We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic structure of graphene. By exploring these types of disorder and their connections, we show that they introduce dramatic changes in the low energy spectrum of graphene, viz. localized zero modes, strong resonances, gap and pseudogap behavior, and non-dispersive midgap zero modes.
We have studied numerically the statistics for electronic states (level-spacings and participation ratios) from disordered graphene of finite size, described by the aspect ratio $W/L$ and various geometries, including finite or torroidal, chiral or achiral carbon nanotubes. Quantum chaotic Wigner energy level-spacing distribution is found for weak disorder, even infinitesimally small disorder for wide and short samples ($W/L>>1$), while for strong disorder Anderson localization with Poisson level-statistics always sets in. Although pure graphene near the Dirac point corresponds to integrable b…
In two dimensions chaotic level-statistics is expected for massless Dirac fermions in the presence of disorder. For weakly disordered graphene flakes with zigzag edges the obtained level-spacing distribution in the Dirac region is neither chaotic (Wigner) nor localized (Poisson) but similar to that at the critical point of the Anderson metal-insulator transition. The quantum transport in finite graphene can occur via critical edge states as in topological insulators, for strong disorder the Dirac region vanishes and graphene behaves as ordinary Anderson insulator.
We investigate disordered graphene with strong long-range impurities. Contrary to the common belief that delocalization should persist in such a system against any disorder, as the system is ex-pected to be equivalent to a disordered two-dimensional Dirac Fermionic system, we find that states near the Dirac points are localized for sufficiently strong disorder and the transition between the localized and delocalized states is of Kosterlitz-Thouless type. Our results show that the transition originates from bounding and unbounding of local current vortices.
Quenched disorder in graphene is characterized by 5 constants and experiences the logarithmic renormalization even from the spatial scales smaller than the Fermi wavelength. We derive and solve renormalization group equations (RGEs) describing the system at such scales. At larger scales, we derive a non-linear supermatrix $σ$-model completely describing localization and crossovers between different ensembles. The parameters of this $σ$% -model are determined by the solutions of the RGEs.
We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene…
Laser irradiation, as a versatile tool to tune topological properties of electronic systems, is under intensive studies. Experimentally, laser irradiation induced anomalous Hall effect in graphene has been observed (McIver et al., Nat. Phys. 16, 38 (2020)). Disorder is ubiquitous in real materials, and it has been shown that diagonal disorders, i.e., onsite disorder, can enhance topological properties of time-periodically driven quantum materials (Titum et al., Phys. Rev. Lett. 114, 056801 (2015)). Here, we investigate circularly polarized laser irradiated graphene with non-diagonal disorders,…
We calculate the ground-state energy of Dirac electrons in graphene in the presence of disorder. We take randomly distributed charged impurities at a fixed distance from the graphene sheet and surface fluctuations (ripples) as the main scattering mechanisms. Mode-coupling approach to scattering rate and random-phase approximation for ground-state energy incorporating the many-body interactions and the disorder effects yields good agreement with experimental inverse compressibility.
The DC conductivity of monolayer and bilayer graphene is studied perturbatively for different types of disorder. In the case of monolayer, an exact cancellation of logarithmic divergences occurs for all disorder types. The total conductivity correction for a random vector potential is zero, while for a random scalar potential and a random gap it acquires finite corrections. We identify the diagrams which are responsible for these corrections and extrapolate the finite contributions to higher orders which gives us general expressions for the conductivity of weakly disordered monolayer graphene.…
Employing the Kernel Polynomial method (KPM), we study the electronic properties of the graphene bilayers in the presence of diagonal disorder, within the tight-binding approximation. The KPM method enables us to calculate local density of states (LDOS) without need to exactly diagonalize the Hamiltonian. We use the geometrical averaging of the LDOS's at different lattice sites as a criterion to distinguish the localized states from extended ones. We find that bilayer graphene undergoes Anderson metal-insulator transition at a critical value of disorder strength.
We suggest a simple model of disorder in graphene assuming that there are randomly distributed positive and negative centers with equal concentration $N/2$ in the bulk of silicon oxide substrate. We show that at zero gate voltage such disorder creates two-dimensional concentration $n_0 \sim N^{2/3}$ of electrons and holes in graphene. Electrons and holes reside in alternating in space puddles of the size $R_0 \sim N^{-1/3}$. A typical puddle has only one or two carriers in agreement with recent scanning single electron transistor experiment.
We report on a numerical study of quantum transport in disordered two dimensional graphene and graphene nanoribbons. By using the Kubo and the Landauer approaches, transport length scales in the diffusive (mean free path, charge mobilities) and localized regimes (localization lengths) are computed, assuming a short range disorder (Anderson-type). In agreement with localization scaling theory, the electronic systems are found to undergo a conventional Anderson localization in the zero temperature limit. Localization lengths in weakly disordered ribbons are found to differ by two orders of magni…
Broadening of the Landau levels in graphene and the associated quantum Hall plateau-to-plateau transition are investigated numerically. For correlated bond disorder, the graphene-specific n=0 Landau level of the Dirac fermions becomes anomalously sharp accompanied by the Hall transition exhibiting a fixed-point-like criticality. Similarly anomalous behavior for the n=0 Landau level is also shown to occur in correlated random magnetic fields, which suggests that the anomaly is generic to disorders that preserve the chiral symmetry.
We investigate the flat phase of $D$-dimensional crystalline membranes embedded in a $d$-dimensional space and submitted to both metric and curvature quenched disorders using a nonperturbative renormalization group approach. We identify a second order phase transition controlled by a finite-temperature, finite-disorder fixed point unreachable within the leading order of $ε=4-D$ and $1/d$ expansions. This critical point divides the flow diagram into two basins of attraction: that associated to the finite-temperature fixed point controlling the long distance behaviour of disorder-free membranes …
We study electronic transport in graphene nanoribbons with rough edges. We first consider a model of weak disorder that corresponds to an armchair ribbon whose width randomly changes by a single unit cell size. We find that in this case, the low-temperature conductivity is governed by an effective one-dimensional hopping between segments of distinct band structure. We then provide numerical evidence and qualitative arguments that similar behavior also occurs in the limit of strong uncorrelated boundary disorder.
We study the transport properties of a neutral graphene sheet with curved regions induced or stabilized by topological defects. The proposed model gives rise to Dirac fermions in a random magnetic field and in the random space dependent Fermi velocity induced by the curvature. This last term leads to singular long range correlated disorder with special characteristics. The Drude minimal conductivity at zero energy is found to be inversely proportional to the density of topological disorder, a signature of diffusive behavior.
Graphene superlattices (GSLs), formed by subjecting a monolayer graphene sheet to a periodic potential, can be used to engineer band structures and, from there, charge transport properties, but these are sensitive to the presence of disorder. The localization behavior of massless 2D Dirac particles induced by weak disorder is studied for both scalar-potential and vector-potential GSLs, computationally as well as analytically by a weak-disorder expansion. In particular, it is investigated how the Lyapunov exponent (inverse localization length) depends on the incidence angle to a 1D GSL. Delocal…
We calculate the quasiparticle properties of chiral two-dimensional Dirac electrons in graphene within the Landau Fermi Liquid scheme based on $GW$ approximation in the presence of disorder. Disorder effects due to charged impurity scattering plays a crucial role in density dependence of quasiparticle quantities. Mode-coupling approach to scattering rate and self-energy in $GW$ approximation for quasiparticle renormalized Fermi velocity and spin-antisymmetric Landau Fermi parameter incorporating the many-body interactions and the disorder effects show reduction of these quantities by 5-15 perc…
Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.
We analyze the full transport statistics of graphene with smooth disorder at low dopings. First we consider the case of 1D disorder for which the transmission probability distribution is given analytically in terms of the graphene-specific mean free path. All current cumulants are shown to scale with system parameters (doping, size, disorder strength and correlation length) in an identical fashion for large enough systems. In the case of 2D disorder, numerical evidence is given for the same kind of identical scaling of all current cumulants, so that the ratio of any two such cumulants is unive…
We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the concentration dependence of conductivity is linear in the case of strong scatterers, in line with recent experimental observations, and logarithmic for weak scatterers. At half filling the conductivity is of the order of e^2/h if the randomness preserves one of the chiral symmetries of the clean Hamiltonian; otherwise, the conductivity is strongly affected …
We present a method for obtaining quantum transport properties in graphene that uniquely combines three crucial features: microscopic treatment of charge disorder, fully quantum mechanical analysis of transport, and the ability to model experimentally relevant system sizes. As a pertinent application we study the disorder dependence of Klein tunneling dominated transport in p-n-p junctions. Both the resistance and the Fano factor show broad resonance peaks due to the presence of quasi bound states. This feature is washed out by the disorder when the mean free path becomes of the order of the d…
We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite size errors. Within this approach, both weak and strong disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, …
We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed back-scattering are formed in this model in the direction of the lines. The system reveals Lévy-flight transport in stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast…
Transport in disordered armchair graphene nanoribbons (AGR) with long-range correlation between quantum wire contact is investigated by transfer matrix combined with Landauer's formula. Metal-insulator transition is induced by disorder in neutral AGR. Thereinto, the conductance is one conductance quantum for metallic phase and exponentially decays otherwise when the length of AGR is infinity and far longer than its width. Similar to the case of long-range disorder, the conductance of neutral AGR first increases and then decreases while the conductance of doped AGR monotonically decreases, as t…
We investigate the electronic transport properties of unbiased and biased bilayer graphene nanoribbon in n-p and n-n junctions subject to a perpendicular magnetic field. Using the non-equilibrium Green's function method and the Landauer-Büttiker formalism, the conductance is studied for the cases of clean, on-site, and edge disordered bilayer graphene. We show that the lowest Hall plateau remains unchanged in the presence of disorder, whereas asymmetry destroys both the plateaus and conductance quantization. In addition, we show that disorder induces an enhancement of the conductance in the n-…
Off-diagonal disorder with random hopping between the sublattices of a bipartite lattice is described by a Hamiltonian which has chiral (sub-lattice) symmetry. The energy spectrum is symmetric around E=0 and for odd total number of lattice sites an isolated zero mode always exists, which coincides with the mobility edge of an Anderson transition in two dimensions(2D). In the chiral orthogonal symmetry class BDI we compute the fractal dimension $D_{2}$ of the zero mode for graphene samples with edges. In the absence of disorder $D_{2}=1$, which corresponds to a one-dimensional edge states, whil…
The band structure of graphene ribbons with zigzag edges have two valleys well separated in momentum space, related to the two Dirac points of the graphene spectrum. The propagating modes in each valley contain a single chiral mode originating from a partially flat band at band center. This feature gives rise to a perfectly conducting channel in the disordered system, if the impurity scattering does not connect the two valleys, i.e. for long-range impurity potentials. Ribbons with short-range impurity potentials, however, through inter-valley scattering display ordinary localization behavior. …
Effects of disorder and valley polarization in graphene are investigated in the quantum Hall regime. We find anomalous localization properties for the lowest Landau level (LL), where disorder can induce wavefunction delocalization (instead of localization), both for white-noise and gaussian-correlated disorder. We quantitatively identify the contribution of each sublattice to wavefunction amplitudes. Following the valley (sublattice) polarization of states within LLs for increasing disorder we show: (i) valley mixing in the lowest LL is the main effect behind the observed anomalous localizatio…
We consider the conductivity $σ_{xx}$ of graphene with negligible intervalley scattering at half filling. We derive the effective field theory, which, for the case of a potential disorder, is a symplectic-class $σ$-model including a topological term with $θ=π$. As a consequence, the system is at a quantum critical point with a universal value of the conductivity of the order of $e^2/h$. When the effective time reversal symmetry is broken, the symmetry class becomes unitary, and $σ_{xx}$ acquires the value characteristic for the quantum Hall transition.
In a graphene {\em pn} junction at high magnetic field, unidirectional "snake states" are formed at the {\em pn} interface. In a clean {\em pn} junction, each snake state exists in one of the valleys of the graphene band structure, and the conductance of the junction as a whole is determined by microscopic details of the coupling between the snake states at the {\em pn} interface and quantum Hall edge states at the sample boundaries [Tworzydlo {\em et al.}, Phys. Rev. B {\bf 76}, 035411 (2007)]. Disorder mixes and couples the snake states. We here report a calculation of the full conductance d…
We develop a theory for a qualitatively new type of disorder in condensed matter systems arising from local twist-angle fluctuations in two strongly coupled van der Waals monolayers twisted with respect to each other to create a flat band moiré superlattice. The new paradigm of 'twist angle disorder' arises from the currently ongoing intense research activity in the physics of twisted bilayer graphene. In experimental samples of pristine twisted bilayer graphene, which are nominally free of impurities and defects, the main source of disorder is believed to arise from the unavoidable and uncont…
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obtained from a tight-binding lattice description. A spectral gap, which may originate from strain effects, additional adsorbed atoms or substrate-induced sublattice-symmetry breaking, allows for bound and scattering states. As long as the diameter of the dot is much larger than the lattice constant, the results of the continuum and the lattice model …
We calculate the heat flux and electron-phonon thermal conductance in a disordered graphene sheet, going beyond a Fermi's Golden rule approach to fully account for the modification of the electron-phonon interaction by disorder. Using the Keldysh technique combined with standard impurity averaging methods in the regime $k_F l >> 1$ (where $k_F$ is the Fermi wavevector, l the mean free path), we consider both scalar potential (i.e. deformation potential) and vector potential couplings between electrons and phonons. We also consider the effects of electronic screening at the Thomas-Fermi level. …
We address the question of the stability of the (fractional) quantum Hall effect (QHE) in presence of pseudomagnetic disorder generated by mechanical deformations of a graphene sheet. Neglecting the potential disorder and taking into account only strain-induced random pseudomagnetic fields, it is possible to write down a Laughlin-like trial ground-state wave function explicitly. Exploiting the Laughlin plasma analogy, we demonstrate that in the case of fluctuating pseudomagnetic fluxes of relatively small amplitude both the integer and fractional quantum Hall effects are always stable upon the…
Non-diagonal (bond) disorder in graphene broadens Landau levels (LLs) in the same way as random potential. The exception is the zeroth LL, $n=0$, which is robust to the bond disorder, since it does not mix different $n=0$ states within a given valley. The mechanism of broadening of the $n=0$ LL is the inter-valley scattering. Several numerical simulations of graphene with bond disorder had established that $n=0$ LL is not only anomalously narrow but also that its shape is very peculiar with three maxima, one at zero energy, $E=0$, and two others at finite energies $\pm E$. We study theoretical…
We numerically study the interplay between superconductivity and disorder on the graphene honeycomb lattice with on-site Hubbard attractive interactions U using a spatially inhomogeneous self-consistent Bogoliubov-de Gennes (BdG) approach. In the absence of disorder there are two phases at charge neutrality. Below a critical value Uc for attractive interactions there is a Dirac semimetal phase and above it there is a superconducting phase. We add scalar potential disorder to the system, while remaining at charge neutrality on average. Numerical solution of the BdG equations suggests that while…
