In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.
Measurement of multiple quantum devices on a single chip increases characterization throughput and enables testing of device repeatability, process yield, and systematic variations in device design. We present a method that uses on-chip field-effect transistor switches to enable multiplexed cryogenic measurements of double quantum dot Si/SiGe devices. Multiplexing makes it feasible to characterize a number of devices that scales exponentially with the number of external wires, a key capability given the significant constraints on cryostat wiring currently in common use. We use this approach to…
We consider a single Cooper pair transistor (SCPT) coupled capacitively to a voltage biased Josephson junction, used as a high frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the DC Josephson current of the SCPT was measured. This allows to probe the phase and gate bias dependence of energy levels of the SCPT at high energy. Because the energies of photons can be higher than the superconducting gap we can induce not only trans…
In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistan…
We report on the investigation of Al single electron structures equipped with miniature (8 um long) on-chip Cr resistors of R > R_k = h/e^2 = 25.8 kOhm. From the measurement of the Coulomb blockade in single-junction structures we evaluated the self-capacitance of our resistors per unit length, c = 62 aF/um. We demonstrate that the cotunneling current in the transistor samples in the Coulomb blockade regime obeys the power law, $I \propto V^{3+(R/R_k)}$, predicted by Odintsov, Bubanja and Schön for a transistor having pure ohmic-resistance leads. The concept of the three-junction single electr…
We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R about R_Q = h/4e^2 = 6.45 kOhm, which are explained in terms of Cooper-pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
Statistical evaluation of 571 GaAs quantum point contact transistors showing the 0.7 anomaly in quantized conductance using millikelvin cryogenic on-chip multiplexing
Single-electron effects have been widely investigated as a typical physical phenomenon in nanoelectronics. The single-electron effect caused by trap sites has been observed in many devices. In general, traps are randomly distributed and not controllable; therefore, different current--voltage characteristics are observed through traps even in silicon transistors having the same device parameters (e.g., gate length). This allows us to use single-electron effects as fingerprints of chips. In this study, we analyze the single-electron effect of traps in conventional silicon transistors and show th…
We performed radiofrequency (RF) reflectometry measurements at 2.4 GHz on electrolyte-gated graphene field-effect transistors (GFETs) utilizing a tunable stub-matching circuit for impedance matching. We demonstrate that the gate voltage dependent RF resistivity of graphene can be deduced even in the presence of the electrolyte which is in direct contact with the graphene layer. The RF resistivity is found to be consistent with its DC counterpart in the full gate voltage range. Furthermore, in order to access the potential of high-frequency sensing for applications, we demonstrate time-dependen…
We perform direct thermovoltage measurements in a single-electron transistor, using on-chip local thermometers, both in the linear and non-linear regimes. Using a model which accounts for co-tunneling, we find excellent agreement with the experimental data with no free parameters even when the temperature difference is larger than the average temperature (far-from-linear regime). This allows us to confirm the sensitivity of the thermovoltage on co-tunneling and to find that in the non-linear regime the temperature of the metallic island is a crucial parameter. Surprisingly, the metallic island…
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In our samples with relatively large charging energy values Ec > EJ, where EJ is the energy of the Josephson coupling, two transport mechanisms were found to be dominating, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island (in the open state of the transistor around the points Qg = CgVg = e mod…
We have analyzed numerically the response and noise-limited charge sensitivity of a radio-frequency single-electron transistor (RF-SET) in a non-superconducting state using the orthodox theory. In particular, we have studied the performance dependence on the quality factor Q of the tank circuit for Q both below and above the value corresponding to the impedance matching between the coaxial cable and SET.
We demonstrate sensitive and fast electrical measurements of a carbon nanotube mechanical resonator. The nanotube is configured as a single-electron transistor, whose conductance is a sensitive transducer for its own displacement. Using an impedance-matching circuit followed by a cryogenic amplifier, the vibrations can be monitored in real time. The sensitivity of this continuous displacement measurement approaches within a factor 470 of the standard quantum limit.
We report on the effect of the frequency-locked transfer of single Cooper pairs in a superconducting single-electron Al transistor embedded in a dissipative environment (on-chip Cr resistor of R = 40 kOhm). The transistor was dc voltage biased, and the harmonic signal of frequency f of several MHz was applied to the gate. Due to the substantial rate of relaxation, the unidirectional transfer of single pairs occurred in each junction once per clock cycle and the current plateaus at I = 2ef were developed in the transistor's I-V curves. The mechanisms (supercurrent, Landau-Zener tunneling, quasi…
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations i…
We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.
We have analyzed the response and noise-limited sensitivity of the radio-frequency single-electron transistor (RF-SET), extending the previously developed theory to the case of arbitrary large quality factor Q of the RF-SET tank circuit. It is shown that while the RF-SET response reaches the maximum at Q roughly corresponding to the impedance matching condition, the RF-SET sensitivity monotonically worsens with the increase of Q. Also, we propose a novel operation mode of the RF-SET, in which an overtone of the incident rf wave is in resonance with the tank circuit.
A radio-frequency (rf) matching circuit with an in situ tunable varactor diode used for rf reflectometry measurements in semiconductor nanostructures is investigated and used to optimize the sample-specific chip design. The samples are integrated in a 2-4 GHz stub-matching circuit consisting of a waveguide stub shunted to the terminated coplanar waveguide. Several quantum point contacts fabricated on a GaAs/AlGaAs heterostructure with different chip designs are compared. We show that the change of the reflection coefficient for a fixed change in the quantum point contact conductance can be enh…
The low-frequency noise figures of single-electron transistors (electrometers) of traditional planar and new stacked geometry were compared. We observed a correlation between the charge noise and the contact area of the transistor island with a dielectric substrate in the set of Al transistors located on the same chip and having almost similar electric parameters. We have found that the smaller the contact area the lower the noise level of the transistor. The lowest noise value 8*10E-6 e/sqrt(Hz) at f = 10 Hz. has been measured in a stacked transistor with an island which was completely isolat…
We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions connected in series, which in our case have been replaced by two superconducting interferometer loops, each with two junctions in parallel. A capacitively coupled gate is supplied to control the induced charge of the small intermediate electrode (island) of the transistor. The measured I-V curves show no hysteresis and correspond to the operation of a effective Josephson junction at the high-damping and strong-noise l…
Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly-scaled modern transistors. As a step toward addressing this problem, we have measured the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250$^\circ$C, using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this rea…
We report on the on-chip detection of microwaves in the frequency range around 100GHz. For the purpose of detection, we employ a discrete transport channel triggered in a superconducting single-electron transistor by photon-assisted tunneling of quasiparticles. The technique is successfully applied to observe the spectrum of the dressed states of a model cQED system consisting of a superconducting coplanar resonator coupled to a quantum Josephson oscillator. The dressed states appear as typical resonance anticrossing exhibiting, in our case, an expectedly wide frequency splitting corresponding…
Cryogenic characterization and modeling of 0.18um CMOS technology (1.8V and 5V) are presented in this paper. Several PMOS and NMOS transistors with different width to length ratios(W/L) were extensively characterized under various bias conditions at temperatures ranging from 300K down to 4.2K. We extracted their fundamental physical parameters and developed a compact model based on BSIM3V3. In addition to their I-V characteristics, threshold voltage(Vth) values, on/off current ratio, transconductance of the MOS transistors, and resistors on chips are measured at temperatures from 300K down to …
We report the realization of a bonded-bridge on-chip superconducting coil and its use in impedance-matching a highly ohmic quantum dot (QD) to a $\rm{3~GHz}$ measurement setup. The coil, modeled as a lumped-element $LC$ resonator, is more compact and has a wider bandwidth than resonators based on coplanar transmission lines (e.g. $λ/4$ impedance transformers and stub tuners) at potentially better signal-to-noise ratios. In particular for measurements of radiation emitted by the device, such as shot noise, the 50$\times$ larger bandwidth reduces the time to acquire the spectral density. The res…
The electron transport through a three-terminal single-molecular transistor (SMT) is theoretically studied. We find that the differential conductance of the third and weakly coupled terminal versus its voltage matches well with the spectral function versus the energy when certain conditions are met. Particularly, this excellent matching is maintained even for complicated structure of the phonon-assisted side peaks. Thus, this device offers an experimental approach to explore the shape of the phonon-assisted spectral function in detail. In addition we discuss the conditions of a perfect matchin…
Technological growth in the electronics industry has historically been measured by the number of transistors that can be crammed onto a single microchip. Unfortunately, all good things must come to an end; spectacular growth in the number of transistors on a chip requires spectacular reduction of the transistor size. For electrons in semiconductors, the laws of quantum mechanics take over at the nanometre scale, and the conventional wisdom for progress (transistor cramming) must be abandoned. This realization has stimulated extensive research on ways to exploit the spin (in addition to the orb…
Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocavities. Here, we report strong quantum correlations between photons on picosecond timescales. We observe (a) photon antibunching upon resonant excitation of the lowest-energy polariton state, proving that…
We demonstrate a chip-integrated semiconductor source that combines polarization and frequency entanglement, allowing the generation of entangled biphoton states in a hybrid degree of freedom without postmanipulation. Our AlGaAs device is based on type-II spontaneous parametric down-conversion (SPDC) in a counterpropagating phase-matching scheme, in which the modal birefringence lifts the degeneracy between the two possible nonlinear interactions. This allows the direct generation of polarization-frequency entangled photons, at room temperature and telecom wavelength, and in two distinct spati…
Scalable quantum photonic technologies require low-loss integration of many identical single-photon sources with photonic circuitry on a chip. Relatively complex quantum photonic circuits have already been demonstrated; however, sources used so far relied on parametric-down-conversion. Hence, the efficiency and scalability are intrinsically limited by the probabilistic nature of the sources. Quantum emitter-based single-photon sources are free of this limitation, but frequency matching of multiple emitters within a single circuit remains a challenge. In this work, we demonstrate a key componen…
On-chip quantum sensing of Kondo spins in a high-mobility quasi-one-dimensional nanoconstriction
National Yang Ming Chiao Tung University（国立阳明交通大学）；National Cheng Kung University（国立成功大学）；University College London（伦敦大学学院）；National Taiwan University（国立台湾大学）；Cavendish Laboratory, J J Thomson Avenue, Cambridge CB3 0HE, United Kingdom（卡文迪许实验室）；Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom（谢菲尔德大学电子电气工程系）；Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan 701, Taiwan（国立成功大学量子前沿研究与技术中心）
A Superconducting Phase Transition Single-Electron Transistor
Quantum Motion（量子运动）；CIC nanoGUNE Consolider（纳米GUNE综合研究中心）；Department of Electrical and Electronic Engineering, Imperial College London（伦敦帝国理工学院电气与电子工程系）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯基克，巴斯克科学基金会）
