扩展区域上的亚波长光刻
Sub-wavelength lithography over extended areas
摘要：
我们展示了一个系统的方法，以亚波长分辨率光刻图像形成的薄膜覆盖面积大于波长的平方。例如，可以通过使用特定的$2 M$ -光子、多模纠缠态（其中$N < M$）和双折射板组来制作具有$λ/[2(N+1)]$的特征尺寸分辨率的光刻图案.通过准备统计混合的这种状态，可以在占据具有$L=2^{M-N-1}$波长的边的正方形的$(N+1) 2^{M-N} \times (N+1) 2^{M-N}$像素网格上形成任何像素图案。因此，在曝光面积、最小光刻特征尺寸分辨率和用于曝光的光子数量之间存在折衷。我们还表明，所提出的方法将工作，即使在非理想的条件下，虽然有点较差的性能。
英文摘要：
We demonstrate a systematic approach to sub-wavelength resolution lithographic image formation on films covering areas larger than a wavelength squared. For example, it is possible to make a lithographic pattern with a feature size resolution of $λ/[2(N+1)]$ by using a particular $2 M$-photon, multi-mode entangled state, where $N < M$, and banks of birefringent plates. By preparing a statistically mixed such a state one can form any pixel pattern on a $(N+1) 2^{M-N} \times (N+1) 2^{M-N}$ pixel grid occupying a square with a side of $L=2^{M-N-1}$ wavelengths. Hence, there is a trade-off between the exposed area, the minimum lithographic feature size resolution, and the number of photons used for the exposure. We also show that the proposed method will work even under non-ideal conditions, albeit with somewhat poorer performance.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
