薄InAs层在InxAl1-xAs变质缓冲层上生长的结构与输运性质
Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
AI总结：
本研究在InxAl1-xAs变质缓冲层上外延生长了12.5至500 nm厚的薄InAs层，利用高分辨率X射线衍射和范德堡法测量，证实了高晶体质量及室温输运性质，并量化了表面、体和界面的贡献，为超导固态量子器件提供了可扩展方案。
摘要：
砷化铟是一种III-V族半导体，具有低电子有效质量、小带隙、强自旋轨道耦合和大g因子。这些性质及其表面费米能级钉扎在导带中，使InAs成为开发超导固态量子器件的良好候选材料。在此，我们报告了通过分子束外延在InxAl1-xAs变质缓冲层上生长的厚度从12.5 nm到500 nm的极薄InAs层的外延生长。与InAs衬底不同，这些缓冲层在低温下具有绝缘的优点，这允许在同一晶圆上进行多种器件操作，从而使该方法具有可扩展性。通过高分辨率X射线衍射研究了InAs层的结构性质，证明了InAs层的高晶体质量。此外，在室温下以范德堡构型测量了其输运性质，如总载流子浓度和薄层载流子浓度、薄层电阻以及载流子迁移率。采用一个简单的导电模型来量化表面、体和界面对外加总载流子浓度和迁移率的贡献。
英文摘要：
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1-xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.
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