_6$ (CIPS) and paraelectric In$_{4/3}$P$_2$S$_6$ (IPS) domains in a two-dimensional self-assembled heterostructure. Here, we study the effect of hydrostatic pressure on the structure of Cu-deficient CuInP$_2$S$_6$ by Raman spectroscopy me…
Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse…
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most conventional solid-state single-photon sources are based on single emitters such as self-assembled quantum dots, which are created at random locations and require spectral filtering. These issues hinder the integration of a single-photon source into a scaleable photonic quantum network for applications such as on-chip photonic quantum processors. In this work, using …
