双步退火恢复4 SiC DIMOSFET离子注入缺陷
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
摘要：
热退火对于修复DIMOSFET（双注入MOSFET）器件离子注入区的缺陷起着至关重要的作用。在这项工作中，我们已经研究了这种器件的体（Al注入）和源（P注入）区的双步骤退火的效果。我们发现，高温退火（1750°C，1小时），然后是低温退火（1500°C，4小时）是强制性的，以在器件的n型区和p型区中实现低缺陷浓度和良好的晶体质量。
英文摘要：
Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n- and p- type zones of the device.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
