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arXiv 0708.2834cond-mat.mtrl-sci
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苯乙烯在理想Si[111]表面上的负微分电阻:I-V特性与STM针尖的几何形状、表面掺杂和形状的关系

Negative differential resistance of Styrene on an ideal Si[111] surface: dependence of the I-V characteristics on geometry, surface doping and shape of the STM-tip

Samuel E. Baltazar, Mario De Menech, Ulf Saalmann, Aldo H. Romero, Martin E. Garcia

摘要:

利用STM探针研究了有机分子苯乙烯(C_8H_8)在硅[111]表面上的电子输运性质。用基于非平衡格林函数的自洽方法计算了分子的I-V特性和微分电导。两种不同的吸附构型的分子在表面上被认为是对应于一个全球和一个局部最低的总能量。在这两种情况下,我们发现一个负微分电阻(NDR)在一个给定的偏置电压的间隔。这种效应由接近表面费米能级的可用状态控制,并且可以通过适当地掺杂衬底来操纵。分析了针尖形状对I-V特性的影响。

英文摘要:

We study the electron transport properties through a supported organic molecule styrene (C8H8) on an ideal silicon surface Si[111] and probed by a STM-tip. The I-V characteristics and the differential conductance of the molecule are calculated using a self consistent approach based on non equilibrium Green's functions. Two different adsorption configurations for the molecule on the surface were considered which corresponds to a global and a local minimum of the total energy. In both cases we find a negative differential resistance (NDR) in a given interval of bias voltages. This effect is controlled by the states available close to the Fermi level of the surface and can be manipulated by properly doping the substrate. We also analyze the influence of the tip-shape on the I-V characteristics.

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