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arXiv 0705.1204cond-mat.mes-hallcond-mat.mtrl-sci
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石墨烯中库仑散射的电子-空穴产生率和迁移率

Electron-Hole Generation and Recombination Rates for Coulomb Scattering in Graphene

Farhan Rana

摘要:

我们计算了石墨烯中库仑散射(俄歇复合和碰撞电离)的电子-空穴产生和复合率。石墨烯中的导带和价带色散关系以及能量和动量守恒要求限制了库仑散射的相空间,使得对于小于$10^{12}$ cm $^{-2}$的电子-空穴密度,电子-空穴复合时间可以远长于1 ps。

英文摘要:

We calculate electron-hole generation and recombination rates for Coulomb scattering (Auger recombination and impact ionization) in Graphene. The conduction and valence band dispersion relation in Graphene together with energy and momentum conservation requirements restrict the phase space for Coulomb scattering so that electron-hole recombination times can be much longer than 1 ps for electron-hole densities smaller than $10^{12}$ cm$^{-2}$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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