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arXiv 2109.03071cond-mat.mes-hall
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第IV族二维狄拉克材料中的拓扑保护一维电子态

Topologically protected one-dimensional electronic states in group IV two-dimensional Dirac materials

H. J. W. Zandvliet, J. D. Verbakel, Q. Yao, K. Sotthewes, P. Bampoulis

AI总结:

本文介绍了第IV族二维类石墨烯材料中拓扑保护一维电子态的出现,讨论了自旋-轨道耦合对能带结构的影响,指出这些材料是展现量子自旋霍尔效应的潜在候选者,并详细阐述了小角度扭曲双层石墨烯中电场诱导的一维拓扑保护电子态六边形网络的形成。

摘要:

在本报告中,我们简要介绍了第IV族二维类石墨烯材料中拓扑保护一维电子态的出现。我们讨论了自旋-轨道耦合对电子能带结构的影响,并表明这些材料是展现量子自旋霍尔效应的潜在候选者。量子自旋霍尔效应的特征是带隙内部和金属反向自旋极化拓扑保护边缘态。我们还详细阐述了小角度扭曲双层石墨烯中电场诱导的一维拓扑保护电子态六边形网络的形成。

英文摘要:

In this report we give a brief introduction on the occurrence of topologically protected one-dimensional electronic states in group IV two-dimensional graphene-like materials. We discuss the effect of spin-orbit coupling on the electronic band structure and show that these materials are potential candidates to exhibit the quantum spin Hall effect. The quantum spin Hall effect is characterized by a gapped interior and metallic counter-propagating spin-polarized topologically protected edges states. We also elaborate on the electric-field induced formation of a hexagonal network of one-dimensional topologically protected electronic states in small-angle twisted bilayer graphene.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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