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arXiv quant-ph/0607114quant-ph
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量子光刻中分辨率增强与多光子吸收率的关系

On the Relationship between Resolution Enhancement and Multiphoton Absorption Rate in Quantum Lithography

Mankei Tsang

摘要:

量子光刻的提议[Boto等人,物理修订信函85,2733(2000)]通过严格的形式主义进行研究。它表明,相反,Boto等人。“NOON”量子态的多光子吸收率实际上低于其他参数相同的经典态。量子光刻的概念验证实验[D'Angelo等人,物理修订版信函87,013602(2001)]也根据所提出的形式主义进行了分析,并且实验表明具有降低的多光子吸收率,以便准确地模拟量子光刻。最后,研究了利用光的联合高斯量子态的量子光刻,以说明分辨率增强和多光子吸收率之间的权衡。

英文摘要:

The proposal of quantum lithography [Boto et al., Phys. Rev. Lett. 85, 2733 (2000)] is studied via a rigorous formalism. It is shown that, contrary to Boto et al.'s heuristic claim, the multiphoton absorption rate of a ``NOON'' quantum state is actually lower than that of a classical state with otherwise identical parameters. The proof-of-concept experiment of quantum lithography [D'Angelo et al., Phys. Rev. Lett. 87, 013602 (2001)] is also analyzed in terms of the proposed formalism, and the experiment is shown to have a reduced multiphoton absorption rate in order to emulate quantum lithography accurately. Finally, quantum lithography by the use of a jointly Gaussian quantum state of light is investigated, in order to illustrate the trade-off between resolution enhancement and multiphoton absorption rate.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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