原子穿过介质膜中的孔：色散力对基于掩模的物质波光刻的影响
An atom passing through a hole in a dielectric membrane: Impact of dispersion forces on mask-based matter-wave lithography
摘要：
任意结构的快速、大面积图案化低至纳米尺度对于包括半导体工业、量子电子学、纳米光子学等的一系列应用是非常感兴趣的。最近有人提出，纳米分辨率掩模光刻可以通过发送亚稳态氦原子通过由孔图案组成的二元全息掩模来实现。然而，这些最初的计算是使用简单的标量波方法完成的，该方法没有考虑原子和掩模材料之间的色散力相互作用。为了了解这个想法的真正潜力，有必要了解这种相互作用如何影响原子。本文从理论上研究了原子与含孔介质膜之间的色散力相互作用。我们看看亚稳态和基态氦，使用实验现实的波长（0.05-1纳米）和膜厚度（5-50纳米）。我们发现，有效空穴半径减少约1-7 nm的亚稳态氦和0.5-3.5 nm的基态氦。正如预期的那样，厚膜和慢原子的减少最大。
英文摘要：
Fast, large area patterning of arbitrary structures down to the nanometre scale is of great interest for a range of applications including the semiconductor industry, quantum electronics, nanophotonics and others. It was recently proposed that nanometre-resolution mask lithography can be realised by sending metastable helium atoms through a binary holography mask consisting of a pattern of holes. However, these first calculations were done using a simple scalar wave approach, which did not consider the dispersion force interaction between the atoms and the mask material. To access the true potential of the idea, it is necessary to access how this interaction affects the atoms. Here we present a theoretical study of the dispersion force interaction between an atom and a dielectric membrane with a hole. We look at metastable and ground state helium, using experimentally realistic wavelengths (0.05-1 nm) and membrane thicknesses (5-50 nm). We find that the effective hole radius is reduced by around 1-7 nm for metastable helium and 0.5-3.5 nm for ground-state helium. As expected, the reduction is largest for thick membranes and slow atoms.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
