铌和氮化钛薄膜的SC-1刻蚀
SC-1 Etching of Niobium and Titanium Nitride Thin Films
AI总结：
本研究采用标准清洗1号(SC-1)溶液湿法刻蚀铌和氮化钛薄膜，通过时间演化动力学和形貌表征，发现刻蚀与原生氧化物和微结构相关，具有可控速率、安全性和高选择性。
摘要：
干法刻蚀技术在微电子制造中普遍存在，但常常导致难以接受的等离子体诱导损伤。在这项工作中，我们展示了一种使用标准清洗1号(SC-1)溶液湿法刻蚀铌(Nb)和氮化钛(TiN)薄膜的替代方法。我们通过时间演化动力学表征了刻蚀过程，并辅以扫描电子显微镜和原子力显微镜对刻蚀薄膜形貌的评估。结果表明，刻蚀动力学与原生氧化物和薄膜微结构相关。总体而言，可控的刻蚀速率、安全的操作和高材料选择性使其在微电子制造中具有实际应用价值。
英文摘要：
Dry etching techniques, ubiquitous in microelectronics fabrication, often result in challenging levels of undesired collateral plasma-induced damage. In this work, we demonstrate a wet etching alternative for the patterning of niobium (Nb) and titanium nitride (TiN) thin films using the Standard Cleaning 1 (SC-1) solution. We characterize the etching process through its time-evolution dynamics, supported by scanning-electron and atomic force microscopy assessment of the etched film morphology. The results suggest etch dynamics that are linked to native oxides and film microstructure. Overall, the manageable etch rates, the safe operation and the high material selectivity are attractive for practical use in microelectronics fabrication.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
