多层光罩原子纳米光刻的粒子光学分析

近共振光掩模原子光刻的量子优化分析

Atom Lithography with Near-Resonant Light Masks: Quantum Optimization Analysis

本文研究了二能级原子与近共振驻波光场的最佳聚焦问题，采用经典和量子两种方法。聚焦装置的操作被认为是薄透镜和厚透镜制度中原子的非线性空间压缩。结果表明，与远失谐光场相比，近共振驻波聚焦原子的背景减小。对于某些参数，量子原子分布显示出比经典原子分布更好的局域化。通过量子蒙特卡罗波函数模拟技术，包括了自发发射效应。我们调查在何种程度上非绝热和自发发射效应限制可实现的最小尺寸的沉积结构。

通过灰度硬掩模光刻在碳化硅中可规模化制造半球形固体浸没透镜

Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography

该研究提出一种结合灰度光刻与硬掩模的新工艺，在碳化硅上制造半径5微米的近半球形固体浸没透镜，具有高可扩展性、CMOS兼容性，并可通过干法蚀刻调节纵横比，为聚焦离子束铣削提供低成本、高产量替代方案。

Realistic mask generation for matter-wave lithography via machine learning

Fast production of large area patterns with nanometre resolution is crucial for the established semiconductor industry and for enabling industrial-scale production of next-generation quantum devices. Metastable atom lithography with binary holography masks has been suggested as a higher resolution/low-cost alternative to the current state of the art: extreme ultraviolet (EUV) lithography. However, it was recently shown that the interaction of the metastable atoms with the mask material (SiN) leads to a strong perturbation of the wavefront, not included in existing mask generation theory, which…

基于相干布居捕获的亚纳米级原子局域化、光刻和显微镜分辨率

Sub-nanoscale Resolution for Atom Localization, Lithography and Microscopy via Coherent Population Trapping

我们提出了一种基于相干布居捕获的方案，以获得亚纳米级的原子局域化，显微镜和光刻分辨率。我们的方法采用三能级原子耦合到振幅调制的探测场和空间相关的驱动场。探测场的调制使我们能够利用通常与电磁感应透明相关的陡峭色散，并提供了一种仅使用光场实现亚纳米分辨率的途径。我们说明了该技术的应用领域的显微镜和光刻，并显示如何多级计划提供进一步提高分辨率的可能性。

An atom passing through a hole in a dielectric membrane: Impact of dispersion forces on mask-based matter-wave lithography

Fast, large area patterning of arbitrary structures down to the nanometre scale is of great interest for a range of applications including the semiconductor industry, quantum electronics, nanophotonics and others. It was recently proposed that nanometre-resolution mask lithography can be realised by sending metastable helium atoms through a binary holography mask consisting of a pattern of holes. However, these first calculations were done using a simple scalar wave approach, which did not consider the dispersion force interaction between the atoms and the mask material. To access the true pot…

芯片上光刻术用于超导量子比特

On-chip stencil lithography for superconducting qubits

本文提出了一种用于超导量子比特Josephson结制备的无机SiO₂/Si₃N₄芯片光刻掩模，解决了传统有机光刻胶的局限性，并展示了其在超导量子器件中的兼容性。