R. L. Bates, C. Da'Via, V. O'Shea, A. Pickford, C. Raine, K. M. Smith
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
继续探索
Radiation damage effects on detectors and eletronic devices in harsh radiation environment
本文讨论太空、放疗和高能物理对撞机等恶劣辐射环境中的辐射损伤问题，强调应依据不同技术对辐射场的耐受能力进行选型与防护，以避免科学任务受损或危害患者健康。
Using a 20 MeV linear accelerator, we investigate the effects of electromagnetic radiation on the optical transparency of F8 lead glass. Specifically, we measure the change in attenuation length as a function of radiation dose. Comparing our results to similar work that utilized a proton beam, we conclude that F8 lead glass is more susceptible to proton damage than electron damage.
Kinetics of radiation damage of the PWO crystals under irradiation and recovery were studied. Crystals were irradiated with dose corresponding to average one expected in the electromagnetic calorimeter (working dose irradiation). Radiation damage and recovery were monitored through measurements of PWO optical transmission. An approach is proposed which allows evaluating the influence of the PWO crystals properties on the statistical term in the energy resolution of the electromagnetic calorimeter. The analysis also gives important information about the nature of the radiation damage mechanism …
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Cur…
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $Φ$ = 5e13 cm$^{-2}$. The cell has a pitch of 15 $μ$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_\mathit{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U^{IV}_\mathit{bd}$ was extracted and compared to th…
Hamamatsu photomultiplier tubes (PMT) and various PMT window materials were exposed to gamma irradiation. Tests were performed with absorbed doses of 1 krad and 120 krad. Initial recommendations on PMT types to use in the BTeV electromagnetic calorimeter are stated.
TCAD Simulations of Radiation Damage in 4H-SiC
本文提出在TCAD工具中建模4H-SiC辐射损伤的方法，通过验证框架并仿真中子辐照探测器，成功复现电容与正向电流随注量变化的测量结果，并用空间电荷区机制解释了电流下降现象。
Cs$_2$LiYCl$_6$:Ce$^{3+}$ (CLYC) is a new scintillator that is an attractive option for applications requiring the ability to detect both gamma rays and neutrons within a single volume. It is therefore of interest in applications that require low size, weight, or power, such as space applications. The radiation environment in space can over time damage the crystal structure of CLYC, leading to reduced performance. We have exposed 2 CLYC samples to 800 MeV protons at the Los Alamos Neutron Science Center, one to approximately 10 kRad and one to approximately 100 kRad. We measured the pulse shap…
Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.
Tracking radiation damage of Euclid VIS detectors after 1 year in space
本文利用trap pumping时钟技术跟踪Euclid VIS探测器在太空运行一年后的CCD辐射损伤状态与演化，为辐射损伤校正提供依据。
The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full under…
The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed …
The absorption length, $λ_{abs}$, of light with wavelengths between 0.95 and 1.30$~μ$m in silicon irradiated with 24$~$GeV/c protons to 1$~$MeV neutron equivalent fluences between 0 and $8.6 \times 10^{15}~$cm$^{-2}$ has been measured. It is found that $λ_{abs}$ decreases with fluence due to radiation-induced defects. A phenomenological parametrisation of the radiation-induced change of $λ_{abs}$ as a function of wavelength and neutron equivalent fluence at room temperature is given. The observation of the decrease of $λ_{abs}$ with irradiation is confirmed by edge-TCT measurements on irradiat…
Radiation damage studies of silicon photomultipliers for the CMS MIP Timing Detector
研究不同单元尺寸的Hamamatsu SiPM在反应堆中子辐照后的性能变化，分析击穿电压、信号幅度、暗电流和噪声等参数。
Study on degradation of VUV-sensitivity of MPPC for liquid xenon scintillation detector by radiation damage in MEG II experiment
针对MEG II实验液氙探测器中MPPC在高强度μ子束下的VUV灵敏度退化问题，研究发现辐射损伤集中于MPPC表面且热退火可使光子探测效率恢复，为相关探测器的辐射损伤评估与修复提供了依据。
Quartz capillary tube/fibers have been filled with anthracene by a melt and vacuum inbibition process to fabricate a scintillating core fiber. Other polcyclic aromatic hydrocarbons(PAH), such as p-Terphenyl (pTP), stilbene or naphthalene are also well-suited to scintillating/shifting fiber cores. The resulting scintillating core with quartz cladding capillary fibers (250-750 micron cores) had a high specific light output when tested with muons (8 p.e. per MIP). These PAH core quartz capillary cladding scintillating/shifting optical fibers have the potential of high radiation resistance, fast r…
The effect of radiation damage on the light yield and uniformity of candidate plastic scintillator tiles for the CMS hadron calorimeter upgrade
研究了辐射损伤对CMS强子量能器升级候选塑料闪烁体瓦片的影响，测量了受44 kGy辐照后不同形状瓦片的能量谱、位置效率及光产额，发现光产额均降低约50%，且替代形状瓦片的光收集均匀性显著下降。
We have investigated the effects caused by proton-induced radiation damage on Multi-Pixel Photon Counter (MPPC), a pixelized photon detector developed by Hamamatsu Photonics. The leakage current of irradiated MPPC samples linearly increases with total irradiated doses due to radiation damage, which is not completely recovered even after a year from the irradiation. No significant change has been observed in the gains at least up to 8.0 Gy ($9.1\times10^7$ n/mm$^2$ in 1 MeV neutron equivalent fluence, $Φ_{\rm eq}$). The device has completely lost its photon-counting capability due to baseline f…
Measurements and simulations of X-ray radiation damage effects on CNM n-type 4H-SiC MOS capacitors
通过实验和TCAD模拟研究X射线辐射对n型4H-SiC MOS电容器的表面损伤，建立剂量依赖的表面模型并验证其有效性。
Stability and photometric accuracy of CMOS image sensors in space: Radiation damage, surface charge and quantum confinement in silicon detectors
本文分析辐射引起的表面电荷变化对硅成像探测器稳定性和测光精度的影响，以评估对未来NASA任务（如宜居世界天文台）的启示。
The current understanding of radiation tollerance of Silicon Photomultipliers (SiPMs) is reviewd. Radiation damage in silicon sensors is briefly introduced, surface and bulk effects are separately addressed. Results on the operation of irradiated SiPMs with X-ray, gamma, electron, proton and neutron sources are presented. The most critical effect of radiation on SiPMs is the increase of dark count rate, which makes it impossible to resolve signals generated by a single photon from the noise. Methods to characterize irradiated SiPMs after their single photo-electron resolution is lost are discu…
The radiation damage in optical materials mostly manifests itself as the loss of optical transmittance. The optical materials recover from radiation damage to some extent when the radiation exposure is stopped. The recovery is at a faster rate in the presence of stimulating light. On the other hand, a systematic study of the dynamics of the recovery as a function of the stimulating light parameters such as its wavelength, intensity and exposure duration and method has not been performed in detail yet. We established an LED recovery station which provides pulsed and continuous light at various …
Cerium-doped Cs$_2$LiYCl$_6$ (CLYC) and Cs$_2$LiLaBr$_x$Cl$_{6-x}$ (CLLBC) are scintillators in the elpasolite family that are attractive options for resource-constrained applications due to their ability to detect both gamma rays and neutrons within a single volume. Space-based detectors are one such application, however, the radiation environment in space can over time damage the crystal structure of the elpasolites, leading to degraded performance. We have exposed 4 samples each of CLYC and CLLBC to 800 MeV protons at the Los Alamos Neutron Science Center. The samples were irradiated with a…
A component which suffers radiation damage usually also becomes radioactive, since the source of activation and radiation damage is the interaction of the material with particles from an accelerator or with reaction products. However, the underlying mechanisms of the two phenomena are different. These mechanisms are described here. Activation and radiation damage can have far-reaching consequences. Components such as targets, collimators, and beam dumps are the first candidates for failure as a result of radiation damage. This means that they have to be replaced or repaired. This takes time, d…
Radiation damage on Silicon Photomultipliers from ionizing and non-ionizing radiation of low-earth orbit operations
本文通过质子与X射线辐照FBK生产的不同尺寸NUV-HD SiPM，并结合在线IV测量与辐照前后功能表征，识别最适合空间应用的耐辐射工艺和版图变体。
Performance and Radiation Damage of the Heavy-Ion Silicon Beam Tracker in the BM@N Experiment
该研究针对BM@N实验的硅束流追踪器，利用¹²⁴Xe束流数据探究其性能与辐射损伤，发现提高偏置电压可恢复电荷收集效率，追踪效率仍接近99%，还重建了束流注量空间分布。
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
We are developing monolithic pixel detectors based on SOI technology for high energy physics, X-ray applications and so on.To employ SOI pixel detector on such radiation environments, we have to solve effects of total ionizing dose (TID) for transistors which are enclosed in oxide layer.The holes which are generated and trapped in the oxide layers after irradiation affect characteristics of near-by transistors due to its positive electric field.Annealing and radiation of ultraviolet are not realistic to remove trapped holes for a fabricated detector due to thermal resistance of components and …
We show that radiation damage to unstained biological specimens is not an intractable problem in electron microscopy. When a structural hypothesis of a specimen is available, quantum mechanical principles allow us to verify the hypothesis with a very low electron dose. Realization of such a concept requires precise control of the electron wave front. Based on a diffractive electron optical implementation, we demonstrate the feasibility of this new method by both experimental and numerical investigations.
CMOS Monolithic Active Pixel Sensors (MAPS) are considered as an emerging technology in the field of charged particle tracking. They will be used in the vertex detectors of experiments like STAR, CBM and ALICE and are considered for the ILC and the tracker of ATLAS. In those applications, the sensors are exposed to sizeable radiation doses. While the tolerance of MAPS to ionizing radiation and fast hadrons is well known, the damage caused by low energy neutrons was not studied so far. Those slow neutrons may initiate nuclear fission of $^{10}$B dopants found in the B-doped silicon active mediu…
Imaging experiments at the European X-ray Free Electron Laser (XFEL) require silicon pixel sensors with extraordinary performance specifications: Doses of up to 1 GGy of 12 keV photons, up to 10^5 12 keV photons per pixel of 200 \mum \times 200 \mum arriving within less than 100 fs, and a time interval between XFEL pulses of 220 ns. To address these challenges, in particular the question of radiation damage, the properties of the SiO_2 layer and of the Si-SiO_2 interface using MOS capacitors manufactured on high resistivity n-type silicon irradiated to X-ray doses between 10 kGy and 1 GGy, hav…
Radiation tolerance test and damage of single-crystal CVD Diamond sensor under high fluence particles
本研究通过实验和模拟评估了单晶CVD金刚石传感器在高通量粒子下的辐射耐受性，揭示了损伤机制并开发了更精确的载流子退化模型。
CMOS Monolithic Active Pixel Sensors (MAPS) were chosen as sensor technology for the vertex detectors of STAR, CBM and the upgraded ALICE-ITS. They also constitute a valuable option for tracking devices at future e+e- colliders. Those applications require a substantial tolerance to both, ionizing and non-ionizing radiation. To allow for a focused optimization of the radiation tolerance, prototypes are tested by irradiating the devices either with purely ionizing radiation (e.g. soft X-rays) or the most pure sources of non-ionizing radiation available (e.g. reactor neutrons). In the second case…
We have exposed seven full length production quality crystals of the electromagnetic calorimeter (ECAL) of the CMS detector to a 20 GeV/c proton beam at the CERN PS accelerator. The exposure was done at fluxes of 10**12 p/cm**2/h and 10**13 p/cm**2/h and integral fluences of 10**12 p/cm**2 and 10**13 p/cm**2 were reached at both rates. The light transmission of the crystals was measured after irradiation and suitable cooling time for induced radioactivity to decrease to a safe level. First results of these measurements are shown. The possible damage mechanisms are discussed and simulations bas…
Hadronic Forward(HF) detector is one of the sub-detectors of the CMS. It plays an important role in the measurement of forward jets and missing energy. HF is situated on both sides of the CMS interaction point, at about $\pm$11 m, covers the very forward angles of CMS, in the pseudorapidity range (3.0 < | $η$ | < 5.0), leaving only clearance for the beam pipes. This calorimeter consists of quartz fibers embedded in the iron absorber. Cherenkov light created by the charged particles is transmitted to PMTs by the fibers. Fibers due to the proton-proton collisions are exposed to high radiation. T…
Response of AC-coupled Low Gain Avalanche Detectors to Ionizing and Non-ionizing Radiation Damage
本研究将带交直流耦合读出的低增益雪崩二极管暴露于相关剂量的电离与非电离辐射下，测定了其受主去除常数、电阻率、漏电流及耗尽电压的损伤变化，为多领域未来实验的探测器选型提供参考。
We present measurements of the reduction of light output by plastic scintillators irradiated in the CMS detector during the 8 TeV run of the Large Hadron Collider and show that they indicate a strong dose rate effect. The damage for a given dose is larger for lower dose rate exposures. The results agree with previous measurements of dose rate effects, but are stronger due to the very low dose rates probed. We show that the scaling with dose rate is consistent with that expected from diffusion effects.
We report on the initial results of an experiment to determine the effects of proton radiation damage on an X-ray hybrid CMOS detector (HCD). The device was irradiated at the Edwards Accelerator Lab at Ohio University with 8 MeV protons, up to a total absorbed dose of 3 krad(Si) (4.5 $\times$ 10$^9$ protons/cm$^2$). The effects of this radiation on read noise, dark current, gain, and energy resolution are then analyzed. This exposure is the first of several which will be used for characterizing detector performance at absorbed dose levels that are relevant for imaging devices operating in a de…
Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of $10^{15}$ 1 MeV ${n}_{eq}/{cm}^2$, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors.…
We report on the effects of ionizing radiation on 65nm CMOS transistors held at approximately -20C during irradiation. The pattern of damage observed after a total dose of 1 Grad is similar to damage reported in room temperature exposures, but we observe less damage than was observed at room temperature.
Avalanche photodiodes (APDs) are a practical option for space-based quantum communications requiring single-photon detection. However, radiation damage to APDs significantly increases their dark count rates and reduces their useful lifetimes in orbit. We show that high-power laser annealing of irradiated APDs of three different models (Excelitas C30902SH, Excelitas SLiK, and Laser Components SAP500S2) heals the radiation damage and substantially restores low dark count rates. Of nine samples, the maximum dark count rate reduction factor varies between 5.3 and 758 when operating at minus 80 deg…
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes …
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model h…
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numerical simulation of silicon detectors at very high fluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present the comparison between simulation results and experimental data for p-type substrate structures in different operating conditions (temperature and biasing voltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement between simulation findings and experimental measurements fosters the applic…
Silicon pixel detectors are at the core of the current ATLAS detector and its planned upgrade. As the detectors in closest proximity to the interaction point, they will be exposed to a significant amount of radiation: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\mathrm{eq}/\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorou…
This paper presents the techniques used to monitor radiation damage in the LHCb Tracker Turicensis during the LHC Runs 1 and 2. Bulk leakage currents in the silicon sensors were monitored continuously, while the full depletion voltages of the sensors were estimated at regular intervals by performing dedicated scans of the charge collection efficiency as a function of the applied bias voltage. Predictions of the expected leakage currents and full depletion voltages are extracted from the simulated radiation profile, the luminosity delivered by the LHC, and the thermal history of the silicon sen…
A lightweight algorithm to model radiation damage effects in Monte Carlo events for High-Luminosity LHC experiments
本文提出一种轻量级算法，用于高亮度LHC实验中快速模拟辐射损伤效应，与全模拟结果在百分之几内一致，且速度与无修正时相当。
Measurements are presented of the reduction of signal output due to radiation damage for plastic scintillator tiles used in the hadron endcap (HE) calorimeter of the CMS detector. The tiles were exposed to particles produced in proton-proton (pp) collisions at the CERN LHC with a center-of-mass energy of 13 TeV, corresponding to a delivered luminosity of 50 fb$^{-1}$. The measurements are based on readout channels of the HE that were instrumented with silicon photomultipliers, and are derived using data from several sources: a laser calibration system, a movable radioactive source, as well as …
A measurement has been made of the radiation damage incurred by the ATLAS Pixel Detector barrel silicon modules from the beginning of operations through the end of 2012. This translates to hadronic fluence received over the full period of operation at energies up to and including 8 TeV. The measurement is based on a per-module measurement of the silicon sensor leakage current. The results are presented as a function of integrated luminosity and compared to predictions by the Hamburg Model. This information can be used to predict limits on the lifetime of the Pixel Detector due to current, for …
Silicon Photomultipliers (SiPMs) are quickly replacing traditional photomultiplier tubes (PMTs) as the readout of choice for gamma-ray scintillation detectors in space. While they offer substantial size, weight and power saving, they have shown to be susceptible to radiation damage. SensL SiPMs with different cell sizes were irradiated with 64 MeV protons and 8 MeV electrons. In general, results show larger cell sizes are more susceptible to radiation damage with the largest 50 um SiPMs showing the greatest increase in current as a function of dose. Current increases were observed for doses as…
Application of sequence learning for predicting radiation damage of the CMS electromagnetic calorimeter
本文应用序列到序列深度学习模型预测CMS电磁量能器钨酸铅晶体的辐射损伤，基于LHC开放数据验证了该方法的有效性。
A look-up table algorithm to model radiation damage effects in Monte Carlo events for HL-LHC experiments
本文提出一种查找表算法，用于在HL-LHC实验的蒙特卡洛事件中快速建模辐射损伤效应，在保持与全模拟结果百分之几一致性的同时，显著提升计算速度。
We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ Φ_{eq}=2.5 \times 10^{15} ~n_{eq}/…
Comparison of Silvaco and Synopsys TCAD Predictions Including the Perugia Radiation Damage Model in Silicon Pixel Detectors for the HL-LHC
研究比较了Silvaco和Synopsys TCAD在包含Perugia辐射损伤模型下的预测，评估辐射对硅像素探测器中电荷收集性能、漏电流和击穿电压的影响，以优化运行条件和跟踪算法的鲁棒性。
The effects of radiation damage in silicon photomultipliers (SiPMs) from gamma rays have been measured and compared with the damage produced by neutrons. Several types of MPPCs from Hamamatsu were exposed to gamma rays and neutrons at the Solid State Gamma Ray Irradiation Facility (SSGRIF) at Brookhaven National Lab and the Institute for Nuclear Research (Atomki) in Debrecen, Hungary. The gamma ray exposures ranged from 1 krad to 1 Mrad and the neutron exposures ranged from 10$^8$ n/cm$^2$ to 10$^{12}$ n/cm$^2$. The main effect of gamma ray damage is an increase in the noise and leakage curren…
Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector
本文研究ATLAS IBL探测器3D像素传感器在LHC运行期间的响应与辐射损伤，通过测量和模拟预测其性能演变，验证了3D技术在强辐射环境中的适用性。
Liquid scintillating phantoms have been proposed as a means to perform real-time 3D dosimetry for proton therapy treatment plan verification. We have studied what effect radiation damage to the scintillator will have upon this application. We have performed measurements of the degradation of the light yield and optical attenuation length of liquid scintillator and water-based liquid scintillator after irradiation by 201 MeV proton beams that deposited doses of approximately 52 Gy, 300 Gy, and 800 Gy in the scintillator. Liquid scintillator and water-based liquid scintillator (composed of $5\%$…
Nuclear recoils in crystal detectors generate radiation damage in the form of crystal defects that can be measured in scientific-grade CCDs as local hot spots of leakage current stimulated by temperature increases in the devices. In this proceeding, we use a neutron source to generate defects in DAMIC-M CCDs, and using increases in leakage current at different temperatures, we demonstrate a procedure for identifying crystal defects in the CCDs of the DAMIC-M experiment. This is the first time that individual defects generated from nuclear recoils have been studied. This technique could be used…
The last decade has increasingly seen the use of silicon photomultipliers (SiPMs) instead of photomultiplier tubes (PMTs). This is due to various advantages of the former on the latter like its smaller size, lower operating voltage, higher detection efficiency, insensitivity to magnetic fields and mechanical robustness to launch vibrations. All these features make SiPMs ideal for use on space based experiments where the detectors require to be compact, lightweight and capable of surviving launch conditions. A downside with the use of this novel type of detector in space conditions is its susce…
Studies of the radiation hardness of lead tungstate crystals produced by the Bogoroditsk Techno-Chemical Plant in Russia and the Shanghai Institute of Ceramics in China have been carried out at IHEP, Protvino. The crystals were irradiated by a 40-GeV pion beam. After full recovery, the same crystals were irradiated using a $^{137}Cs$ $γ$-ray source. The dose rate profiles along the crystal length were observed to be quite similar. We compare the effects of the two types of radiation on the crystals light output.
扫码添加微信好友，提出您的宝贵建议 👇
💡 备注请填写：网站反馈
发表机构由 AI 从论文文本抽取，如发现错误，欢迎反馈修正建议。