We have performed theoretical and experimental studies of field emission from nanostructured semiconductor cathodes. Resonant tunneling through electric-field-induced interface bound states is found to strongly affect the field-emission characteristics. Our analytical theory predicts power-law and Lorentzian-shaped current-voltage curves for resonant-tunneling field emission from three-dimensional substrates and two-dimensional accumulation layers, respectively. These predicted line shapes are observed in field emission characteristics from self-assembled silicon nanostructures. A simple model describes formation of an accumulation layer and of the resonant level in these systems.
A composite material is considered which consists of conducting nanoparticles separated by tunneling dielectric barriers. The influence of the phonon thermal conductivity of dielectric matrix on the thermoelectric figure of merit of this composite material is theoretically in-vestigated. The range of values and barrier parameters that can lead to the thermoelectric figure of merit greater than unity is estimated. The influence of space charge and nonlinearity of current-voltage relations of tunneling barrier are also discussed.
A nanostructured thermoelectric device is designed by connecting a double-barrier resonant tunneling heterostructure to two electron reservoirs. Based on Landauers equation and Fermi-Dirac statistics, the exact solution of the heat flow is calculated. The maximum power output and efficiency are calculated through the optimizations of several key parameters. The optimum characteristic curve of the performance is obtained. The reasonably working region of the device is determined, the selection criteria of main parameters are provided, and the optimum configuration of the device is drawn. Result…
Recently, new quantum features have been studied in the area of ridged quantum wells (RQW). Periodic ridges on the surface of the quantum well layer impose additional boundary conditions on the electron wave function and reduce the quantum state density. Electrons, rejected from forbidden quantum states, have to occupy the states with higher energy. As a result, Fermi energy in RQW increases and work function (WF) decreases. We investigate low WF electrode, com-posed from a metal RQW layer and a base substrate. The substrate material was selected so that electrons were confined to the RQW. The…
The use of an asymmetric broadening in the transport distribution, a characteristic of resonant structures, is proposed as a route to engineer a decrease in electronic thermal conductivity thereby enhancing the electronic figure of merit in nanostructured thermoelectrics. Using toy models, we first demonstrate that a decrease in thermal conductivity resulting from such an asymmetric broadening may indeed lead to an electronic figure of merit well in excess of 1000 in an idealized situation and in excess of 10 in a realistic situation. We then substantiate with realistic resonant structures des…
Superconductivity results from a Bose condensate of Cooper-paired electrons with a macroscopic quantum wavefunction. Dramatic effects can occur when the region of the condensate is shaped and confined to the nanometer scale. Recent progress in nanostructured superconductors has revealed a route to topological superconductivity, with possible applications in quantum computing. However, challenges remain in controlling the shape and size of specific superconducting materials. Here, we report a new method to create nanostructured superconductors by partial crystallization of the half-Heusler mate…
We investigate theoretically resonant tunneling through double-bended graphene nanoribbon structures, i.e., armchair-edged graphene nanoribbons (AGNRs) in between two semi-infinite zigzag graphene nanoribbon (ZGNR) leads. Our numerical results demonstrate that the resonant tunneling can be tuned dramatically by the Fermi energy and the length and/or widths of the AGNR for both the metallic and semiconductor-like AGNRs. The structure can also be use to control the valley polarization of the tunneling currents and could be useful for potential application in valleytronics devices.
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
We study tunneling between a localized defect state and a conduction band in the presence of strong electron-electron and electron-phonons interactions. We derive the tunneling rate as a function of the position of the defect energy level relative to the Fermi energy of conduction electrons. We argue that our results can explain the large tunneling timescales observed in experiments on random telegraph signals in ${\rm Si}$ metal-oxide-semiconductor field effect transistors.
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime of tunneling, which appears due to intersection of electron and hole branches of energy spectrum, are described. Dependencies of tunneling current on concentrations in top and bottom graphene layers, which are governed by the voltages applied through independent contacts and gates, are considered for the back- and double-gated structures. The current-voltage…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and the projected density of states by a nonlinear conductor, the Coulomb barrier by a capacitance, and the time evolution by an iterated map, is used. The model reproduces the observed hysteresis in such devices, and exhibits a series of bifurcations leading to fast chaotic current fluctuations.
We investigate the thermoelectric properties of Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs) by means of the linear-response theory combined with a first-principles-based Landauer-Büttiker approach. We find that the Seebeck coefficient of Fe/MgO/Fe(001) MTJs strongly depends on the barrier thickness and the tetragonal distortion. A compressive tetragonal distortion of the in-plane lattice parameter in the MTJs provides interface resonant states just above the Fermi energy. This causes resonant tunneling in the MTJs and significantly enhances the Seebeck coefficient when the thickness of the…
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to prob…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer embedded between two insulating barriers. A simple procedure, based on a detailed analysis of the differential conductance, allows to accurately determine the polarization of the ferromagnet. The spin-filtering character of such a system is furthermore addressed. We show that a 100% spin selectivity can be achieved under appropriate conditions. This approac…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of spin-polarized carriers: (i) electric current flow in the interface plane leads to spin polarization of the transmitted carriers, (ii) transmission of the spin-polarized carriers through the RTD is accompanied by generation of an in-plane electric current. The microscopic origin of the effects is the spin-orbit coupling-induced splitting of the resonant level.
We investigate sequential tunneling through a multilevel quantum dot confining multiple electrons, in the regime where several channels are available for transport within the bias window. By analyzing solutions to the master equations of the reduced density matrix, we give general conditions on when the presence of a second transport channel in the bias window quenches transport through the quantum dot. These conditions are in terms of distinct tunneling anisotropies which may aid in explaining the occurrence of negative differential conductance in quantum dots in the nonlinear regime.
Spin-charge interconversion is a very active direction in spintronics. Yet, the complex behaviour of some of the most promising systems such as SrTiO$_3$ (STO) interfaces is not fully understood. Here, on the basis of a 6-band $\boldsymbol{k.p}$ method combined with spin-resolved scattering theory, we give a theoretical demonstration of transverse spin-charge interconversion physics in STO Rashba interfaces. Calculations involve injection of spin current from a ferromagnetic contact by resonant tunneling into the native Rashba-split resonant levels of the STO triangular quantum well. We comput…
We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of th…
We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks are found eminating from different quasi-bound states in the middle region. The tunneling current can be turned on and off by varying the Fermi energy. Tunability of resonant tunneling is realized by changing the width of the left and/or right leads and without the use of any external gates.
A vertical resonant tunneling diode (RTD) based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ~ 6 micron. The diode exhibits high quality resonant tunneling characteristics through the electron sub-band of the quantum well at a temperature of 4.2K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green's function method, the current-voltage characteristic was simulated, showing good agreement with the measured r…
A model of sequential resonant tunneling transport between two-dimensional subbands that takes into account explicitly elastic scattering is investigated. It is compared to transport measurements performed on quantum cascade lasers where resonant tunneling processes are known to be dominating. Excellent agreement is found between experiment and theory over a large range of current, temperature and device structures.
Quantum resonant tunneling behaviors of double-barrier structures on graphene are investigated under the tight-binding approximation. The Klein tunneling and resonant tunneling are demonstrated for the quasiparticles with energy close to the Dirac points. The Klein tunneling vanishes by increasing the height of the potential barriers to more than 300 meV. The Dirac transport properties continuously change to the Schrodinger ones. It is found that the peaks of resonant tunneling approximate to the eigen-levels of graphene nanoribbons under appropriate boundary conditions. A comparison between t…
We present a synchrotron-based X-ray scattering technique which allows disentangling magnetic properties of heterogeneous systems with nanopatterned surfaces. This technique combines the nmrange spatial resolution of surface morphology features provided by Grazing Incidence Small Angle X-ray Scattering and the high sensitivity of Nuclear Resonant Scattering to magnetic order. A single experiment thus allows attributing magnetic properties to structural features of the sample; chemical and structural properties may be correlated analogously. We demonstrate how this technique shows the correlati…
We report on the resonant coupling between localized surface plasmon resonances (LSPRs) in nanostructured Ag films, and an adsorbed monolayer of Rhodamine 6G dye. Hybridization of the plasmons and molecular excitons creates new coupled polaritonic modes, which have been tuned by varying the LSPR wavelength. The resulting polariton dispersion curve shows an anticrossing behavior which is very well fit by a simple coupled-oscillator Hamiltonian, giving a giant Rabi-splitting energy of ~400 meV. The strength of this coupling is shown to be proportional to the square root of the molecular density.…
We theoretically investigate the effects of strain-induced pseudomagnetic fields on the transmission probability and the ballistic conductance for Dirac fermion transport in suspended graphene. We show that resonant tunneling through double magnetic barriers can be tuned by strain in the suspended region. The valley-resolved transmission peaks are apparently distinguishable owing to the sharpness of the resonant tunneling. With the specific strain, the resonant tunneling is completely suppressed for Dirac fermions occupying the one valley, but the resonant tunneling exists for the other valley…
We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is highly spin polarized at zero magnetic field due to the zero field splitting. Detailed modeling demonstra…
Based on the dielectric continuum model, we calculated the phonon assisted tunneling (PAT) current of general double barrier resonant tunneling structures (DBRTSs) including both symmetric and antisymmetric ones. The results indicate that the four higher frequency interface phonon modes (especially the one which peaks at either interface of the emitter barrier) dominate the PAT processes, which increase the valley current and decrease the PVR of the DBRTSs. We show that an asymmetric structure can lead to improved performance.
We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved and the fingerprints of phonon assistance in the tunneling process are seen. The latter is confirmed by detailed analysis of the tunneling rates and the modeling of the resonant tunneling contribution to the current. Moreover, fluctuations of the local structure of the DOS (LDOS) and Fermi edge singularities are observed.
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emissi…
We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.
We present a new empirical pseudopotential (EPM) calculation approach to simulate the million atom nanostructured semiconductor devices under potential bias using the periodic boundary conditions. To treat the non-equilibrium condition, instead of directly calculating the scattering states from the source and drain, we calculate the stationary states by the linear combination of bulk band method and then decompose the stationary wave function into source and drain injecting scattering states according to an approximated top of the barrier splitting (TBS) scheme based on physical insight of bal…
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantum interference effects with respect to the direction of current flow. By employing doping to counter the broken symmetry, we deterministically control the resonant transmission through GaN/AlN resonan…
The effect of an in-plane magnetic field on resonant tunneling in a symmetric GaAs/AlYGa1-YAs triple-barrier resonant tunneling TBRT structure is presented. The splitting of the resonant lines (and hence the coupling energy vs. magnetic induction) for the ground and the first excited resonant doublet shifts up in energy by increasing the magnetic induction. Each of branches in the resonant dispersion relations shows a parabolic behavior with the location of the cyclotron orbit center. It is expected that, at very high fields, the interaction with confined phonons be enhanced, due to phonon cou…
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependenc…
Resonant electronic transmission through graphene-based double barriers (wells) is studied as a function of the incident wave vector, the widths and heights (depths) of the barriers (wells), and the separation between them. Resonant features in the transmission result from resonant electron states in the wells or hole states in the barriers and strongly influence the ballistic conductance of the structures.
We measure tunneling through a single quantum level in a carbon nanotube quantum dot connected to resistive metal leads. For the electrons tunneling to/from the nanotube, the leads serve as a dissipative environment, which suppresses the tunneling rate. In the regime of sequential tunneling, the height of the single-electron conductance peaks increases as the temperature is lowered, although it scales more weekly than the conventional 1/T. In the resonant tunneling regime (temperature smaller than the level width), the peak width approaches saturation, while the peak height starts to decrease.…
Resonant tunneling through a quantum dot weakly coupled to Tomonaga-Luttinger liquids is discussed. The linear conductance due to sequential tunneling is calculated by solving a master equation for temperatures below and above the average level spacing in the dot. When the parameter g characterizing the Tomonaga-Luttinger liquid is smaller than 1/2, the resonant tunneling process is incoherent down to zero temperature. At low temperature T the height and width of the conductance peaks in the Coulomb blockade oscillations are proportional to T^{(1/g)-2} and T, respectively. The contribution fro…
We derive the quantum rate equations for an Aharonov-Bohm interferometer with two vertically coupled quantum dots embedded in each of two arms by means of the nonequilibrium Green's function in the sequential tunneling regime. Basing on these equations, we investigate time-dependent resonant tunneling under a small amplitude irradiation and find that the resonant photon-assisted tunneling peaks in photocurrent demonstrate a combination behavior of Fano and Lorentzian resonances due to the interference effect between the two pathways in this parallel configuration, which is controllable by thre…
Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic elec…
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied experimentally and modeled theoretically. When the tip is retracted, we observe resonant tunneling through the nanocrystal states without charging. This is in contrast to previous measurements on similar nanocrystals anchored to gold by linker molecules, where charging took place. Charging is regained upon reducing the tip-nanocrystal distance, making the jun…
We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable $I$-$V$ characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or non-resonant with the source and drain layers. The bistability is controlled by geometric device parameters…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
We investigate the noise properties of a GaAs/AlGaAs resonant tunneling structure at bias voltages where the current characteristic is determined by single electron tunneling. We discuss the suppression of the shot noise in the framework of a coupled two-state system. For large bias voltages we observed super-Poissonian shot noise up to values of the Fano factor $α\approx 10$.
We study theoretically the quantum size effects of a magnetic resonant tunneling diode (RTD) with a (Zn,Mn)Se dilute magnetic semiconductor layer on the spin-tunneling time and the spin polarization of the electrons. The results show that the spin-tunneling times may oscillate and a great difference between the tunneling time of the electrons with opposite spin directions can be obtained depending on the system parameters. We also study the effect of structural asymmetry which is related to the difference in the thickness of the nonmagnetic layers. It is found that the structural asymmetry can…
We consider the conductance of a one-dimensional wire interrupted by a double-barrier structure allowing for a resonant level. Using the electron-electron interaction strength as a small parameter, we are able to build a non-perturbative analytical theory of the conductance valid in a broad region of temperatures and for a variety of the barrier parameters. We find that the conductance may have a non-monotonic crossover dependence on temperature, specific for a resonant tunneling in an interacting electron system.
We investigate Andreev reflection (AR) resonant tunneling through a precessing spin which is coupled to a normal metallic lead and a superconducting lead. The formula of the AR conductance at zero temperature is obtained as a function of chemical potential and azimuthal angle of the spin precessing by using the nonequilibrium Green function method. It is found that as the local spin precesses in a weak external magnetic field at Larmor frequency $ω_l$, the AR tunneling conductance exhibits an oscillation at the frequency $2ω_l$ alone. The amplitude of AR conductance oscillation enhances with s…
The effect of resonant tunneling on magnetoresistance (MR) is studied theoretically in a double junction system. We have found that the ratio of the MR of the resonant peak current is reduced more than that of the single junction, whereas that of the valley current is enhanced depending on the change of the discrete energy-level under the change of magnetic field. We also found that the peak current-valley current (PV) ratio decreases when the junction conductance increases.
In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of NDR with high PVR at low biases. Our finding is important since beside the other potential applications of the graphene, proposes implementation of the graphene based superlattice in electronic devices such as resonant tunneling diode and filters.
Magnetization measurements of a truly axial symmetry Mn12-tBuAc molecular nanomagnet with a spin ground state of S = 10 show resonance tunneling. This compound has the same magnetic anisotropy as Mn12-Ac but the molecules are better isolated and the crystals have less disorder and a higher symmetry. Hysteresis loop measurements at several temperatures reveal a well-resolved step fine-structure which is due to level crossings of excited states. All step positions can be modeled by a simple spin Hamiltonian. The crossover between thermally assisted and pure quantum tunneling can be investigated …
Phonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry condition in this space that can strongly enhance the emission of longitudinal optical phonons. For devices with thin emitter barriers this is achieved by a wider collector's barrier.
Transport through molecular magnets is studied in the regime of strong coupling to the leads. We consider a resonant-tunneling model where the electron spin in a quantum dot or molecule is coupled to an additional local, anisotropic spin via exchange interaction. The two opposite regimes dominated by resonant tunneling and by Kondo transport, respectively, are considered. In the resonant-tunneling regime, the stationary state of the impurity spin is calculated for arbitrarily strong molecule-lead coupling using a master-equation approach, which treats the exchange interaction perturbatively. W…
We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence exper…
We have developed a quantitative theory of resonant tunneling of magnetic flux between discrete macroscopically distinct quantum states in SQUID systems. The theory is based on the standard density-matrix approach. Its new elements include the discussion of the two different relaxation mechanisms that exist for the double-well potential, and description of the ``photon-assisted'' tunneling driven by external rf radiation. It is shown that in the case of coherent flux dynamics, rf radiation should lead to splitting of the peaks of resonant flux tunneling, indicating that the resonant tunneling …
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to $e^2/2π\hbar$. Away from the resonance we clearly observe the co-tunneling current which in contrast to the normal-metal transistor varies linearly with the bias voltage.
Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant tunneling. Valley degeneracy is broken in the presence of an external field, allowing the selective filtering of the valley and chirality of the states assisting in the resonant tunneling. Asymmetric str…
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer dev…
We present fermionic model based on symmetric resonant tunneling heterostructure, which demonstrates spontaneous symmetry breaking in respect to combined operations of space inversion (P) and time reversal (T). PT-symmetry breaking manifests itself in resonance coalescence (collapse of resonances). We show that resonant energies are determined by eigenvalues of auxiliary pseudo-Hermitian PT-invariant Hamiltonian.
We report on the observation of Fermi edge enhanced resonant tunneling transport in a II-VI semiconductor heterostructure. The resonant transport through a self assembled CdSe quantum dot survives up to 45 K and probes a disordered two dimensional (2D) like emitter which dominates the magnetic field dependence of the transport. An enhancement of the tunnel current through many particle effects is clearly observable, even without an applied magnetic field. Additional fine structure in the tunneling current suggests that while conventional Fermi edge singularity theory successfull reproduces the…
