非对称脉冲用于钛/锰记忆电阻器的可靠操作
Asymmetric pulsing for reliable operation of titanium/manganite memristors
摘要：
我们提出了一个脉冲协议，显着增加的耐久性的钛锰氧化物界面用作二进制存储单元。该协议的核心是一种算法，该算法搜索设置和复位脉冲的正确值，消除电阻值的漂移。一组实验显示了超过$10^{5}$开关周期的无漂移操作，以及通过改变协议指示的脉冲幅度的有害影响。我们再现的结果与数值模型，它提供的信息在开关周期的氧空位的动态。
英文摘要：
We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
