源漏注硅GaSb p沟MOSFET的温度特性
Temperature dependent characteristics of GaSb p-channel MOSFETs with Si-implanted source and drain
摘要：
采用原子层淀积Al_2O_3栅介质和自对准硅注入源/漏的GaSb p沟道MOSFET。热退火条件进行了优化的源/漏杂质激活。温度依赖的电气特性进行了研究。在两个不同的温度区观察到不同的电学行为，并提出了机制。关断状态漏极电流在低温区域中是主要的生成电流，并且在高温区域中是主要的扩散电流。
英文摘要：
GaSb p-channel MOSFETs with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si implanted source/drain are demonstrated. Thermal anneal conditions are optimized for the source/drain impurity activation. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two different temperature regions and the mechanisms underneath are proposed. Off-state drain current is generation current dominated in the low temperature regions and is diffusion current dominated in the high temperature regions.
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