具有铁磁MnAs源极和漏极接触的自旋MOSFET的磁阻
Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts
摘要：
研究了具有铁磁MnAs源漏接触的自旋金属氧化物半导体场效应晶体管（spinMOSFET）的自旋输运特性.采用在绝缘体上硅（SOI）衬底上外延生长MnAs薄膜的方法，通过光刻技术制备了底栅型自旋MOSFET。在恒定的源-漏和源-栅偏置下，面内磁电阻表现出自旋阀型的滞后行为。通过与MnAs接触引起的磁化相关电阻变化的比较，我们得出结论，自旋极化电子从MnAs源注入到Si MOS反型沟道，并由MnAs漏检测。
英文摘要：
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed spin-valve-type hysteretic behavior, when the measurements were performed with constant source-drain and source-gate biases. By comparing with the magnetization-related resistance change resulting from the MnAs contacts, we conclude that the spin-polarized electrons are injected from the MnAs source into the Si MOS inversion channel, and detected by the MnAs drain.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
