We present scanning tunneling microscopy (STM) images of single-layer graphene crystals examined under ultrahigh vacuum conditions. The samples, with lateral dimensions on the micron scale, were prepared on a silicon dioxide surface by direct exfoliation of single crystal graphite. The single-layer films were identified using Raman spectroscopy. Topographic images of single-layer samples display the honeycomb structure expected for the full hexagonal symmetry of an isolated graphene monolayer. The absence of observable defects in the STM images is indicative of the high quality of these films. Crystals comprised of a few layers of graphene were also examined. They exhibited dramatically different STM topography, displaying the reduced three-fold symmetry characteristic of the surface of bulk graphite.
We investigate electron transport through a finite two dimensional mesoscopic periodic potential, consisting of an array of lateral quantum dots with electron density controlled by a global top gate. We observe a transition from an insulating state at low bias voltages to a conducting state at high bias voltages. The insulating state shows simply activated temperature dependence, with strongly gate voltage dependent activation energy. At low temperatures the transition between the insulating and conducting states becomes very abrupt and shows strong hysteresis. The high-bias behavior suggests …
Excess conductance fluctuations with peculiar temperature-dependence from 1.4 to 250 K were observed in curved nano-graphite sheets with an electrode gap length of 300 and 450 nm, whereas the conductance fluctuation is greatly suppressed above 4.2 K when the electrode gap length increases to 800 and 1000 nm. The former is discussed in the context of the presence of a small energy bandgap in the nano-graphite sheets, while the latter is attributed to the crossover from coherent transport to diffusive transport regime.
We investigate the effect of a microwave field on a confined two dimensional electron gas which contains an insulating region comparable to the Fermi wavelength. The insulating region causes the electron wave function to vanish in that region. We describe the insulating region as a static vortex, which gives rise to non-commuting kinetic momenta. The two-dimensional electron gas is described as a fluid with a density which obeys the Fermi-Dirac statistics. The presence of the confinement potential gives rise to vanishing kinetic momenta in the vicinity of the classical turning points. As a res…
We have investigated the local magneto-transport in high-quality 2D electron systems at low carrier densities. The positive magneto-resistance in perpendicular magnetic field in the strongly insulating regime has been measured to evaluate the spatial concentration of localized states within a mesoscopic region of the samples. An independent measurement of the electron density within the same region shows an unexpected correspondence between the density of electrons in the metallic regime and that of the localized states in the insulating phase. We have argued that this correspondence manifests…
Two fundamental extensions to the function of previously described fully field effect two-dimensional (2D) electron heterostructures are presented: First, using the same basic heterostructure design of lithographically defined contacts overlain by both an insulating layer and top-gate employed for electron systems, appropriate contact material allows a high mobility 2D hole layer to be populated. Second, a simple method for producing mesoscopic structures in these devices is presented in which small-scale metallic patterns are placed on the heterostructure under the insulating and global gate …
We determine the wavefunctions of electrons bound to a positively charged mesoscopic metallic cluster covered by an insulating surface layer. The radius of the metal core and the thickness of the insulating surface layer are of the order of a couple of angstroems. We study in particular the electromagnetic decay of externally located electrons into unoccupied internally located states which exhibits a resonance behaviour. This resonance structure has the consequence that the lifetime of the `mesoscopic atoms' may vary by up to 6 orders of magnitude depending on the values of the parameters (fr…
The ground state of a two-dimensional, harmonically confined mesoscopic assembly of up to thirty polar molecules is studied by computer simulations. As the strength of the confining trap is increased, clusters evolve from superfluid, to supersolid, to insulating crystals. For strong confinement, the crystalline structure can be predicted based on classical energetics. However, clusters of specific numbers of particles (i.e., N=12 and N=19) display a {\it non-classical crystalline structure}, stabilized by quantum effects, in an intermediate range of confinement strength. In these cases, coexis…
We investigate the transport properties of neutral, fermionic atoms passing through a one-dimensional quantum wire containing a mesoscopic lattice. The lattice is realized by projecting individually controlled, thin optical barriers on top of a ballistic conductor. Building an increasingly longer lattice, one site after another, we observe and characterize the emergence of a band insulating phase, demonstrating control over quantum-coherent transport. We explore the influence of atom-atom interactions and show that the insulating state persists as contact interactions are tuned from moderately…
We have applied the Numerical Renormalization Group method to study a mesoscopic system consisting of two samples of metal separated by an insulating barrier, with nanometer dimensions, which allows the tunnelling of a single electron from one to the other side of the junction. The junction is represented by a generalized orthodox model, taking into account the electronic scattering interaction due the hole and the tunnelling electrons, localized in the source and in the drain electrode, respectively. We have calculated the static properties (charge transference, charge average, quadractic cha…
Recent experiments have demonstrated that neutral graphene sheets have an insulating ground state in the presence of an external magnetic field. We report on a $π$-band tight-binding-model Hartree-Fock calculation which examines the competition between distinct candidate insulating ground states. We conclude that for graphene sheets on substrates the ground state is most likely a field-induced spin-density-wave, and that a charge density wave state is possible for suspended samples. Neither of these density-wave states support gapless edge excitations.
The fate of the low-temperature conductance at the charge-neutrality (Dirac) point in a single sheet of graphene is investigated down to 20 mK. As the temperature is lowered, the peak resistivity diverges with a power-law behavior and becomes as high as several Megohms per square at the lowest temperature, in contrast with the commonly observed saturation of the conductivity. As a perpendicular magnetic field is applied, our device remains insulating and directly transitions to the broken-valley-symmetry, nu=0 quantum Hall state, indicating that the insulating behavior we observe at zero magne…
We study conductance fluctuations in a two-dimensional electron gas as a function of chemical potential (or gate voltage) from the strongly insulating to the metallic regime. Power spectra of the fluctuations decay with two distinct exponents (1/v_l and 1/v_h). For conductivity $σ\sim 0.1 e^{2}/h$, we find a third exponent (1/v_i) in the shortest samples, and non-monotonic dependence of v_i and v_l on σ. We study the dependence of v_i, v_l, v_h, and the variances of corresponding fluctuations on σ, sample size, and temperature. The anomalies near $σ\simeq 0.1 e^{2}/h$ indicate that the dielect…
The role of defect-induced zero-energy modes on charge transport in graphene is investigated using Kubo and Landauer transport calculations. By tuning the density of random distributions of monovacancies either equally populating the two sublattices or exclusively located on a single sublattice, all conduction regimes are covered from direct tunneling through evanescent modes to mesoscopic transport in bulk disordered graphene. Depending on the transport measurement geometry, defect density, and broken sublattice-symmetry, the Dirac point conductivity is either exceptionally robust against dis…
Using typical experimental techniques it is difficult to separate the effects of carrier density and disorder on the superconducting transition in two dimensions. Using a simple fabrication procedure based on metal layer dewetting, we have produced graphene sheets decorated with a non-percolating network of nanoscale tin clusters. These metal clusters both efficiently dope the graphene substrate and induce long-range superconducting correlations. This allows us to study the superconducting transition at fixed disorder and variable carrier concentration. We find that despite structural inhomoge…
The tunneling conductances of a quantum point contact and a magnetized atom adsorbed on an insulating layer above a metallic substrate are obtained by considering the coherent transport of the entangled and nonentangled Kondo singlets, and these are compared with the experimental results. Spins of the entangled Kondo singlet flow unidirectionally in a sequential up-and-down manner. This transport does not follow linear response theory. The nonentangled Kondo singlet performs resonant tunneling through a coherent transport channel and yields coherent side peaks at a finite bias. The coherent tr…
We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its $ν=1$ value, $h/e^{2}$. This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity i…
For two decades, two-dimensional carbon species, including graphene, have been the core of research in pursuing next-generation logic applications beyond the silicon technology. Yet the opening of a gap in a controllable range of doping, whilst keeping high conductance outside of this gapped state, has remained a grand challenge in them thus far. Here we show that, by bringing Bernal-stacked bilayer graphene in contact with an anti-ferromagnetic insulator CrOCl, a strong insulating behavior is observed in a wide range of positive total electron doping $n_\mathrm{tot}$ and effective displacemen…
Due to Klein tunneling, electrostatic potentials are unable to confine Dirac electrons. We show that it is possible to confine massless Dirac fermions in a monolayer graphene sheet by inhomogeneous magnetic fields. This allows one to design mesoscopic structures in graphene by magnetic barriers, e.g. quantum dots or quantum point contacts.
We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally,…
We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.
We propose two coupled electron-hole sheets of few-layer graphene as a new nanostructure to observe superfluidity at enhanced densities and enhanced transition temperatures. For ABC stacked few-layer graphene we show that the strongly correlated electron-hole pairing regime is readily accessible experimentally using current technologies. We find for double trilayer and quadlayer graphene sheets spatially separated by a nano-thick hexagonal boron-nitride insulating barrier, that the transition temperature for electron-hole superfluidity can approach temperatures of 40 K.
Low-field magnetoresistance is ubiquitous in low-dimensional metallic systems with high resistivity and well understood as arising due to quantum interference on self-intersecting diffusive trajectories. We have found that in graphene this weak-localization magnetoresistance is strongly suppressed and, in some cases, completely absent. This unexpected observation is attributed to mesoscopic corrugations of graphene sheets which cause a dephasing effect similar to that of a random magnetic field.
The electronic properties of a graphene sheet with attached hydrogen atoms is studied using a modified Falicov-Kimball model on the honeycomb lattice. It is shown that in the ground state this system separates into two phases: fully hydrogenated graphene (graphane) and hydrogen-free graphene. The graphene-graphane boundary acquires a positive interface tension. Therefore, the graphene-graphane interface becomes a straight line, slightly rippled by thermal fluctuations. A smooth interface may be useful for the fabrication of mesoscopic graphene-based devices.
We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon …
Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of adsorbates, or on multilayered structures. These systems have exhibited novel tunable electronic properties such as bandgap- engineering, reversible metal/insulating transition or supramolecular spintronics. Tunable superconductivity is expected as well, but experimental realization is lacking. Here, we show experiments based on me tal/graphene hybrid compo…
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductan…
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting many-body effects. Results are presented using physical parameters that enable comparison of the theory with recently reported experimental results. Observed resonant tunneling and negative differential resistance in the current-voltage characteristics are explained in terms of the electrostatically-induced band gap, gate voltage modulation, density of states near the band edge, and resonances with the upper sub-ban…
Transmission electron beams (TEBs) have long been used to study and manipulate materials at nanometer scales. In the late 1970's, Cherns demonstrated surface pitting in Au films upon exposure to a 1MeV TEB and observed crystal dislocations in quartz. Soon after, electron beam irradiation was used to drill nanoholes and lines in NaCl crystals, alumina sheets, CaF2 and MgO. More recent examples include the drilling of nanoholes in silicon, stainless steel, and in Si3N4 and SiO2 membranes. In this Letter we demonstrate a new and highly flexible application of TEB-based fabrication to produce intr…
Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1$^\circ$, features isolated flat electronic bands that host a rich phase diagram of correlated insulating, superconducting, ferromagnetic, and topological phases. The origins of the correlated insulators and superconductivity, and the interplay between them, are particularly elusive. Both states have been previously observed only for angles within $\pm0.1^\circ$ from the magic-angle value and occur in adjacent or overlapping electron density ranges; nevertheless, it is still unclear how the two states are rela…
We show that in AB stacked bilayer graphene low energy excitations around the semimetallic points are described by massless, four dimensional Dirac fermions. There is an effective reconstruction of the 4 dimensional spacetime, including in particular the dimension perpendicular to the sheet, that arises dynamically from the physical graphene sheet and the interactions experienced by the carriers. The effective spacetime is the Eisenhart-Duval lift of the dynamics experienced by Galilei invariant Lévy-Leblond spin $\frac{1}{2}$ particles near the Dirac points. We find that changing the intrinsi…
Pure Topological Insulating materials preserve a unique electronic state comprising of bulk insulating gap and conducting surface states. Here we use bulk Bi2Se3 single crystals possessing Se vacancy defects as a prototype topological insulator (TI) material for exploring the effect of non-magnetic disorder on the conducting properties of TIs. We employ a sensitive, non-contact, mutual inductance based technique for measuring the surface and bulk contribution to electrical conductivity in the TI. We discern the different contributions, by observing that predominant surface electrical conductio…
We apply Laughlin's gauge argument to analyze the $ν=0$ quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying $ν=0$ quantized Hall effect. We argue that this $ν=0$ graphene quantum Hall state is qualitati…
We study the edge spectrum of twisted sheets of single layer and bilayer graphene in cases where the continuum model predicts a valley Chern insulator -- an insulating state in which the occupied moiré mini-bands from each valley have a net Chern number, but both valleys together have no net Chern number, as required by time reversal symmetry. In a simple picture, such a state might be expected to have chiral valley polarized counter-propagating edge states. We present results from exact diagonalization of the tight-binding model of commensurate structures in the ribbon geometry. We find that …
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room te…
We have utilized time-domain magneto-terahertz spectroscopy to investigate the low frequency optical response of topological insulator Cu$_{0.02}$Bi$_2$Se$_3$ and Bi$_2$Se$_3$ films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu$_{0.02}$Bi$_2$Se$_3$ induces a true bulk insulator with only a \textit{single} type of conduction with total sheet carrier dens…
The understanding of strongly-correlated materials, and in particular unconventional superconductors, has puzzled physicists for decades. Such difficulties have stimulated new research paradigms, such as ultra-cold atom lattices for simulating quantum materials. Here we report on the realization of intrinsic unconventional superconductivity in a 2D superlattice created by stacking two graphene sheets with a small twist angle. For angles near $1.1^\circ$, the first `magic' angle, twisted bilayer graphene (TBG) exhibits ultra-flat bands near charge neutrality, which lead to correlated insulating…
We propose a model for nanoscale supercapacitor consisting of two-dimensional insulating BN layers placed between two commensurate and metallic graphene layers. First-principles Density Functional calculations of structure optimized total energy and self-consistent field potential performed on these nanoscale capacitors for different levels of charging and different number of BN layers mark the values of capacitance per unit mass, which are larger than those measured values for the supercapacitors made from other carbon based materials. Our theoretical study also compares results obtained for …
