利用高通量抗损耗纠缠态的亚瑞利光刻
Sub-Rayleigh lithography using high flux loss-resistant entangled states of light
摘要：
量子光刻技术使用脆弱的、实验上具有挑战性的光纠缠态实现相位超分辨率。我们提出了一个可扩展的方案，用于创建比经典可实现的特征更窄的特征，减少了量子资源的使用，从而增强了对损失的抵抗力。该方案是一种利用SPDC纠缠态与强相干光的混合物实现干涉光刻的方法。我们测量最多四个光子模仿多光子吸收的巧合。结果表明，相对于最好的类似经典方案，仅使用10%的非经典光创建NOON状态所需的干涉条纹的缩窄高达30%。
英文摘要：
Quantum lithography achieves phase super-resolution using fragile, experimentally challenging entangled states of light. We propose a scalable scheme for creating features narrower than classically achievable, with reduced use of quantum resources and consequently enhanced resistance to loss. The scheme is an implementation of interferometric lithography using a mixture of an SPDC entangled state with intense classical coherent light. We measure coincidences of up to four photons mimicking multiphoton absorption. The results show a narrowing of the interference fringes of up to 30% with respect to the best analogous classical scheme using only 10% of the non-classical light required for creating NOON states.
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