负电容带隙变化场效应晶体管中的亚热电子开关
Sub-Thermionic Switching in a Negative-Capacitance Bandgap-Change Field-Effect Transistor
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中文总结 AI 辅助
本文提出负电容带隙变化场效应晶体管（NC-BCFET），利用铁电栅极放大电场以打开双层石墨烯带隙，实现15 mV/dec亚阈值摆幅，低于玻尔兹曼极限四倍，并压缩开关窗口37倍。
中文摘要 AI 辅助
克服亚阈值摆幅约60 mV/dec的玻尔兹曼极限仍然是低功耗纳米电子学的核心挑战。负电容场效应晶体管通过放大沟道电位来应对这一挑战，但其有效性受到电容匹配和传统沟道量子电容的限制。在此，我们模拟了一种负电容带隙变化场效应晶体管（NC-BCFET），其中铁电栅极堆叠转而放大打开沟道带隙的电场，使用实验验证的材料：双层石墨烯作为具有电可调带隙的沟道，以及Al$_{0.55}$Sc$_{0.45}$N作为负电容铁电体。我们的自洽框架将四带紧束缚哈密顿量与GW修正的屏蔽、准静态Landau-Devonshire铁电响应以及弹道Landauer-Büttiker输运耦合起来。负电容放大了层间电位差，将开关窗口相对于介电栅控对照压缩了37倍。在300 K下，优化的NC-BCFET实现了15 mV/dec的亚阈值摆幅，比玻尔兹曼极限低四倍，在100 K时改善至2.5 mV/dec。室温开关比受限于双层石墨烯的带隙，约为$10^{2}$。该概念直接扩展到具有更大场可调带隙的材料，在室温下可同时实现深度亚热电子开关和高开关比。
英文摘要
Overcoming the approximately 60~mV/dec Boltzmann limit of the subthreshold swing remains a central challenge for low-power nanoelectronics. Negative-capacitance field-effect transistors address it by amplifying the channel potential, but their effectiveness is constrained by capacitance matching and by the quantum capacitance of conventional channels. Here we model a negative-capacitance bandgap-change field-effect transistor (NC-BCFET), in which the ferroelectric gate stack instead amplifies the electric field that opens the bandgap of the channel, using experimentally proven materials: bilayer graphene as a channel with an electrically tunable bandgap and Al$_{0.55}$Sc$_{0.45}$N as the negative-capacitance ferroelectric. Our self-consistent framework couples a four-band tight-binding Hamiltonian with GW-corrected screening, a quasistatic Landau--Devonshire ferroelectric response, and ballistic Landauer--Büttiker transport. Negative capacitance amplifies the interlayer potential difference, compressing the switching window 37-fold relative to a dielectric-gated control. At 300~K, the optimized NC-BCFET achieves a subthreshold swing of 15~mV/dec, four times below the Boltzmann limit, improving to 2.5~mV/dec at 100~K. The room-temperature on/off ratio is limited to $\sim 10^{2}$ by the bandgap of bilayer graphene. The concept extends directly to materials with larger field-tunable bandgaps, where deep subthermionic switching and high on/off ratios can be achieved together at room temperature.
发表机构
- Indian Institute of Technology Bombay（印度理工学院孟买分校）
- Monash University（蒙纳士大学）
机构由 AI 辅助整理，请以论文原文为准。
