arXiv 0801.38292008-01cond-mat.mtrl-sci

双层石墨烯的铁磁邻近效应和磁电阻

Ferromagnet proximity effects and magnetoresistance of bilayer graphene

Y. G. Semenov, K. W. Kim, J. M. Zavada

备注：: 9 pages, 4 figures

摘要：

当双层石墨烯置于两个铁磁绝缘体之间时，其电子能带结构发生了剧烈的变化。由于与邻近铁磁体的交换相互作用，石墨烯沟道中的电子能量色散强烈地依赖于两个铁磁层$\mathbf{M_{1}}$和$\mathbf{M_{2}} $的磁化取向。虽然平行构型$\mathbf{M_{1}}= \mathbf{M_{2}}$导致导带和价带两者的简单自旋分裂，但只要$\mathbf{M_{1}}$和$% \mathbf{M_{2}}$之间的角度$θ$变为非零，就诱导能隙，其中在$θ=π$处达到最大值（即，反平行排列）。因此，双层石墨烯可以在面内电流配置中表现出相当大的磁阻效应。粗略的估计表明，在室温下，电阻的变化约为百分之几十。随着温度的降低，这种影响预计将变得更加明显。

英文摘要：

A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in the graphene channel strongly depends on the magnetization orientation of two ferromagnetic layers, $\mathbf{M_{1}}$ and $\mathbf{M_{2}} $. While the parallel configuration $\mathbf{M_{1}}= \mathbf{M_{2}}$ leads to simple spin splitting of both conduction and valence bands, an energy gap is induced as soon as the angle $θ$ between $\mathbf{M_{1}}$ and $% \mathbf{M_{2}}$ becomes non-zero with the maximum achieved at $θ=π$ (i.e., antiparallel alignment). Consequently, bilayer graphene may exhibit a sizable magnetoresistive effect in the current-in-plane configuration. A rough estimate suggests the resistance changes on the order of tens of percent at room temperature. This effect is expected to become more pronounced as the temperatures decreases.

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