We study electronic transport in graphene nanoribbons with rough edges. We first consider a model of weak disorder that corresponds to an armchair ribbon whose width randomly changes by a single unit cell size. We find that in this case, the low-temperature conductivity is governed by an effective one-dimensional hopping between segments of distinct band structure. We then provide numerical evidence and qualitative arguments that similar behavior also occurs in the limit of strong uncorrelated boundary disorder.
Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
The geometric, electronic and magnetic properties of strained graphene nanoribbons were investigated using spin polarized calculations within the framework of density functional theory. Cases of compressive stress along the longer axis of a nanoribbon and tensile stress at the midpoint and perpendicular to the plane of the nanoribbon were considered. Significant structural changes were observed including the formation of nanoripples. The calculated electronic and magnetic properties strongly depend on the size and shape of nanoribbons. The tunable magnetic properties of strained nanoribbons ca…
Using the partition-free time-dependent Landauer-B{ü}ttiker formalism for transient current correlations, we study the traversal times taken for electrons to cross graphene nanoribbon (GNR) molecular junctions. We demonstrate electron traversal signatures that vary with disorder and orientation of the GNR. These findings can be related to operational frequencies of GNR-based devices and their consequent rational design.
Graphene nanoribbons' electronic transport properties strongly depend on the type of edge, armchair, zigzag or other, and on edge functionalization that can be used for band-gap engineering. For only partly hydrogenated edges interesting magnetic properties are predicted. Electric charge accumulates at edges and corners. Scanning force microscopy has so far shown the centre of graphene nanoribbons with atomic resolution using a quartz crystal tuning fork sensor of high stiffness. Weak long-range electrostatic forces related to the charge accumulation on the edges of graphene nanoribbons could …
An odd number of zigzag edges in armchair graphene nanoribbons and their mechanical properties (e.g., Young's modulus, Poisson ratio and shear modulus) have potential interest for bandgap engineering in graphene based optoelectronic devices. In this paper, we consider armchair graphene nanoribbons passivated with hydrogen at the armchair edges and then apply the strain for tuning the bandgaps. Using density functional theory calculations, our study finds that the precise control of strain can allow tuning the bandgap from semiconductor to mettalic and then again switching back to semiconductor…
Thermoelectric properties of Graphene Nanoribbons doped by magnetic impurities Fe and Co are carried out in room temperature. We report on a study of the band structure dependent properties such as electrical conductivity, charge of carriers and Seebeck coefficients. We investigate the thermoelectric properties using the Semi-classical Boltzmann method. The electronic band structure of doped nanoribbons are evaluated by using density-functional theory in which the Hubbard interaction is considered. In this work we compare the different types of the nanoribbons and their thermoelectric features…
The effects of substrate on the electronic properties of Graphene remains unclear. Many theoretical and experimental efforts have been done to clarify this discrepancy. In this work, we studied the electronic transport in armchair Graphene nanoribbons (AGNR) in the presence of substrate's disorder. The three main substrate's disorders -- surface roughness, charged impurity and surface optical phonon -- are investigated. Non-Equilibrium Green's function along with the tight-binding model is employed to investigate the electronic properties of Graphene Nanoribbons. The effects of these disorders…
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNR with excellent transport properties [2-7]. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNR are supposed to be used in advanced nanoelectronics, high qualit…
