二维材料中通过设计构建拓扑结构
Engineering Topology by Design in Two-dimensional Materials
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中文总结 AI 辅助
研究二维拓扑绝缘体，初靠强本征自旋轨道耦合材料，范围受限。现范德华异质结构工程拓扑相范式转变，其有多种可调自由度，外部刺激可动态控制拓扑特性，综述其发展关键、挑战及未来方向。
中文摘要 AI 辅助
二维拓扑绝缘体因其受时间反演对称性保护的稳健无耗散边缘态，成为下一代自旋电子技术的基石。二维拓扑绝缘体的最初实现主要集中在具有强本征自旋轨道耦合的材料上，这限制了材料范围。最近，范德华异质结构中工程拓扑相的范式发生转变，其非平凡能带拓扑可源于界面耦合，该框架具有多种可调自由度，外部刺激可实现动态可逆控制。综述了范德华工程二维拓扑量子材料发展的关键里程碑，评估了理论和实验挑战，并概述了未来突破的方向。
英文摘要
Two-dimensional topological insulators (2D TIs) have emerged as a cornerstone of next-generation spintronic technologies due to their robust, dissipationless edge states protected by time-reversal symmetry. Initial realizations of 2D TIs have primarily focused on materials with strong intrinsic spin-orbit coupling capable of driving band inversion, an approach that significantly constrains the accessible materials landscape. More recently, a paradigm shift has occurred toward engineering topological phases in van der Waals (vdW) heterostructures, where nontrivial band topology can arise from interfacial coupling rather than relying solely on intrinsic material properties. This framework provides an exceptionally versatile platform with multiple tunable degrees of freedom, including stacking configuration, twist angle, and chemical functionalization, allowing systematic manipulation of the band topology. Furthermore, external stimuli, such as electric fields, strain, and light-matter coupling, enable dynamic and reversible control of the topological character. The combined use of vdW interface engineering and external modulation allows the realization of 2D TI phases even in otherwise topologically trivial systems, substantially expanding the accessible materials landscape. This Research Update reviews key milestones in the development of vdW-engineered 2D topological quantum materials, critically assesses outstanding theoretical and experimental challenges, and outlines promising directions for future breakthroughs.
