Mem-Con忆阻理论的丝状扩展及其在钛白溶胶-凝胶忆阻器中的应用
Filamentary Extension of the Mem-Con theory of Memristance and its Application to Titanium Dioxide Sol-Gel Memristors
摘要：
钛白溶胶-凝胶忆阻器具有两种不同的操作模式，据信这取决于是否存在体忆阻（bulk memristance），即贯穿整个体积的忆阻，或者是否存在非体忆阻，即由导电细丝的连接引起的忆阻。忆阻的mem-con理论是基于氧空位的漂移而不是导电电子的漂移，并且先前已用于描述几种器件中的体忆阻。在这里，mem-con理论扩展到模型的低电阻钛白的小细丝引起的忆阻，它比较有利的实验结果，在溶胶-凝胶器件的介电忆阻。
英文摘要：
Titanium dioxide sol-gel memristors have two different modes of operation, believed to be dependent on whether there is bulk memristance, i.e. memristance throughout the whole volume or filamentary memristance, i.e. memristance caused by the connection of conducting filaments. The mem-con theory of memristance is based on the drift of oxygen vacancies rather than that of conducting electrons and has been previously used to describe bulk memristance in several devices. Here, the mem-con theory is extended to model memristance caused by small filaments of low resistance titanium dioxide and it compares favorably to experimental results for filamentary memristance in sol-gel devices.
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