基于非易失性反相器的CiM：连续符号权重转换和低功耗片上训练
A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training
摘要：
在这项工作中，我们报告了一种新的设计，一个晶体管一个逆变器（1T1I），以满足高速和低功耗的片上培训的要求。通过利用掺杂的HfO2与铁电性，非易失性逆变器被成功地证明，通过可编程的阈值电压（VTH）的铁电场效应晶体管（FeFET），使负和正之间的所需的连续重量转变。与具有类似功能的常用设计相比，1T1I独特地以优化的工作电流实现了纯片内权重转换，而无需依赖片外计算单元进行符号权重比较，从而实现了低功耗下的高速训练。通过双晶体管单反相器（2T1I）设计，可以进一步提高线性度和训练速度。总的来说，专注于能源和时间效率，这项工作提供了一个有价值的设计策略，为未来的FeFET为基础的内存计算（CiM）。
英文摘要：
In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistance from off-chip calculation units for signed-weight comparison, facilitating high-speed training at low power consumption. Further improvements in linearity and training speed can be obtained via a two-transistor-one-inverter (2T1I) design. Overall, focusing on energy and time efficiencies, this work provides a valuable design strategy for future FeFET-based computing-in-memory (CiM).
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