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arXiv 1005.5220cond-mat.mes-hallcond-mat.dis-nn
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高偏压下双层石墨烯中无序诱导的磁振荡

Disorder-induced magnetooscillations in bilayer graphene at high bias

V. V. Mkhitaryan, M. E. Raikh

摘要:

底部附近的偏压双层石墨烯的能谱具有“墨西哥帽”状形状。对于费米水平内的墨西哥帽,我们预测,除了传统的磁振荡消失的温度,有额外的磁振荡是弱敏感的温度。这些振荡对长程无序也不敏感。它们在磁场中的周期与偏置V成比例,即V^2。这些振荡的起源是无序诱导的类电子和类空穴费米面之间的散射,具体的墨西哥帽。

英文摘要:

Energy spectrum of biased bilayer graphene near the bottom has a "Mexican-hat"-like shape. For the Fermi level within the Mexican hat we predict that, apart from conventional magnetooscillations which vanish with temperature, there are additional magnetooscillations which are weakly sensitive to temperature. These oscillations are also insensitive to a long-range disorder. Their period in magnetic field scales with bias, V, as V^2. The origin of these oscillations is the disorder-induced scattering between electron-like and hole-like Fermi-surfaces, specific for Mexican hat.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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