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arXiv 2607.08023cond-mat.mtrl-sciphysics.app-phquant-ph
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全范德瓦尔斯异质结构中界面手性诱导的无磁场切换及高能效

Interfacial chirality-induced magnetic-field-free switching with high energy efficiency in all-vdW heterostructures

Seoul National University(首尔大学);Pohang University of Science and Technology(浦项科技大学);Kyungpook National University(庆北国立大学);Washington University in St. Louis(圣路易斯华盛顿大学);University of California(加州大学);Oak Ridge National Laboratory(橡树岭国家实验室)
Kai-Xuan Zhang, Suik Cheon, Seungbok Lee, Joonyoung Choi, Jihoon Keum, Hyuncheol Kim, Yeochan An, Woonghee Cho, Suhan Son, Jingyuan Cui, Pyeongjae Park, Younjun… 展开作者

Kai-Xuan Zhang, Suik Cheon, Seungbok Lee, Joonyoung Choi, Jihoon Keum, Hyuncheol Kim, Yeochan An, Woonghee Cho, Suhan Son, Jingyuan Cui, Pyeongjae Park, Younjung Jo, Jun Sung Kim, Hyun-Woo Lee, Je-Geun Park

AI总结:

研究手性材料形成异质结构时界面的独特现象,通过Co1/3TaS2与Fe3GeTe2等组成的异质结构,利用源于界面手性的自旋轨道扭矩实现垂直磁化无磁场切换,有超低电流密度和最小功耗,还实现室温切换,为高效低功耗自旋电子器件开辟新途径。

摘要:

手性是许多科学学科的核心概念,不断激发新物理现象的发现。在凝聚态物理中,结构手性主要在块状材料中探索,而手性材料形成异质结构时,界面会出现独特的手性现象。本文证明由手性Co1/3TaS2和非手性范德瓦尔斯铁磁体Fe3GeTe2组成的全范德瓦尔斯异质结构,表现出源于界面手性的两种不同且非常规的自旋轨道扭矩。这些扭矩能以超低电流密度~10^6 A/cm^2和最小功耗<10^15 W/m^3实现垂直磁化的无磁场切换。此外,用居里温度更高的Fe3GaTe2替换Fe3GeTe2,在Fe3GaTe2/Co1/3TaS2范德瓦尔斯异质结构中实现了室温下的无磁场切换。研究结果确立了界面手性作为自旋电子控制的有力新手段,开辟了探索超越体对称约束的手性诱导现象的新途径,并为基于全范德瓦尔斯异质结构的高效、低功耗自旋电子器件铺平了道路。

英文摘要:

Chirality, a central concept across many scientific disciplines, continues to inspire the discovery of novel physical phenomena. In condensed matter physics, structural chirality - defined by the absence of mirror plane symmetries - has primarily been explored in bulk materials. However, new chiral phenomena can emerge uniquely at the interface, distinct from their bulk counterparts, when a chiral material forms a heterostructure. Here, we demonstrate that all van-der-Waals (vdW) heterostructure composed of the chiral Co1/3TaS2 and the achiral vdW ferromagnet Fe3GeTe2 exhibits two distinct and unconventional spin-orbit torques originating from the interfacial chirality. These torques enable magnetic-field-free switching of perpendicular magnetization with ultralow current density ~ 10^6 A/cm^2 and minimal power dissipation < 10^15 W/m^3. Moreover, by replacing Fe3GeTe2 with a similar vdW ferromagnet, Fe3GaTe2, but of higher Curie temperature, we achieved the magnetic-field-free switching at room temperature in the Fe3GaTe2/Co1/3TaS2 vdW heterostructure. Our findings establish interfacial chirality as a powerful new handle for spintronic control, opening a new pathway to explore chirality-induced phenomena beyond the bulk symmetry constraints - and paving the way toward highly efficient, low-power spintronic devices based on all-vdW heterostructures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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