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arXiv 0705.0672physics.ins-det
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基于硅工艺的光电倍增管新概念

Towards a new concept of photomultiplier based on silicon technology

S. Priviteraa, S. Tudisco, L. Lanzano, F. Musumeci, A. Pluchino, A. Scordino, A. Campisi, L. Cosentino, P. Finocchiaro, G. Condorelli, M. Mazzillo, S. Lombardo, E. Sciacca

摘要:

为了建立基于硅技术的光电倍增管的新概念,由ST微电子公司制造的新一代单光子雪崩二极管(SPAD)的5x 5阵列的设计和表征已经被执行。在几种实验条件下对SPAD-STM器件的单光子灵敏度、暗噪声和时间分辨率进行了评价。此外,还对多元素多重积分的影响及其共同读出的研究进行了深入的探讨。

英文摘要:

In order to build a new concept of photomultiplier based on silicon technology, design and characterization of 5x5 arrays of a new generation of single photon avalanche diodes (SPAD) manufactured by ST-Microelectronics have been performed. Single photons sensitivity, dark noise and timing resolution of the SPAD- STM devices in several experimental conditions have been evaluated. Moreover, the effects arising from the multiple integration of many elements and the study of their common read-out have been deeply investigated.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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