MeV C和He注入单晶金刚石中形成埋置导电微通道
Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation
摘要：
如在先前的工作中所证明的，通过具有梯度厚度的掩模用MeV离子微束注入允许在金刚石中形成导电微通道，所述导电微通道以可控的深度嵌入绝缘基质中[P. Olivero等人，钻石关系Mater. 18（5-8），870-876（2009）]。在目前的工作中，我们报告的系统的电特性的微通道作为几个注入条件的函数，即：离子种类和能量，注入注量。在室温下用两点探针台测量了埋沟的电流-电压（IV）特性。重要的参数，如薄层电阻和IV幂律趋势的特征指数（α）表示为损伤密度的函数，在不同的注入条件下获得的结果之间具有令人满意的兼容性。
英文摘要：
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.
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