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arXiv cond-mat/0202002cond-mat.mes-hall
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通过铁磁畴壁的非线性自旋极化输运

Nonlinear spin-polarized transport through a ferromagnetic domain wall

G. Vignale, M. E. Flatte'

摘要:

在铁磁半导体中,分隔两个相反磁化区域的畴壁在适当的条件下表现出类似于p-n二极管的强非线性I-V特性。我们研究这些特性作为壁宽和温度的函数。随着宽度增加或温度降低,多数自旋带之间的直接隧穿降低二极管的效率。这对磁性半导体的零场淬灭电阻和最近提出的自旋晶体管的设计具有重要意义。

英文摘要:

A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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