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arXiv 1111.5894cond-mat.mes-hall
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有限电场中双层石墨烯中拓扑保护的朗道能级

Topologically protected Landau levels in bilayer graphene in finite electric fields

Tohru Kawarabayashi, Yasuhiro Hatsugai, Hideo Aoki

摘要:

结果表明,只要键无序在几个晶格常数范围内相关,双层石墨烯的零能朗道能级对键无序的影响就非常明显(类似于δ函数),这种零模反常的鲁棒性可以归因于保持了手征对称性.出乎意料的是,即使当我们施加有限的电势差(即,电场)时,谷分裂的$n=0$朗道能级保持非常尖锐,尽管它们现在偏离了零能量,而$n=1$朗道能级表现出通常的行为。

英文摘要:

The zero-energy Landau level of bilayer graphene is shown to be anomalously sharp (delta-function like) against bond disorder as long as the disorder is correlated over a few lattice constants.The robustness of the zero-mode anomaly can be attributed to the preserved chiral symmetry. Unexpectedly, even when we apply a finite potential difference (i.e., an electric field) between the top and the bottom layers, the valley-split $n=0$ Landau levels remain anomalously sharp although they are now shifted away from the zero energy, while the $n=1$ Landau levels exhibit the usual behavior.

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