arXivDaily arXiv每日学术速递 周一至周五更新
arXiv quant-ph/0608170quant-ph
收藏

用于量子光刻的高增益光参量放大器产生的光的量子态

Quantum States of Light Produced by a High-Gain Optical Parametric Amplifier for Use in Quantum Lithography

Girish S. Agarwal, Kam Wai Chan, Robert W. Boyd, Hugo Cable, Jonathan P. Dowling

摘要:

本文从理论上分析了非种子光参量放大器(OPA)作为纠缠光子源在量子光刻中的应用。我们首先研究了双光子吸收体的激发速率对离开OPA的光的强度的依赖性。我们发现,只有当输出光束弱到每模包含少于一个光子时,速率才与强度呈线性关系。我们还研究了使用的N-光子吸收器为任意N作为记录介质,以使用这样的光源。我们发现,随着N值的增加,干涉图样的对比度和条纹最大值的锐度趋于增加,但条纹的密度和极限分辨率并不随N的增加而增加。我们的结论是,一个非种子OPA激发N-光子吸收体的输出提供了一个有吸引力的系统,在其中进行量子光刻。

英文摘要:

We present a theoretical analysis of the properties of an unseeded optical parametic amplifier (OPA) used as the source of entangled photons for applications in quantum lithography. We first study the dependence of the excitation rate of a two-photon absorber on the intensity of the light leaving the OPA. We find that the rate depends linearly on intensity only for output beams so weak that they contain fewer than one photon per mode. We also study the use of an N-photon absorber for arbitrary N as the recording medium to be used with such a light source. We find that the contrast of the interference pattern and the sharpness of the fringe maxima tend to increase with increasing values of N, but that the density of fringes and thus the limiting resolution does not increase with N. We conclude that the output of an unseeded OPA exciting an N-photon absorber provides an attractive system in which to perform quantum lithography.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑