p-GaAs/AlGaAs MQW中单极自旋取向引起的循环光电流效应
Circular photogalvanic effect induced by monopolar spin orientation in p-GaAs/AlGaAs MQW
摘要：
在（100）取向的$p$ -GaAs/AlGaAs量子阱中，在远红外辐射的正入射下观察到了圆形光电流效应（CPGE）。结果表明，单极光学自旋自由载流子的取向导致电流，其方向反转后，从左到右的圆偏振辐射的变化。在正常入射的CPGE和线性光电流效应的发生表明所研究的多层异质结构的点对称性降低。CPGE可以用来分别研究电子和空穴的自旋极化以及量子阱的对称性。
英文摘要：
The circular photogalvanic effect (CPGE) has been observed in (100)-oriented $p$-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. CPGE at normal incidence and the occurence of the linear photogalvanic effect indicate a reduced point symmetry of studied multi-layered heterostructures. As proposed, CPGE can be utilized to investigate separately spin polarization of electrons and holes and the symmetry of quantum wells.
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