低电流高耐久性钛铌氧化物忆阻器的空间均匀电阻切换
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
摘要：
我们分析了微米级钛铌氧化物原型忆阻器，其具有低写入功率（<3 μW）和能量（<200 fJ/bit/μm2）、低读取功率（~nW）和高耐久性（>数百万次循环）。为了了解它们的物理化学操作机制，我们使用超灵敏的时间复用技术进行了同步加速器X射线透射纳米级光谱显微镜。我们只观察到空间均匀的材料变化在细胞的操作过程中，形成鲜明对比，频繁检测到的形成一个局部的导电沟道的过渡金属氧化物忆阻器。我们还将分配的光谱特征的响应与非易失性存储（电阻变化）和信息写入（电压和焦耳加热的应用）明显相关。这些结果为高性能忆阻器提供了重要的见解，有助于器件设计，缩放和预测电路建模，所有这些对于成功忆阻器应用的广泛部署至关重要。
英文摘要：
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in-operando synchrotron x-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
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