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arXiv 0707.0728cond-mat.mtrl-sci
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五元半金属Heusler合金的电子、磁性和与间隙有关的性质的工程设计

Engineering the electronic, magnetic and gap-related properties of the quinternary half-metallic Heusler alloys

K. Ozdogan, E. Sasioglu, I. Galanakis

摘要:

本文综述了五元全Heusler合金Co $_2$ [Cr $_{1-x}$ Mn $_x$ ][Al $_{1-y}$ Si $_y$ ]的电磁性质,采用了三种不同的方法:(i)相干势近似(CPA),(ii)虚晶近似(VCA),(iii)超晶胞计算(SC).所有三种方法给出了类似的结果,局部环境只表现出状态密度的小细节。所有研究中的合金都是半金属,它们的总自旋矩遵循理想半金属系统的所谓斯莱特-鲍林行为。我们特别集中在少数自旋带隙相关的属性。我们提出的可能性,以工程师的性质,这些合金通过改变低价过渡金属和$sp$原子的相对浓度在一个连续的方式。我们的结果表明,对于实际应用,理想的是富含Si和Cr的化合物,因为它们结合了大的能隙(约0.6 eV),相对于缺陷的稳健半金属性(费米能级位于带隙的中间附近)和费米能级周围的态的大多数自旋密度的高值,这是大的理想自旋值所需要的。自旋电子器件中的极化电流,如自旋阀或磁性隧道结。

英文摘要:

We review the electronic and magnetic properties of the quinternary full Heusler alloys of the type Co$_2$[Cr$_{1-x}$Mn$_x$][Al$_{1-y}$Si$_y$] employing three different approaches : (i) the coherent potential approximation (CPA), (ii) the virtual crystal approximation (VCA), and (iii) supercell calculations (SC). All three methods give similar results and the local environment manifested itself only for small details of the density of states. All alloys under study are shown to be half-metals and their total spin moments follow the so-called Slater-Pauling behavior of the ideal half-metallic systems. We especially concentrate on the properties related to the minority-spin band-gap. We present the possibility to engineer the properties of these alloys by changing the relative concentrations of the low-valent transition metal and $sp$ atoms in a continuous way. Our results show that for realistic applications, ideal are the compounds rich in Si and Cr since they combine large energy gaps (around 0.6 eV), robust half-metallicity with respect to defects (the Fermi level is located near the middle of the gap) and high values of the majority-spin density of states around the Fermi level which are needed for large values of the perfectly spin-polarized current in spintronic devices like spin-valves or magnetic tunnel junctions.

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